Abstract: A method is provided for operating a transmitter integrated in a microelectronic element. In a calibration phase, a plurality of operational parameters are stored for controlling a frequency response of the transmitter under each of a plurality of corresponding operating conditions. Upon detecting an operating condition such as a temperature or power supply voltage level, the corresponding stored operational parameter is applied to the transmitter to control the frequency response.

Abstract: A system is provided for detecting a fault in a signal transmission path. In one embodiment, the system can include a variable amplitude signal attenuator which is operable to modify an input signal by variably attenuating a signal voltage swing of the input signal. Desirably, the input signal is attenuated only when transitioning from a high signal voltage level towards a low signal voltage level d variably, such that a larger high-to-low signal voltage swing is attenuated more than a smaller high-to-low signal voltage swing. Desirably, a comparator, which may apply hysteresis to the output signals, may detect a crossing of a reference voltage level by the modified input signal. In this way, when the comparator does not detect an expected crossing of the reference voltage level by the modified input signal, a determination can be made that a fault exists in the signal transmission path.

Abstract: A fuse/anti-fuse structure is provided in which programming of the anti-fuse is caused by an electromigation induced hillock that is formed adjacent to the fuse element. The hillock ruptures a thin diffusion barrier located on the sidewalls of the fuse element and the conductive material within the fuse element diffuses into the adjacent dielectric material. The fuse element includes a conductive material located within a line opening which includes a first diffusion barrier having a first thickness located on sidewalls and a bottom wall of the line opening. The anti-fuse element includes the conductive material located within a combined via and line opening which includes the first diffusion barrier located on sidewalls and a bottom wall of the combined via and line opening and a second diffusion barrier having a second thickness that is greater than the first thickness located on the first diffusion barrier.

Abstract: Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carrier substrate, and global interconnects among the chips are formed on the top planar surface of the finished chips. The proposed methods facilitate the integration of chips fabricated with different process steps and materials. There is no need to use a planarization process such as chemical-mechanical polish to planarize the top surfaces of the chips. Since the chips are precisely aligned to each other and all the chips are mounted facing up, the module is ready for global wiring, which eliminates the need to flip the chips from an upside-down position.

Abstract: Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.

Abstract: An integrated circuit is provided having a plurality of data transmitters, including a plurality of default data transmitters for transmitting data from a plurality of data sources and at least one redundancy data transmitter. A plurality of connection elements are provided having a first, low impedance connecting state and having a second, high impedance, disconnecting state. The connection elements are operable to disconnect a failing data transmitter from a corresponding output signal line and to connect the redundancy data transmitter to that output signal line in place of the failing data transmitter. In one preferred form, the connection elements include a fuse and an antifuse. In another form, the connection elements include micro-electromechanical (MEM) switches. The connecting elements preferably present the low impedance connecting state at frequencies which include signal switching frequencies above about 500 MHz.

Abstract: A method is provided for monitoring interconnect resistance within a semiconductor chip assembly. A semiconductor chip assembly can include a semiconductor chip having contacts exposed at a surface of the semiconductor chip and a substrate having exposed terminals in conductive communication with the contacts. A plurality of monitored elements of the semiconductor chip can include conductive interconnects, each interconnecting a respective pair of nodes of the semiconductor chip through wiring within the semiconductor chip. In an example of such method, a voltage drop across each monitored element is compared with a reference voltage drop across a respective reference element on the semiconductor chip at a plurality of different times during a lifetime of the semiconductor chip assembly. In that way, it can be detected when a resistance of such monitored element is over threshold. Based on a result of such comparison, a decision can be made whether to indicate an action condition.

Abstract: Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.

Abstract: Methods for manufacturing an integrated wafer scale package that reduces a potential misalignment between a chip and a pocket of a carrier substrate. According to one aspect of the present invention, a method for manufacturing a semiconductor device includes a photoresist layer disposed on a carrier substrate, a chip placed onto a surface of the photoresist layer. The photoresist layer is patterned using the chip as a mask. The chip is removed from the photoresist layer after the patterning step. A pocket is formed in the carrier substrate, and the chip that was removed is placed into the pocket formed in the carrier substrate.

Abstract: There is provided a circuit for managing a multi-level power supply. The circuit includes a comparator that compares a voltage level (Vs1) of a lower voltage supply bus to a voltage level (Vs2) of a higher voltage supply bus, and a switch that routes current from the lower voltage supply bus to the higher voltage supply bus if Vs2<Vs1. The comparator is powered by the lower voltage supply bus, the lower and higher voltage supply busses provide power to an apparatus that includes a plurality of p-type metal oxide semiconductor devices in a common well, and the common well is electrically connected to the higher voltage supply bus.

Abstract: A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; wherein the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.

Abstract: There is provided a method for managing a multi-level power supply. The method includes comparing a voltage level (Vs1) of a lower voltage supply bus to a voltage level (Vs2) of a higher voltage supply bus, and routing current from the lower voltage supply bus to the higher voltage supply bus if Vs2<Vs1. The lower and higher voltage supply busses provide power to a complementary metal oxide semiconductor (CMOS) circuit. The method prevents a latch-up of the CMOS circuit. There is also provided a circuit that employs the method.

Abstract: Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carrier substrate, and global interconnects among the chips are formed on the top planar surface of the finished chips. The proposed methods facilitate the integration of chips fabricated with different process steps and materials. There is no need to use a planarization process such as chemical-mechanical polish to planarize the top surfaces of the chips. Since the chips are precisely aligned to each other and all the chips are mounted facing up, the module is ready for global wiring, which eliminates the need to flip the chips from an upside-down position.

Abstract: According to the present invention, a circuit and methods for enhancing the operation of SOI fabricated devices are disclosed. In a preferred embodiment of the present invention, a pulse discharge circuit is provided. Here, a circuit is designed to provide a pulse that will discharge the accumulated electrical charge on the body of the SOI devices in the memory subarray just prior to the first access cycle. As explained above, once the accumulated charge has been dissipated, the speed penalty for successive accesses to the memory subarray is eliminated or greatly reduced. With a proper control signal, timing and sizing, this can be a very effective method to solve the problem associated with the SOI loading effect. Alternatively, instead of connecting the bodies of all SOI devices in a memory circuit to ground, the bodies of the N-channel FET pull-down devices of the local word line drivers can be selectively connected to a reference ground.

Abstract: A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.

Abstract: A method and structure for an integrated circuit chip has a logic core which includes a plurality of insulating and conducting levels, an exterior conductor level and passive devices having a conductive polymer directly connected to the exterior conductor level. The passive devices contain RF devices which also includes resistor, capacitor, and/or inductor. The resistors can be serpentine resistors and the capacitors can be interdigitated capacitors.

Abstract: A packaged semiconductor chip is provided which includes a semiconductor chip and a package element. The semiconductor chip includes a plurality of semiconductor devices and a plurality of conductive features disposed at an exterior face of the semiconductor chip. The package element has a plurality of external features conductively connected to the plurality of conductive features of the semiconductor chip. The semiconductor chip includes a monitored element including a conductive interconnect that conductively interconnects a first node of the semiconductor chip to a second node of the semiconductor chip. A detection circuit in the semiconductor chip is operable to compare a variable voltage drop across the monitored element with a reference voltage drop across a reference element on the chip at a plurality of different times during a lifetime of the packaged semiconductor chip so as to detect when the resistance of the monitored element is over threshold.

Abstract: A signal regenerator is provided which includes a common mode reference generator and a signal converter circuit. A common mode reference voltage level is generated which is variable in relation to at least one of a process used to fabricate the common mode reference generator, a level of a power supply voltage provided to the common mode reference generator or a temperature at which the common mode reference generator is operated. A signal converter circuit receives a differentially transmitted signal pair including a first input signal and a second input signal and outputs a single-ended output signal representing information carried by the differentially transmitted signal pair. Using a feedback signal from the common mode reference generator, a feedback control block controls a common mode level of the single-ended output signal in accordance with the common mode reference voltage level.

Abstract: In a method for performing equalization of a communication system, a predetermined signal can be transmitted from a transmitter unit to a receiver unit in a downchannel direction on a transmission line, for example as a pair of differential signals which simultaneously transition in opposite directions on respective signal conductors of the transmission line. At the receiver unit, an eye opening of the signal received from the transmission line can be analyzed to determine equalization information. Equalization information can be transmitted from the receiver unit to the transmitter unit in an upchannel direction on the transmission line and be received at the transmitter unit. Using received equalization information, a transmission characteristic of the transmitter unit can be adjusted.

Abstract: A semiconductor structure including at least one e-fuse embedded within a trench that is located in a semiconductor substrate (bulk or semiconductor-on-insulator) is provided. In accordance with the present invention, the e-fuse is in electrical contact with a dopant region that is located within the semiconductor substrate. The present invention also provides a method of fabricating such a semiconductor structure in which the embedded e-fuse is formed substantially at the same time with the trench isolation regions.