Abstract: A keyboard key device includes a keycap and a substrate unit. The substrate unit includes a light-emitting component, a light guide plate, and a light transmission plate. The light guide plate has first and second end surfaces, and at least one light-condensing hole. The first end surface is formed with an uneven microstructure for diffuse reflection of light rays. The light transmission plate has first and second side surfaces, and an outer reflective layer coated on the second side surface. A portion of light rays emitted from the light-emitting component and into the light transmission plate pass through the outer reflective layer, and the remainder of the light rays are reflected by the outer reflective layer.

Abstract: A method of manufacturing a display device is disclosed. A light emitting unit is provided. The light emitting unit has a chip and at least one bonding pin. The light emitting unit is mounted on the substrate through the at least one bonding pin, and an adhesive material is applied to a space between the chip and the substrate.

Abstract: A method for manufacturing an electronic device is provided. The method for manufacturing the electronic device includes: providing a substrate with elements disposed thereon and transferring a portion of the elements from the substrate to a driving substrate, wherein transferring the portion of the elements from the substrate to the driving substrate includes: transferring the portion of the elements from the substrate to the driving substrate, which comprises illuminating regions of the substrate overlapped with the portion of the elements by an energy beam, wherein when the substrate is illuminated by the energy beam, the substrate and the driving substrate are separated by a gap.

Abstract: Provided is a use of a compound represented by Formula (I) or a nitrogen oxide, solvate, metabolite, pharmaceutically acceptable salt, or prodrug thereof in the preparation of medicament.

Abstract: An electronic device is provided in this disclosure. In some embodiments, the electronic device includes a first substrate and a second substrate adjacent to the first substrate. In some embodiments, the electronic device includes a plurality of organic light emitting diodes, a filter layer, and a third substrate. At least a part of the plurality of organic light emitting diodes are disposed on the first substrate. The filter layer is disposed at least on the second substrate. The third substrate is disposed corresponding to the first substrate and the second substrate. The plurality of organic light emitting diodes and the filter layer are disposed under the third substrate.

Abstract: The present disclosure provides a method for preparing a semiconductor device with a copper-manganese liner. The method includes forming an opening structure in a first dielectric layer, wherein the opening structure has a first portion, a second portion and a third portion disposed between and physically connecting the first portion and the second portion; forming a lining material lining the first portion and the second portion of the opening structure and completely filling the third portion of the opening structure, wherein the lining material includes copper-manganese (CuMn); filling the first portion and the second portion of the opening structure with a conductive material after the lining material is formed; and performing a planarization process on the lining material and the conductive material.

Abstract: The present disclosure provides a semiconductor device with a fuse structure and an anti-fuse structure and a method for forming the semiconductor device. The semiconductor device includes a first dielectric layer disposed over a semiconductor substrate, and a first electrode disposed over the first dielectric layer. The semiconductor device also includes a fuse link disposed over the first electrode, and a second electrode disposed over the fuse link. The semiconductor device further includes a third electrode disposed adjacent to the first electrode, and a second dielectric layer separating the first electrode from the first dielectric layer and the third electrode. The first electrode, the fuse link, and the second electrode form a fuse structure, and the first electrode, the third electrode, and a portion of the second dielectric layer between the first electrode and the third electrode form an anti-fuse structure.

Abstract: The present invention is directed to DA×CD3 Binding Molecules comprising a vCD3-Binding Domain, which comprises a CDRHI Domain, a CDRH2 Domain, a CDRH3 Domain, a CDRL I Domain, a CDRL2 Domain, and a CDRL3 Domain, at least one of which differs in amino acid sequence from the amino acid sequence of the corresponding CDR of a rCD3-Binding Domain, wherein the DA×CD3 Binding Molecule comprising such vCD3-Binding Domain exhibits an altered affinity for CD3, relative to a DA×CD3 Binding Molecule comprising such rCD3-Binding Domain. The invention particularly concerns to such DA×CD3 Binding Molecules comprising a vCD3-Binding Domain which exhibit reduced affinity for CD3 and are capable of mediating redirected killing of target cells expressing a DA and exhibit lower levels of cytokine release relative to a DA×CD3 Binding Molecule comprising a rCD3-Binding Domain.

Abstract: An electronic device may include wireless circuitry with a baseband processor, a digital transmitter, a digital-to-analog-converter (DAC), and an antenna. The baseband processor may produce baseband signals. The digital transmitter may generate self-interference-compensated signals based on the baseband signals. The DAC may generate radio-frequency signals for transmission by the antenna based on the self-interference-compensated signals and square-wave local oscillator waveforms. The digital transmitter may include a self-interference canceller that generates the self-interference-compensated signals. The self-interference-compensated signals may mitigate the creation of self-interferer repetition replicas that land on the carrier frequency of the radio-frequency signals. This may allow the radio-frequency signals to be free from error vector magnitude degradation and spectral regrowth that would otherwise be produced due to self-interference in the radio-frequency signals output by the DAC.

Abstract: An optical package structure and a method for manufacturing an optical package structure are provided. The optical package structure includes a sensor, an optical component and a fixing element. The optical component directly contacts the sensor. An interfacial area is defined by a contacting region of the optical component and the sensor. The fixing element is disposed outside of the interfacial area for bonding the optical component and the sensor.

Abstract: The present application provides a programmable memory device. The programmable memory device includes: an access transistor, comprising an active region formed in a substrate and a gate structure formed on the substrate, wherein the active region has a linear top view shape, the gate structure has a first portion and a second portion, the first portion is intersected with a section of the active region away from end portions of the active region, and the second portion is laterally spaced apart from the active region; and a capacitor, using a portion of the active region as a terminal, and further comprising an electrode and a dielectric layer, wherein the electrode is disposed on the portion of the active region and spaced apart from the gate structure, and at least a portion of the dielectric layer is sandwiched between the electrode and the portion of the active region.

Abstract: The present disclosure provides a semiconductor device with a copper-manganese liner and a method for preparing the semiconductor device. The semiconductor device includes a first well region and a second well region disposed in a semiconductor substrate. The semiconductor device also includes a first dielectric layer disposed over the semiconductor substrate and covering the first well region and the second well region, and a gate structure disposed over the first dielectric layer and between the first well region and the second well region. The semiconductor device further includes a conductive structure disposed over and separated from the first well region by a portion of the first dielectric layer. The conductive feature includes a barrier layer and a conductive plug disposed over the barrier layer, and the barrier layer is made of copper-manganese (CuMn). The first well region, the conductive structure and the portion of the first dielectric layer form an anti-fuse structure.

Abstract: The disclosure provides an electronic device including a substrate, an electronic element, a driving element, a first trace, a second trace, a conductive pattern, and an electrostatic discharge protection element. The substrate includes a first surface, a second surface, and a third surface. The third surface connects to the first surface and the second surface. The electronic element is disposed on the first surface. The driving element is disposed on the second surface. The first traces are disposed on the first surface. The second traces are disposed on the second surface and are electrically connected to the driving element, and the corresponding first traces are electrically connected to the corresponding second traces. The conductive pattern is electrically connected to the driving element and receives a grounding voltage or is floating. The electrostatic discharge protection element is disposed on the first surface and is electrically connected to the driving element.

Abstract: An electronic device is provided in this disclosure. In some embodiments, the electronic device includes two display panels, a first filling element, and a second filling element. The two display panels adjoin each other. The first filling element and the second filling element are disposed between the two display panels, and a material of the first filling element is different from a material of the second filling element. In some embodiments, the electronic device includes a protection substrate, two light emitting plates, and a filling element. The two light emitting plates adjoin each other. The protection substrate is disposed corresponding to the two light emitting plates, and the two light emitting plates emit light towards the protection substrate. The filling element is disposed between the two light emitting plates.

Abstract: A method for manufacturing a light emitting device is provided. The method for manufacturing the light emitting device includes: providing a substrate with light emitting units disposed thereon; attaching the light emitting units to a carrier; removing the substrate; and transferring a portion of the light emitting units from the carrier to a driving substrate.

Abstract: The present disclosure provides a semiconductor device with a copper-manganese liner and a method for forming the semiconductor device. The semiconductor device includes a first electrode and a second electrode disposed in a first dielectric layer. The semiconductor device also includes a first liner separating the first electrode from the first dielectric layer. The semiconductor device further includes a fuse link disposed in the first dielectric layer. The fuse link is disposed between and electrically connected to the first electrode and the second electrode, and the fuse link and the first liner are made of copper-manganese (CuMn).

Abstract: An electronic device including a light emitting element, a wavelength conversion layer, a conductive wire and a wavelength selection layer is provided by the present disclosure. The light emitting element is configured to emit a light. The wavelength conversion layer is configured to convert the light. The conductive wire is electrically connected to the light emitting element. The wavelength selection layer is disposed between the conductive wire and the wavelength conversion layer, wherein the conductive wire is cured by an energy beam, and the wavelength selection layer is configured to block the energy beam.

Abstract: The disclosure provides an electronic device and a method of manufacturing an electronic device. The electronic device includes a first substrate, a plurality of light-emitting diodes, a second substrate, a transparent material layer, and a sealing material. The first substrate comprises a first substrate body. The plurality of light-emitting diodes are disposed on the first substrate body. The second substrate is disposed opposite to the first substrate, and comprises a second substrate body. The transparent material layer is disposed between the first substrate and the second substrate. The sealing material is disposed between the first substrate and the second substrate and surrounds the transparent material layer. A distance between a bottom surface of the sealing material and a top surface of the first substrate body is less than a distance between a top surface of the sealing material and a bottom surface of the second substrate body.

Abstract: A manufacturing method includes providing a first substrate including a circuit layer and an electronic element disposed on the circuit layer, providing a second substrate, bonding the first substrate and the second substrate to form an electronic module, cutting the electronic module, forming a wire on a first surface exposed after cutting the electronic module and on a second surface of the electronic module, wherein the first surface is adjacent to the second surface and the wire is electrically connected to the circuit layer, and disposing a driving element on the second surface of the electronic module to be electrically connected to the wire.

Abstract: The display device includes a first substrate, a second substrate, a red filter layer, a green filter layer, a blue filter layer, a first light emitting diode and a second light emitting diode. The red filter layer, the green filter layer and the blue filter layer are disposed between the first substrate and the second substrate. A portion of the red filter layer, a portion of the green filter layer and a portion of the blue filter layer are stacked with each other to form a light blocking structure. The first light emitting diode and the second light emitting diode are disposed between the first substrate and the second substrate and adjacent to each other. An orthographic projection of the light blocking structure on the second substrate is located between orthographic projections of the first light emitting diode and the second light emitting diode on the second substrate.