Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.

Abstract: Embodiments are generally directed to integrated passive devices on chip. An embodiment of a device includes a semiconductor die; a semiconductor die package, a first side of the package being coupled with the semiconductor die; and one or more separate dies to provide passive components for operation of the semiconductor die, wherein the passive components for operation of the semiconductor die includes inductors.

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract: In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor.

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract: Magnetic microinductors formed on semiconductor packages are provided. The magnetic microinductors are formed as one or more layers of coplanar magnetic material on a package substrate. Conducting vias extend perpendicularly through the plane of the magnetic film. The magnetic film is a layer of isotropic magnetic material or a plurality of layers of anisotropic magnetic material having differing hard axes of magnetization.

Abstract: A method apparatus and material are described for radio frequency passives and antennas. In one example, an electronic component has a synthesized magnetic nanocomposite material with aligned magnetic domains, a conductor embedded within the nanocomposite material, and contact pads extending through the nanocomposite material to connect to the conductor.

Abstract: In one embodiment, an energy storage device (e.g., capacitor) may include a porous silicon layer formed within a substrate. The porous silicon layer includes pores with a mean pore diameter less than approximately 100 nanometers. A first conductive layer is formed on the porous silicon layer and a first dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the first dielectric layer to form the capacitor.

Abstract: An apparatus includes a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits. Such capacitor may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.

Abstract: A low-resistance inductor is made from a plurality of first inter-abutting insulated electrode coil sub-segments that is coupled to a plurality of second intra-abutting insulated electrode coil sub-segments that are contiguous to the plurality of first intra-abutting coil sub-segments. The first plurality and the second plurality form an helical inductor unit cell. A process of forming the low-resistance inductor includes heat curing. A system includes a low-resistance inductor and a mounting substrate.

Abstract: Magnetic microinductors formed on semiconductor packages are provided. The magnetic microinductors are formed as one or more layers of coplanar magnetic material on a package substrate. Conducting vias extend perpendicularly through the plane of the magnetic film. The magnetic film is a layer of isotropic magnetic material or a plurality of layers of anisotropic magnetic material having differing hard axes of magnetization.

Abstract: An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.

Abstract: A low-inductance capacitor exhibits a first characteristic inductance during use in a first capacitor subsection and a second characteristic inductance during use in a second capacitor subsection, and the first and second characteristic inductances act to neutralize each other. A process of forming the low-inductance capacitor includes heat curing. A package includes a low-inductance capacitor and a mounting substrate.

Abstract: An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.

Abstract: An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted.

Abstract: A parallel-plate capacitor structure includes a capacitor electrode including a first resistance and an electrode tab appended to the capacitor electrode and including a second resistance. The second equivalent series resistance is greater than the first equivalent series resistance. A process of assembling a parallel-plate capacitor package is also disclosed. A computing system is also disclosed that includes the parallel-plate capacitor package.

Abstract: A capacitor may be formed of carbon nanotubes. Carbon nanotubes, grown on substrates, may be formed in a desired pattern. The pattern may be defined by placing catalyst in appropriate locations for carbon nanotube growth from a substrate. Then, intermeshing arrays of carbon nanotubes may be formed by juxtaposing the carbon nanotubes formed on opposed substrates. In some embodiments, the carbon nanotubes may be covered by a dielectric which may be adhered by functionalizing the carbon nanotubes.

Abstract: A capacitor may be formed of carbon nanotubes. Carbon nanotubes, grown on substrates, may be formed in a desired pattern. The pattern may be defined by placing catalyst in appropriate locations for carbon nanotube growth from a substrate. Then, intermeshing arrays of carbon nanotubes may be formed by juxtaposing the carbon nanotubes formed on opposed substrates. In some embodiments, the carbon nanotubes may be covered by a dielectric which may be adhered by functionalizing the carbon nanotubes.

Abstract: A low-resistance inductor is made from a plurality of first inter-abutting insulated electrode coil sub-segments that is coupled to a plurality of second intra-abutting insulated electrode coil sub-segments that are contiguous to the plurality of first intra-abutting coil sub-segments. The first plurality and the second plurality form an helical inductor unit cell. A process of forming the low-resistance inductor includes heat curing. A system includes a low-resistance inductor and a mounting substrate.