Abstract: Example stylus holders for an electronic device are disclosed herein. In an example, the stylus holder is coupled to an outer housing of the electronic device. In addition, the stylus holder includes a sleeve that is to transition between: an extended position, in which the sleeve is projected out of the aperture of the outer housing; and a retracted position, in which the sleeve is retracted into the aperture of the outer housing from the extended position. Further, the stylus holder includes a biasing member disposed within the outer housing and coupled to the sleeve. The biasing member is to bias the sleeve toward the retracted position when the sleeve is in the extended position.

Abstract: In one example, a keyboard device may include a base plate, a pivoting support fixedly disposed on the base plate and having a recess portion, a key cap support having a shaft portion rotatably received in the recess portion, a rolling element disposed between the shaft portion and the pivoting support, and a key cap assembled to the key cap support.

Abstract: Example stylus holders for an electronic device are disclosed herein. In an example, the stylus holder is coupled to an outer housing of the electronic device. In addition, the stylus holder includes a sleeve that is to transition between: an extended position, in which the sleeve is projected out of the aperture of the outer housing; and a retracted position, in which the sleeve is retracted into the aperture of the outer housing from the extended position. Further, the stylus holder includes a biasing member disposed within the outer housing and coupled to the sleeve. The biasing member is to bias the sleeve toward the retracted position when the sleeve is in the extended position.

Abstract: In one example, a keyboard device may include a base plate, a pivoting support fixedly disposed on the base plate and having a recess portion, a key cap support having a shaft portion rotatably received in the recess portion, a rolling element disposed between the shaft portion and the pivoting support, and a key cap assembled to the key cap support.

Abstract: A wireless charger may include a transmitting coil to induce charging of a target device, a printed circuit board, a charger casing to include the transmitting coil and the printed circuit board, and a thermally conductive coating to dissipate heat. The transmitting coil may include at least one electrically conducting coil. The thermally conductive coating may be in direct contact with at least one of the transmitting coil, the printed circuit board, and the charger casing.

Abstract: Examples of a hinge for foldable components are described herein. In an example, the hinge can include a plurality of bracing elements, a bracing element from the plurality of bracing elements can be operably coupled to an adjacent bracing element from the plurality of bracing elements, to fold the plurality of bracing elements into an arcuate shape. Each bracing element can be supported and locked against the adjacent bracing element in the arcuate shape. The hinge can further include an end coupler at each longitudinal end of the hinge to couple the hinge to a flexible element.

Abstract: Examples of a hinge for foldable components are described herein. In an example, the hinge can include a plurality of bracing elements, a bracing element from the plurality of bracing elements can be operably coupled to an adjacent bracing element from the plurality of bracing elements, to fold the plurality of bracing elements into an arcuate shape. Each bracing element can be supported and locked against the adjacent bracing element in the arcuate shape. The hinge can further include an end coupler at each longitudinal end of the hinge to couple the hinge to a flexible element.

Abstract: A wireless charger may include a transmitting coil to induce charging of a target device, a printed circuit board, a charger casing to include the transmitting coil and the printed circuit board, and a thermally conductive coating to dissipate heat. The transmitting coil may include at least one electrically conducting coil. The thermally conductive coating may be in direct contact with at least one of the transmitting coil, the printed circuit board, and the charger casing.

Abstract: A coplanar type photovoltaic cell and a method for fabricating the same are provided. The coplanar type cell includes: a semiconductor substrate having a front surface and a back surface; and an anode stack and a cathode stack isolated from each other and formed on the back surface of the semiconductor substrate.

Abstract: A miniaturized lens assembly includes an image-capturing unit, a lens unit, and a binding layer. The image-capturing unit includes an image-capturing member. The lens unit includes an image-projecting portion for projecting an image along an optical axis to the image-capturing member. The binding layer extends around the optical axis, and binds the image-capturing unit to the lens unit. The binding layer includes a photosensitive polymeric material and spaces apart the lens unit and the image-capturing unit. A method for making the miniaturized lens assembly is also disclosed.

Abstract: A method for making high precision hard film coating on a mold core comprises the following steps of: (a) providing a mold jig (200, 300) and a mold core (208, 308); (b) defining a through hole (206, 364) of a first inner diameter in the mold jig; (c) forming a rim (254, 354) of a second inner diameter on the inner side of the through hole, the second inner diameter being smaller than the first inner diameter; (d) configuring the mold core into a mold core including a body (212, 312) of a first external diameter and a top portion (250, 350) of a second external diameter, the second external diameter being smaller than the first external diameter to define a shoulder (252, 352) between the body and the top portion, the first external diameter being substantially equal to the first inner diameter and larger than the second inner diameter, the second external diameter being substantially equal to or smaller than the second inner diameter; and (e) coreing the mold core into the through hole of the mold jig from t

Abstract: A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure which includes a bondable metal pad, a top interconnection metal layer, a stress-buffering dielectric, and at least a first via plug between the bondable metal pad and the top interconnection metal layer. The semiconductor chip also includes at least an interconnection metal layer, at least a second via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor substrate.

Abstract: A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.

Abstract: A pre-process before cutting a wafer is described. The wafer includes a plurality of scribe lines and a plurality of dies defined by the scribe lines, and a material layer covers the wafer. A pre-processing step is performed to remove the material layer on the scribe lines close to the corner regions of the dies. Removing the material layer at the corner regions before cutting the wafer is able to preserve the integrity of the corner regions of the cut dies.

Abstract: A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.

Abstract: An optical article includes a glass sheet having a top surface, a bottom surface, an array of optical elements formed between the top and bottom surfaces and arranged in rows that intersect each other along two intersecting cutting directions of the glass sheet, and at least two aligning marks formed on one of the top and bottom surfaces and spaced apart from each other in one of the cutting directions. A molding assembly for making the optical article is also disclosed.

Abstract: The present invention relates to a method for manufacturing a wafer level chip scale package structure including the following steps. After providing a glass substrate and a wafer comprising a plurality of chips, the active surface of the wafer is connected to the top surface of the glass substrate. The wafer is connected with the glass substrate through either bumps or pads thereon. After drilling the glass substrate to form a plurality of through holes, a plating process is performed to form a plurality of via plugs in the through holes. Afterwards, a singulation step is performed and a plurality of chip scale package structures is obtained.

Abstract: A miniaturized lens assembly includes an image-capturing unit, a lens unit, and a binding layer. The image-capturing unit includes an image-capturing member. The lens unit includes an image-projecting portion for projecting an image along an optical axis to the image-capturing member. The binding layer extends around the optical axis, and binds the image-capturing unit to the lens unit. The binding layer includes a photosensitive polymeric material and spaces apart the lens unit and the image-capturing unit. A method for making the miniaturized lens assembly is also disclosed.

Abstract: An optical lens molding apparatus includes a cylindrical mold, a first mold core, a second mold core and a correctional ring. The first and the second mold core have a columnar shape and are disposed inside the cylindrical mold to form a cavity. Furthermore, the first and the second mold core have a planar portion at the end surface facing the cavity. The correctional ring is disposed on the planar portion of the second mold core. The correction ring corrects any face tilting of the molded optical lens due to the tilting of the first mold core. The present invention also provides a precision molding apparatus for forming precision parts.

Abstract: A reinforced bonding pad structure includes a bondable metal layer defined on a stress-buffering dielectric layer, and an intermediate metal layer damascened in a first inter-metal dielectric (IMD) layer disposed under the stress-buffering dielectric layer. The intermediate metal layer is situated directly under the bondable metal layer and is electrically connected to the bondable metal layer with a plurality of via plugs integrated with the bondable metal layer. A metal frame is damascened in a second IMD layer under the first IMD layer. The metal frame is situated directly under the intermediate metal layer for counteracting mechanical stress exerted on the bondable metal layer during bonding, when the thickness of said stress-buffering dielectric layer is greater than 2000 angstroms, the damascened metal frame may be omitted. An active circuit portion including active circuit components of the integrated circuit is situated directly under the metal frame.