Abstract: A solid-state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate and generates signal charge in correspondence with a light amount of incident light; and a transparent electrode that is formed in an upper portion of the substrate and includes a first area formed from a nano carbon material and a second area that is brought into contact with the first area and has light transmittance higher than that of the first area.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: There is provided an optical modulator capable of electrically controlling intensity of transmitted light in a desired wavelength range at a high speed and reducing the size of a device containing the optical modulator. The optical modulator includes first electrode; a second electrode; and a dielectric layer provided between the first and second electrodes. At least one of the first electrode and the second electrode comprises at least one layer of graphene. There are also provided an imaging device and a display apparatus each containing the optical modulator.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A solid-state imaging device includes: a semiconductor substrate including a light receiving surface which is divided according to pixels arranged in a matrix shape and is formed with a photoelectric converting section; an electrochromic film which is formed on the semiconductor substrate on a light incident path corresponding to the photoelectric converting section, in a portion of pixels selected from the pixels, and has light transmittance changing from a first transmittance to a second transmittance according to voltage applied thereto; a lower electrode which is formed below the electrochromic film; and an upper electrode which is formed above the electrochromic film.

Abstract: A pattern designing method, including the steps of carrying out transfer simulation calculation and step simulation calculation by using physical layout data produced from circuit design data, and comparing a result of the transfer simulation calculation and the step simulation calculation with a preset standard; and carrying out calculation for electrical characteristics by using parameters obtained from the physical layout when as a result of the comparison, the preset standard is fulfilled, and carrying out calculation for the electrical characteristics by reflecting the result of the transfer simulation calculation and the step simulation calculation in the parameters when as the result of the comparison, the preset standard is not fulfilled, thereby extracting the parameters.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.

Abstract: A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.

Abstract: A solid-state image capturing device including: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: There are provided a transparent conductive film, as well as a heater, a touch panel, a solar battery, an organic EL device, a liquid crystal device, and an electronic paper that are provided with the transparent conductive film, the transparent conductive film being capable of easing a decline in optical transmittance when graphene is laminated, and of achieving optical transmittance higher than an upper limit of optical transmittance of a single layer of graphene. The transparent conductive film includes a single-layered conductive graphene sheet. The single-layered conductive graphene sheet includes a first region and a second region, the first region being configured of graphene, and the second region being surrounded by the first region and having optical transmittance that is higher than optical transmittance of the first region.

Abstract: Disclosed herein is a solid-state imaging element including: a plurality of pixels including a photoelectric conversion section; and a nano-carbon laminated film disposed on a side of a light receiving surface of the photoelectric conversion section and formed with a plurality of nano-carbon layers, transmittance of light and a wavelength region of transmissible light changing in the nano-carbon laminated film according to a voltage applied to the nano-carbon laminated film.

Abstract: A solid-state image capturing device includes: a semiconductor substrate having a photosensitive surface including a matrix of pixels as respective photoelectric converters; and a photochromic film disposed in a light path through which light is applied to each of the photoelectric converters, the photochromic film being made of a photochromic material having a light transmittance variable depending on the intensity of applied light in a predetermined wavelength range; wherein the light transmittance has a half-value period shorter than one frame during which pixel signals generated by the pixels are read from all the pixels.

Abstract: A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.

Abstract: A method for manufacturing a semiconductor device includes the steps of reading physical layout data of a circuit to be manufactured and performing calculation to modify a pattern width in the physical layout data by a predetermined amount; reading a physical layout and analyzing a pattern that is predicted to remain as a step difference of a predetermined amount or more in a case where a planarization process is performed on a planarizing film on a pattern by a quantitative calculation by using at least one of a density of patterns, a pattern width, and a peripheral length of a range of interest and a range in the vicinity of the range of interest; and reading data of the pattern that is predicted to remain as a step difference, and making a correction to a layout in which a step difference of a predetermined amount or more does not remain.

Abstract: A method of manufacturing a semiconductor device, including the steps of: acquiring information on a graphic composing a physical layout of a semiconductor integrated circuit; carrying out calculation for a transferred image in the physical layout; carrying out calculation for a signal delay based on the physical layout, and obtaining a wiring not meeting a specification having the signal delay previously set therein; and setting a portion into which a repeater is to be inserted based on at least one result of results obtained from the information on the graphic and calculation for the transferred image, respectively, with respect to the wiring not meeting the specification.

Abstract: A solid-state imaging device includes: a substrate; a photoelectric conversion unit that is formed on the substrate and generates signal charge in correspondence with a light amount of incident light; and a transparent electrode that is formed in an upper portion of the substrate and includes a first area formed from a nano carbon material and a second area that is brought into contact with the first area and has light transmittance higher than that of the first area.

Abstract: The present of the invention provides a method of manufacturing a semiconductor device, including the steps of: acquiring information on a graphic composing a physical layout of a semiconductor integrated circuit; carrying out calculation for a transferred image in the physical layout; carrying out calculation for a signal delay based on the physical layout, and obtaining a wiring not meeting a specification having the signal delay previously set therein; and setting a portion into which a repeater is to be inserted based on at least one result of results obtained from the information on the graphic and calculation for the transferred image, respectively, with respect to the wiring not meeting the specification.

Abstract: A pattern verification method comprising preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges, the positional displacement being displacement between first point and the evaluation point, computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.

Abstract: A method of manufacturing a semiconductor device, including the steps of: acquiring information on a graphic composing a physical layout of a semiconductor integrated circuit; carrying out calculation for a transferred image in the physical layout; carrying out calculation for a signal delay based on the physical layout, and obtaining a wiring not meeting a specification having the signal delay previously set therein; and setting a portion into which a repeater is to be inserted based on at least one result of results obtained from the information on the graphic and calculation for the transferred image, respectively, with respect to the wiring not meeting the specification.