Abstract: A focus monitor method comprising preparing a mask comprising a first and second focus monitor patterns and an exposure monitor pattern, the focus monitor patterns being used to form first and second focus monitor marks on a wafer, and the exposure monitor pattern being used to form exposure meters on the wafer, obtaining a exposure dependency of a relationship between a dimensions of the focus monitor marks and the defocus amount, forming the focus monitor marks and exposure monitor mark on the wafer, measuring a dimension of the exposure monitor mark to obtain an effective exposure, selecting a relationship between the dimensions of the focus monitor marks and the defocus amount corresponding to the effective exposure, measuring a dimensions of the first and second focus monitor marks, and obtaining a defocus amount in accordance with the measured dimensions of the focus monitor marks and the selected relationship.

Abstract: Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

Abstract: An exposure method is disclosed, which comprises exposing a light on a photomask having a mask pattern, in an exposing device, receiving in the exposing device the light which passed through the photomask to observe an optical image of the mask pattern based on the received light, deciding an optimum exposure condition based on the optical image of the mask pattern to form a predetermined resist pattern, and exposing a light on a photoresist film formed on a wafer via the photomask based on the optimum exposure condition.

Abstract: A pattern is formed on a resist film by applying the coating f a resist film, first heat treatment, first cooling treatment, the exposure treatment, second heat treatment, second cooling treatment, and development. After the exposure treatment, at least one of the effective exposure and the focus position in the exposure treatment applied to the resist film is obtained. Then, at least one of the difference between the optimum exposure in performing the exposure by using the mask and a set value and the difference between a optimum focus position and the a value is calculated from at least one of the effective exposure obtained and the focus position obtained. Further, at least one of the exposure condition and the process condition after the exposure is calculated in accordance with the calculated difference.

Abstract: A photomask has a device pattern, which has an opening portion and a mask portion, and either a focus monitor pattern or an exposure dose monitor pattern, which has an opening portion and a mask portion and which has the same plane pattern shape as at least a partial region of a device pattern. The phase difference in transmitted exposure light between the opening portion and the mask portion of the focus monitor pattern is different from that between the opening portion and the mask portion of the device pattern. The opening portion of the exposure dose monitor pattern has a different exposure dose transmittance from that of the opening portion of the device pattern.

Abstract: A pattern is formed on a resist film by applying the coating f a resist film, first heat treatment, first cooling treatment, the exposure treatment, second heat treatment, second cooling treatment, and development. After the exposure treatment, at least one of the effective exposure and the focus position in the exposure treatment applied to the resist film is obtained. Then, at least one of the difference between the optimum exposure in performing the exposure by using the mask and a set value and the difference between a optimum focus position and the a value is calculated from at least one of the effective exposure obtained and the focus position obtained. Further, at least one of the exposure condition and the process condition after the exposure is calculated in accordance with the calculated difference.

Abstract: There is disclosed a focus-monitoring mask which is adapted to be employed on an occasion of transferring a pattern on a wafer by way of photolithography, the mask comprising a first pattern region having at least one first monitor pattern which is constituted by a first opening surrounded by a first film or constituted by the first film surrounded by the first opening, and a second pattern region having at least one second monitor pattern which is constituted by a second opening surrounded by a second film or constituted by the second film surrounded by the second opening, and is capable of giving a predetermined phase difference to an exposure light passing through the second film relative to an exposure light passing through the second opening, wherein the first and second monitor patterns have a configuration in which both ends thereof are tapered from a central portion thereof.

Abstract: An exposure method is disclosed, which comprises exposing a light on a photomask having a mask pattern, in an exposing device, receiving in the exposing device the light which passed through the photomask to observe an optical image of the mask pattern based on the received light, deciding an optimum exposure condition based on the optical image of the mask pattern to form a predetermined resist pattern, and exposing a light on a photoresist film formed on a wafer via the photomask based on the optimum exposure condition.