Abstract: In a word line driving circuit coupled to a word line of a memory cell array of a semiconductor memory device, a first transistor has a first terminal receiving an input signal based on a row address signal applied to the semiconductor memory device, a second terminal, and a control terminal receiving a first timing signal. A second transistor having a first terminal receiving a second timing signal, a second terminal connected to the word line, and a control terminal connected to the second terminal of the first transistor. A third transistor has a first terminal connected to the second terminal of the second transistor, a second terminal set at a predetermined potential, and a control terminal receiving a third timing signal. The first transistor has a threshold voltage less than that of at least one of the second and third transistors.

Abstract: This invention provides a hydraulically driven crawler vehicle in which pilot pressure for controlling the discharge of right and left variable displacement pumps is produced in response to the engine speed by throttle valves disposed in the discharge oil circuit of a fixed displacement pump, variable throttle valve in a branch circuit each installed in a pilot circuit for controlling the right and left crawlers is operated by a cam rotated by the steering wheel, and when the steering wheel is turned exceeding a certain angle, a direction change-over solenoid valve of variable displacement pump at the steering wheel turning side is energized to the reverse side so that the right and left crawlers are driven in the reverse direction to each other.

Abstract: A one-transistor one-capacitor type semiconductor memory device having a detection circuit for detecting the electric potential of a word line, to determine an appropriate timing for driving a sense amplifier, thereby improving the speed of memory operations.

Abstract: In a semiconductor integrated circuit having first and second power supply lines for receiving a power supply voltage, an external input terminal for receiving an input signal, and a high voltage detection circuit for detecting at the external input terminal a high voltage higher than a predetermined voltage which is higher than the power supply voltage, the high voltage detection circuit comprises an input circuit connected to the external input terminal for generating circuit for generating a reference voltage; and a differential voltage amplifier connected to receive the detection voltage and the reference voltage for amplifying the difference between the detection voltage and the reference voltage, to thereby determine whether the high voltage is applied, the input circuit comprising; a level shift element connected to the external input terminal for providing the detection voltage; an impedance element connected between the level shift element and the second power supply line; and a leak current compensa