Abstract: Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

Abstract: Methods, systems, and devices for controlled and mode-dependent heating of a memory device are described. In various examples, a memory device or an apparatus that includes a memory device may have circuitry configured to heat the memory device. The circuitry configured to heat the memory device may be activated, deactivated, or otherwise operated based on an indication of a temperature (e.g., of the memory device). In some examples, activating or otherwise operating the circuitry configured to heat the memory device may be based on an operating mode (e.g., of the memory device), which may be associated with certain access operations or operational states (e.g., of the memory device). Various operations or operating modes (e.g., of the memory device) may also be based on indications of a temperature (e.g., of the memory device).

Abstract: Methods, systems, and devices for signal sampling with offset calibration are described. For example, sampling circuitry may include an input pair of transistors where input signals may be provided to gate nodes of the transistors, and an output signal may be generated based on a comparison of voltages of drain nodes of the transistors. In some examples, source nodes of the transistors may be coupled with each other, such as via a resistance, and each source node may be configured to be coupled with a ground node. In some examples, a conductive path between the source nodes may be coupled with one or more switching components configurable for further coupling of the source nodes with the ground node. In some examples, enabling such switching components may add an electrical characteristic (e.g., capacitance) to the conductive path between the source nodes, which may be configurable to mitigate sampling circuitry imbalances.

Abstract: Systems, methods, and apparatuses for offset cancellation are described. A memory device may determine that a channel is in a state that interrupts an active termination of the channel and enable the calibration of a reference voltage (e.g., by the memory device). For example, a channel used for data communications with a second device (e.g., a controller) may initially be in a state of active termination. The memory device may determine that the channel has transitioned to another state that interrupts the active termination. While the channel is in the other state, the memory device may calibrate a reference voltage of a receiver by transmitting calibration signals on the channel and detecting an offset associated with a reference voltage. The memory device may use the detected offset and the reference voltage to identify signals transmitted to the memory device over the channel.

Abstract: Methods, systems, and devices for back-bias optimization are described. An apparatus, such as an electronic apparatus, may include a first substrate region and a second substrate region. The apparatus may also include a voltage generator that is disposed on the first substrate region and that includes an output terminal coupled with a conductive path. The apparatus may also include a set of clamp circuits disposed on the second substrate region. The set of clamp circuits may be configured selectively couple the conductive path with a voltage supply.

Abstract: Methods, systems, and devices for multi-level receivers with various operating modes (e.g., on-die termination mode, termination-off mode, etc.) are described. Different modes may be utilized for receiving different types of signaling over a channel. Each mode may correspond to the use of a respective set of receivers configured for the different types of signaling. For example, a device may include a first set of receivers used to receive a first type of signal (e.g., with the channel being actively terminated) and a second set of receivers used to receive a second type of signal (e.g., with the channel being non-terminated). When communicating with another device, based on the type of signaling used for communications, either the first set of receivers or the second set of receivers may be enabled (e.g., through selecting a receiver path for the corresponding mode).

Abstract: A phase-locked loop (PLL) circuit is configured to adjust a value of a bias voltage based on a comparison between a reference clock signal and a feedback clock signal, and an oscillator circuit is configured to provide the feedback clock signal and phase-shifted clock signals based on a value of the bias voltage. A frequency detector of the frequency detector is configured to cause an adjustment to the value of the bias voltage in response to detection of a frequency deviation between the reference clock signal and the feedback clock signal. To avoid a metastable state, the frequency detector is configured to apply an asynchronous delay to one of the reference clock signal or the feedback clock signal prior to detection of the frequency deviation.

Abstract: Methods, systems, and devices for controlled and mode-dependent heating of a memory device are described. In various examples, a memory device or an apparatus that includes a memory device may have circuitry configured to heat the memory device. The circuitry configured to heat the memory device may be activated, deactivated, or otherwise operated based on an indication of a temperature (e.g., of the memory device). In some examples, activating or otherwise operating the circuitry configured to heat the memory device may be based on an operating mode (e.g., of the memory device), which may be associated with certain access operations or operational states (e.g., of the memory device). Various operations or operating modes (e.g., of the memory device) may also be based on indications of a temperature (e.g., of the memory device).

Abstract: Methods, systems, and devices for dynamically configuring transmission lines of a bus between two electronic devices (e.g., a controller and memory device) are described. A first device may determine a quantity of bits (e.g., data bits, control bits) to be communicated with a second device over a data bus. The first device may partition the data bus into a first set of transmission lines (e.g., based on the quantity of data bits) and a second set of transmission lines (e.g., based on the quantity of control bits). The first device may communicate the quantity of data bits over the first set of transmission lines and communicate the quantity of control bits over the second set of transmission lines. In some cases, the first device may repartition the data bus based on different quantities of data bits and control bits to be communicated with the second device at a different time.

Abstract: Methods, systems, and devices for error detection, error correction, and error management by memory devices are described. Programmable thresholds may be configured for a memory device based on a type of data or a location of stored data, among other aspects. For example, a host device may configure a threshold quantity of errors for data at a memory device. When retrieving the data, the memory device may track or count errors in the data and determine whether the threshold has been satisfied. The memory device may transmit (e.g., to the host device) an indication whether the threshold has been satisfied, and the system may perform functions to correct the errors and/or prevent further errors. The memory device may also identify errors in received commands or may identify errors introduced in data after the data was received (e.g., using an error detecting code associated with a command or bus).

Abstract: Methods, systems, and devices for reporting control information errors are described. A state of a memory array may be monitored during operation. After detecting an error (e.g., in received control information), the memory device may enter a first state (e.g., a locked state) and may indicate to a host device that an error was detected, the state of the memory array before the error was detected, and/or at least a portion of a control signal carrying the received control information. The host device may diagnose a cause of the error based on receiving the indication of the error and/or the copy of the control signal. After identifying and/or resolving the cause of the error, the host device may transmit one or more commands (e.g., unlocking the memory device and returning the memory array to the original state) based on receiving the original state from the memory device.

Abstract: Methods, systems, and devices for phase clock correction are described. The clock correction may, in some examples, include two stages of duty cycle adjustment. In a first stage, the duty cycles of multiple clock signals may be adjusted. These clock signals may be based on an input clock signal and its complement. The duty cycle adjustment provided to a clock signal during this stage may be based on a difference between the duty cycle of the clock signal before adjustment and the duty cycle of another clock signal. In the second stage, the duty cycle of the input clock signal and its complement may be adjusted. The duty cycle adjustment provided to the input clock signal and/or its complement may be based on clock signals generated from the multiple clock signals after their duty cycles have been adjusted.

Abstract: Methods, systems, and devices for receive-side crosstalk cancelation are described. A device that receives multiple signals over different transmission lines may include a circuit for canceling crosstalk. The circuit may include one or more capacitors or inductors that are coupled with the inputs of multiple receive circuits. The circuit may also include a set of resistors that are coupled with the receive circuits. In some cases, the device may dynamically configure the cancelation circuit to provide a particular bandwidth or strength of cancelation. In such cases, the device may configure the circuit autonomously or based on control information from another device.

Abstract: Systems, apparatuses, and methods for training procedures on reference voltages and sampling times associated with symbols communicated with a memory device are described. The training procedures may be configured to compensate for variations that may occur in different symbols of a signal. For example, an individual training operation may be performed for each reference voltage within a first unit interval. These individual training operations may allow a reference voltage of the first unit interval to be positionable independent of other reference voltages in the same unit interval or in different unit intervals. In another example, an individual training operation may be performed for the sampling time associated with a reference voltage. These individual training operations may allow a sampling time associated with a reference voltage in the first unit interval to be positionable independent of other sampling times in the same unit interval or in different unit intervals.

Abstract: Methods, systems, and devices for drive strength calibration for multi-level signaling are described. A driver may be configured to have an initial drive strength and to drive an output pin of a transmitting device toward an intermediate voltage level of a multi-level modulation scheme, where the output pin is coupled with a receiving device via a channel. The receiving device may generate, and the transmitting device may receive, a feedback signal indicating a relationship between the resulting voltage of the channel and an value for the intermediate voltage level. The transmitting device may determine and configure the driver to use an adjusted drive strength for the intermediate voltage level based on the feedback signal. The driver may be calibrated (e.g., independently) for each intermediate voltage level of the multi-level modulation scheme. Further, the driver may be calibrated for the associated channel.

Abstract: Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

Abstract: Methods, systems, and devices for error detection, error correction, and error management by memory devices are described. Error thresholds for a memory device are configurable based on parameters such as a type of data or a location of stored data. When retrieving the data, the memory device tracks or counts errors in the data and determines whether the error threshold has been satisfied. The memory device transmits (e.g., to a host device) an indication of whether the error threshold has been satisfied, and the system is configured to perform functions to correct the errors and/or prevent further errors. The memory device is also configured to identify errors in received commands or to identify errors introduced in data after the data was received (e.g., using an error detecting code associated with a command or bus).

Abstract: Methods, systems, and devices for receive-side crosstalk cancelation are described. A device that receives multiple signals over different transmission lines may include a circuit for canceling crosstalk. The circuit may include one or more capacitors or inductors that are coupled with the inputs of multiple receive circuits. The circuit may also include a set of resistors that are coupled with the receive circuits. In some cases, the device may dynamically configure the cancelation circuit to provide a particular bandwidth or strength of cancelation. In such cases, the device may configure the circuit autonomously or based on control information from another device.

Abstract: Methods, systems, and devices for multi-level receivers with various operating modes (e.g., on-die termination mode, termination-off mode, etc.) are described. Different modes may be utilized for receiving different types of signaling over a channel. Each mode may correspond to the use of a respective set of receivers configured for the different types of signaling. For example, a device may include a first set of receivers used to receive a first type of signal (e.g., with the channel being actively terminated) and a second set of receivers used to receive a second type of signal (e.g., with the channel being non-terminated). When communicating with another device, based on the type of signaling used for communications, either the first set of receivers or the second set of receivers may be enabled (e.g., through selecting a receiver path for the corresponding mode).

Abstract: Methods, systems, and devices for dynamically configuring transmission lines of a bus between two electronic devices (e.g., a controller and memory device) are described. A first device may determine a quantity of bits (e.g., data bits, control bits) to be communicated with a second device over a data bus. The first device may partition the data bus into a first set of transmission lines (e.g., based on the quantity of data bits) and a second set of transmission lines (e.g., based on the quantity of control bits). The first device may communicate the quantity of data bits over the first set of transmission lines and communicate the quantity of control bits over the second set of transmission lines. In some cases, the first device may repartition the data bus based on different quantities of data bits and control bits to be communicated with the second device at a different time.