Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: In a TFT substrate for a liquid crystal display and the liquid crystal display having such a TFT substrate, a defect in the wiring due to improper patterning of a gate electrode is prevented and an orientation property is improved by connecting wiring areas to a scan line and connecting a gate electrode to the scan line at two points, and the connecting wiring areas are formed in a ring shape so that a source electrode is located in an area surrounded by the connecting wiring areas, or arranging the wiring area to relieve a step.

Abstract: An image sensor in which a plurality of photoelectric conversion elements are arranged in a two-dimensional form and which has reading circuitry for enabling output signals from the elements in the row direction and output signals from the elements in the column direction to be read out in parallel.

Abstract: A small-size and large-capacitance capacitor is provided for the peripheral driving circuit of a liquid crystal display device. A capacitor exhibiting crystalline property is provided on a monocrystalline silicon in the peripheral driving circuit of a liquid crystal display device using an insulator film deposition process used to manufacture TFTs (thin-film transistors) of a display pixel portion and the peripheral driving circuit. The capacitor, using monocrystalline silicon as electrodes and an insulator on the monocrsytalline silicon as a dielectric, has a small size and a large capacitance as compared with a capacitor manufactured on amorphous silicon or monocrytalline silicon, and is thus capable of high quality display.

Abstract: There is provided a liquid crystal unit having an on-chip photodetector.On a transparent substrate are laid down a metallic wiring, an n-type a-Si, an a-SiGe, and a p-type a-Si successively, an insulating film is formed, and then a transparent electrode is formed to have a light detection region.

Abstract: A signal processor with a simplified circuit configuration provides an improved processing speed and can be realized of small size and at inexpensive cost. The signal processor includes signal holding means for holding output signals from plural signal sources (S1-S4), and signal mixing means (M31-M34) for mixing at least two signals among the plural signals held to output plural mixed signals. Since the mixed signals are less than the signal sources in number, the small number of signal lines can lead to an increased processing speed. Then the mixed signals corresponding to discrete signals from plural signal sources enables processing without substantially destroying information.

Abstract: A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.

Abstract: A reduction in circuit size, an increase in operation speed, and a reduction in power consumption can be attained by a semiconductor device, in which capacitors are connected to multiple input terminals through switch, one terminal of each capacitance is commonly connected, and the common connection terminal is connected to a sense amplifier, including a reset at a floating point which is the contact between the common connection terminal of the capacitors and the input of the sense amplifier. In addition, an increase in yield can be realized by reducing the manufacturing cost.

Abstract: A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

Abstract: A liquid crystal display device is provided which exhibits high performance of high fineness, high brightness, high contrast of images, and high compactness and low cost of the device. The liquid crystal device has an electroconductive layer under picture element electrodes, and the state of the polymer dispersion type liquid crystal is changed to a scattering mode in the region surrounding the picture element electrodes by application of voltage applied to the electroconductive layer.

Abstract: A display device including a liquid crystal held between an active matrix substrate made up by arranging thin film transistors thereon, each using polycrystalline silicon as a semiconductor layer, in one-to-one relation to intersections between a plurality of signal lines and a plurality of scan lines, and an opposite substrate opposed to the active matrix substrate, wherein the active matrix substrate includes a film having tensile stress disposed at least below or above the semiconductor layer.

Abstract: A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.

Abstract: A storage device comprises, on a substrate, a first semiconductor region of one conductivity type, second and third semiconductor regions of a conductivity type opposite to the one conductivity type contiguous to the first semiconductor region, a first electrode which is formed on a region for isolating the second and third semiconductor regions via an insulating layer, and a second electrode formed on the first electrode, but spaced therefrom by an insulating layer. The resistance between the first and second electrodes is selectively changed from a high-resistance state to a low-resistance state is needed, to record a bit of data.

Abstract: In a solid-state image pickup device this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signal in the invisible light range into an electrical signal, and photoelectric conversion elements for converting an optical signal in the visible light range into an electrical signal are formed on a common semiconductor chip.

Abstract: In a display device using a liquid-crystal panel, pixel electrodes for reflecting illuminating light, transistors for switching corresponding pixels, and a peripheral driving circuit are integrated on a Si semiconductor substrate. The angle of the surface of connecting portions of a jig for fixing and supporting the Si semiconductor substrate is made to be different from the angle of the surfaces of the pixel electrodes. A cooling device is mounted on the back of the Si semiconductor substrate.

Abstract: An electron emission device comprises an electron emission electrode with a pointed end and a counter electrode positioned opposite to the pointed end, both formed by fine working of a conductive layer laminated on an insulating substrate.

Abstract: In a semiconductor device in which a passive element and an active element are formed on a substrate in which a thin film semiconductor layer is formed on an insulating layer or an insulating substrate, the device has a concave portion in at least a part of a portion below a wiring connecting the passive element or the active element.

Abstract: This invention relates to a focus detecting apparatus using an area sensor as an AF sensor, and particularly provides a focus detecting apparatus in which when any area in a scene is designated and the focus state in that area is to be detected, the output from an area on the sensor corresponding to the designated area of the scene is read and processed on the basis of the information of an area on the area sensor corresponding to the designated area of the scene pre-memorized in a memory circuit.

Abstract: A liquid crystal display device is provided in which has a flat color filter substrate, and realizes higher contrast and larger picture size. For this purpose, light-intercepting layer is formed on TFT substrate, back light is placed on the side of TFT substrate, and a heat-radiating plate for the back light is placed between the back light and the liquid crystal panel to intercept light onto the non-display region.

Abstract: A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion.