Abstract: A semiconductor processing station comprises a platform and a load port, wherein the platform includes an intake/outtake port and a plurality of processing modules. The load port includes a load chamber, a movable cover and a carrier transfer module. The load chamber communicates with the intake/outtake port and has a load opening at its top end for receiving a transport carrier within the load chamber. The movable cover is disposed at the load opening and is configured to seal the load opening. The carrier transfer module is configured to transfer the transport carrier to the intake/outtake port. A semiconductor process and a method of operating a semiconductor processing station are also provided.

Abstract: Methods for manufacturing semiconductor devices are disclosed. A photoresist layer is formed over a substrate. A cryogenic process is performed on the photoresist layer. After the cryogenic process, a cleaning process is performed on the photoresist layer to remove the photoresist layer.

Abstract: Methods for manufacturing semiconductor devices are disclosed. A photoresist layer is formed over a substrate. A cryogenic process is performed on the photoresist layer. After the cryogenic process, a cleaning process is performed on the photoresist layer to remove the photoresist layer.

Abstract: A method of evaluating characteristics of a work piece includes forming a photosensitive layer on the work piece. Then an ion implantation is performed on the work piece. The work piece is radiated, and an optical intensity of the photosensitive material on the work piece is calculated. The ion implantation pattern is evaluated according to the optical intensity. A chemical structure of the photosensitive material is changed upon the ion implantation. The work piece is recovered by reversing the chemical structure of the photosensitive material or removing the ion interrupted photosensitive material by chemicals.

Abstract: A system for cleaning a container such as semiconductor wafer carrier includes a housing, a cleaning unit in the housing, an analyzing unit within the housing, and a vacuum unit within the housing. The cleaning unit comprises a cleaning chamber, and is configured to spray a cleaning medium into the container in the cleaning chamber and dry the container. The analyzing unit is configured to analyze air inside the container coming out of the cleaning chamber, and provide a testing result for each ingredient of possible airborne molecular contamination (AMC) and humidity. The vacuum unit comprises a vacuum chamber configured to apply vacuum onto a container when the testing result for an ingredient is higher than a respective threshold.

Abstract: A cleaning method using vaporized solvent is provided. A solvent-containing vapor is generated, wherein the solvent-containing vapor comprises a solvent. The solvent-containing vapor is conducted to a substrate having debris or contaminants to clean the substrate, wherein the solvent-containing vapor condenses to form a liquid on a surface of the substrate. The liquid phase of the solvent-containing vapor is changed to a solid phase. The solid phase of the solvent-containing vapor is changed back to a liquid phase. The substrate is spun dried to remove the solvent-containing vapor in liquid phase and any debris or contaminants.

Abstract: One or more apparatuses for adjusting at least one of an oxygen content or a water content in a pod and methods of their use are provided, where one or more semiconductor wafer are selectively stored within a storage chamber of the pod. The apparatus comprises the pod and a pipeline. The pod comprises the storage chamber and a port. The port comprises a receptacle having a first opening and a constraining ring proximate the first opening. The pipeline comprises a pipe, a diffuser attached to a first end of the pipe and a controller attached to a second end of the pipe.

Abstract: A method of trimming a fin structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure cladding the fin structure, in which the epitaxy structure has a first lattice plane with Miller index (111), a second lattice plane with Miller index (100) and a third lattice plane with Miller index (110); and (iii) removing the epitaxy structure and a portion of the fin structure to obtain a trimmed fin structure.

Abstract: A method of trimming a fin structure includes the following operations: (i) forming a fin structure on a substrate; (ii) epitaxially growing an epitaxy structure cladding the fin structure, in which the epitaxy structure has a first lattice plane with Miller index (111), a second lattice plane with Miller index (100) and a third lattice plane with Miller index (110); and (iii) removing the epitaxy structure and a portion of the fin structure to obtain a trimmed fin structure.

Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

Abstract: Embodiments of mechanisms for controlling a gas flow in an interface module are provided. A method for controlling a gas flow in an enclosure includes providing the enclosure which is capable of containing a substrate. The method also includes providing a gas into the enclosure. The method further includes cleaning the gas. In addition, the method includes actuating the gas to generate the gas flow, and the gas flow passes through the substrate when the substrate is located in the enclosure.

Abstract: An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

Abstract: Embodiments of mechanisms for controlling a gas flow in an interface module are provided. A method for controlling a gas flow in an enclosure includes providing the enclosure which is capable of containing a substrate. The method also includes providing a gas into the enclosure. The method further includes cleaning the gas. In addition, the method includes actuating the gas to generate the gas flow, and the gas flow passes through the substrate when the substrate is located in the enclosure.

Abstract: One or more apparatuses for adjusting at least one of an oxygen content or a water content in a pod and methods of their use are provided, where one or more semiconductor wafer are selectively stored within a storage chamber of the pod. The apparatus comprises the pod and a pipeline. The pod comprises the storage chamber and a port. The port comprises a receptacle having a first opening and a constraining ring proximate the first opening. The pipeline comprises a pipe, a diffuser attached to a first end of the pipe and a controller attached to a second end of the pipe.

Abstract: A cleaning method using vaporized solvent is provided. A solvent-containing vapor is generated, wherein the solvent-containing vapor comprises a solvent. The solvent-containing vapor is conducted to a substrate having debris or contaminants to clean the substrate, wherein the solvent-containing vapor condenses to form a liquid on a surface of the substrate. The liquid phase of the solvent-containing vapor is changed to a solid phase. The solid phase of the solvent-containing vapor is changed back to a liquid phase. The substrate is spun dried to remove the solvent-containing vapor in liquid phase and any debris or contaminants.

Abstract: A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones.

Abstract: A system for cleaning a container such as semiconductor wafer carrier includes a housing, a cleaning unit in the housing, an analyzing unit within the housing, and a vacuum unit within the housing. The cleaning unit comprises a cleaning chamber, and is configured to spray a cleaning medium into the container in the cleaning chamber and dry the container. The analyzing unit is configured to analyze air inside the container coming out of the cleaning chamber, and provide a testing result for each ingredient of possible airborne molecular contamination (AMC) and humidity. The vacuum unit comprises a vacuum chamber configured to apply vacuum onto a container when the testing result for an ingredient is higher than a respective threshold.

Abstract: In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.

Abstract: The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.