Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

Abstract: In a hybrid working machine, a control unit (60) corrects an output upper limit value of an engine (50) based on a deviation between a target revolution speed of the engine and an actual revolution speed of the engine, and output values of a motor generator (12), a hydraulically driven unit (54) and an electrically driven unit (56) are determined based on the corrected output upper limit value of the engine, or the control unit (60) corrects an output lower limit value of the motor generator (12) based on a deviation between the target revolution speed of the engine and the actual revolution speed of the engine, and the output values of the motor generator (12), the hydraulically driven unit (54) and the electrically driven unit (56) are determined based on the corrected output lower limit value of the motor generator (12).

Abstract: It is an object to provide a display device in which a problem of light leakage from a liquid crystal element in black display is reduced or overcome and the contrast is improved. It is another object to provide a pixel circuit having a function to control a lighting state of a backlight based on each pixel. These objects are achieved by turning off a light-emitting element in display of a black gray scale, and by providing a light-emitting element in each pixel and providing, in a pixel circuit, a function to individually control lighting and non-lighting of the light-emitting element depending on a gray scale to perform display. When a backlight is provided in each pixel, a light-emitting element that is a backlight is turned off when a black gray scale is displayed, whereby reduction in contrast due to light leakage from a liquid crystal element can be prevented.

Abstract: An object is to alleviate the concentration of an electric field in a semiconductor device. A gate electrode and a drain electrode are provided not to overlap with each other, and an electric-field control electrode is provided between the gate electrode and the drain electrode over a top surface. Insulating layers are provided between the gate electrode and a semiconductor layer and between the electric-field control electrode and the semiconductor layer, and the insulating layer provided between the electric-field control electrode and the semiconductor layer has a larger thickness than the insulating layer provided between the gate electrode and the semiconductor layer. Further, when the semiconductor device is driven, the potential of the electric-field control electrode may be higher than or equal to a source potential and lower than a gate potential, and for example, connection between the electric-field control electrode and the source potential enables such a structure.

Abstract: Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit.

Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

Abstract: The present invention is a semiconductor device including a first electrode over a substrate; a pair of oxide semiconductor films in contact with the first electrode; a second electrode in contact with the pair of oxide semiconductor films; a gate insulating film covering at least the first electrode and the pair of oxide semiconductor films; and a third electrode that is in contact with the gate insulating film and is formed at least between the pair of oxide semiconductor films. When the donor density of the oxide semiconductor films is 1.0×1013/cm3 or less, the thickness of the oxide semiconductor films is made larger than the in-plane length of each side of the oxide semiconductor films which is in contact with the first electrode.

Abstract: A hybrid-type working machine 1 includes an engine 11; a supercharger 42; an electric generator 12 that performs electricity generation by the driving force of the engine 11 and assists the driving force of the engine 11 through its own driving force; an inverter circuit 18A that is connected to an electric terminal of the electric generator 12; and a controller 30 which includes a nonvolatile memory 31 that stores first information indicating a correlation between the revolutions of the engine 11, the boost pressure of the supercharger 42 and an output upper limit value of the engine 11, and drives the inverter circuit 18A. The controller 30 controls the inverter circuit 18A so that the electric generator 12 assists the driving force when the required output exceeds the output upper limit value, based on a correlation stored in the nonvolatile memory 31.

Abstract: A hybrid working machine has an electric power accumulator charged by a generator driven by an engine and has an electrical load driven with electric power from the electric power accumulator. The hybrid working machine includes a direct-current bus electrically connected to the electric power accumulator, a voltage detector configured to detect the voltage of the direct-current bus, and a drive control part configured to control the driving of the generator based on the detected voltage value of the voltage detector. The drive control part is configured to control the generator based on the deviation between the detected voltage value and a voltage command value.

Abstract: A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 ?/cm2 is formed on at least one surface of each structure body.

Abstract: A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 ?/cm2 is formed on at least one surface of each structure body.

Abstract: A working machine includes: a first electric motor used for work; a second electric motor used for applications other than work; a first inverter circuit connected to the first electric motor; a second inverter circuit connected to the second electric motor; a battery connected to the first and second inverter circuits; and a control unit that drives the first and second inverter circuits. The control unit has a discharge mode to discharge electric power stored in the battery, and discharges the battery by stopping the first inverter circuit while driving the second inverter circuit in order to make the second electric motor perform electric operation in the discharge mode. Accordingly, since the state of charge is reduced, the life of a capacitor can be increased.

Abstract: In the hybrid-type construction machine, the control unit (60) includes a drive distributing unit (60-8) and an output condition calculating unit (60-9). The output condition calculating unit (60-9) calculates output conditions inclusive of an output setting of the electric storage device determined from a state of charge of the electric storage device (58), an output setting of the engine determined from a number of revolutions of the engine (50), a hydraulic load required value indicative of drive power required by the oil pressure generating unit, and an electric load required value indicative of electric power required by the electric drive unit. The drive distributing unit (60-8) determines output values of the electric drive unit and the hydraulic drive unit based on the calculated output conditions.

Abstract: A hybrid-type working machine includes a plurality of electric loads and an electric storage part supplying an electric power to a motor generator and the electric loads. A priority setting part sets a priority to each electric load. A supply power computing part computes an available electric power, which can be supplied from the motor generator and the electric storage part to the electric loads. A total power computing part computes a total electric power amount by summing electric power amounts requested by the electric loads. A power distributing part compares the available electric power with the total electric power amount, and, when the available electric power is larger than the total electric power amount, determines a distribution ratio of electric power amounts to be supplied to the respective electric loads based on the priority to limit the electric power amounts supplied to the electric loads.

Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

Abstract: An output terminal of a photoelectric conversion element included in the photoelectric conversion device is connected to a drain terminal and a gate terminal of a MOS transistor which is diode-connected, and a voltage Vout generated at the gate terminal of the MOS transistor is detected in accordance with a current Ip which is generated at the photoelectric conversion element. The voltage Vout generated at the gate terminal of the MOS transistor can be directly detected, so that the range of output can be widened than a method in which an output voltage is converted into a current by connecting a load resistor, and so on.

Abstract: Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit.

Abstract: An antenna capable of receiving circularly polarized waves and performing impedance matching between the antenna and an IC (integrated circuit) of a semiconductor device, and a semiconductor device having such an antenna. The antenna has a first conductor pattern with a loop configuration having a cut section, a second conductor pattern, a third conductor pattern, and a feeding section. A first end portion of the second conductor pattern and a first end portion of the third conductor pattern are connected to the first conductor pattern. A second end portion of the second conductor pattern and a second end portion of the third conductor pattern are connected to the feeding section. The total length of the second conductor pattern is longer than the total length of the third conductor pattern, and the second conductor pattern is placed closer to the cut section than the third conductor pattern is.

Abstract: A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 ?/cm2 is formed on at least one surface of each structure body.

Abstract: It is an object to provide a photoelectric conversion device which can solve the problem of leakage current or noise caused when the photoelectric conversion device is connected to an external circuit by amplifying the current flows through the photoelectric conversion element, and which can widen dynamic range of the output voltage which is obtained in accordance with the current flowing through the photoelectric conversion element. The photoelectric conversion device includes a voltage detection circuit, and a photoelectric conversion circuit including a photoelectric conversion element, a current mirror circuit, and a field effect transistor. The current mirror circuit is a circuit which amplifies and outputs a photocurrent generated at the photoelectric conversion element. The voltage detection circuit is connected to the gate terminal of the field effect transistor so as to detect generated voltage.