Abstract: A memory arrangement in a computer system can have at least one memory module with semiconductor components, which are arranged on the memory module, can be operated in parallel and are additionally connected to one another via a serial line. The memory arrangement can have an interface bus for driving the semiconductor components on a module-specific basis, and an interface, which is driven by a memory controller assigned to the memory module via the interface bus and accesses the semiconductor components via the serial line. During normal operation, it is possible to test and adjust the semiconductor components in proximity to the application and on a chip-specific basis via the interface.

Abstract: An integrated semiconductor memory device includes sense amplifiers that are connected to in each case one bit line pair via controllable voltage generators. In a test mode state, precharging voltages can be fed to at least one of the bit lines of each one of the bit line pairs via the controllable voltage generators. The level of the precharging voltage is dependent on a data item present at a data terminal. The precharging voltages of a bit line pair can be transferred to an adjacent bit line pair via a coupling unit. In a subsequent evaluation process, the prepared precharging voltages are evaluated by the connected sense amplifier.

Abstract: An integrated semiconductor memory device includes external terminals to which an input signal can be applied to each external terminal, and a register circuit with registers. Each register stores a respective input signal. A programming circuit is also provided with programmable switching units configured such that, in a manner dependent on a respective programming state of the programmable switching units, each respective external terminal can be connected to a respective register of the register circuit. The programming circuit can be programmed by applying unit vectors of programming signals alternately to the external terminals. In this case, the programming signal having a first state is applied in each case to one of the external terminals and the programming signal having a second state is applied to the rest of the external terminals. The integrated semiconductor memory makes it possible for an unknown line scrambling to be resolved internally.

Abstract: A semiconductor circuit can have a standard interface for external data, address and/or command interchange in normal operation and a further test interface provided for a test operation with a semiconductor component and with a BIST unit (built-in self-test) assigned to the semiconductor component. The semiconductor circuit can also have a BIST controller for initialization, testing and application-near setting of the semiconductor component, a read-only nonvolatile memory, a programmable nonvolatile memory, and a volatile memory. The processed data stored as operating, test and/or boot parameters in the programmable nonvolatile memory are used during booting and in normal operation for test and configuration purposes for application-near setting of the semiconductor circuit.

Abstract: An integrated semiconductor memory has regular row and column lines, which can be replaced with redundant row and column lines in the event of a fault. Following initialization of the memory cells with an initialization data item, a data generator circuit writes an identification data item to the memory cells along a regular row or column line. A faulty regular row or column line is replaced with the associated redundant row or column line. Next, the initialization data item is written to memory cells along sound regular row or column lines and the respective identification data item is written to the memory cells along a faulty regular row or column line. Faulty regular row or column lines have the same data value in their memory cells as the redundant row or column lines replacing them.

Abstract: A memory module has an electronic printed circuit board and a plurality of semiconductor memory chips. A series circuit of the semiconductor memory chips is formed with the aid of two leads that can be driven by external contacts of the printed circuit board, and with the aid of connection lines between in each case two semiconductor memory chips. By means of the series circuit, individual semiconductor memory chips can be driven selectively with respect to the rest of the semiconductor memory chips without having to interrupt the regular data transport via the address and control lines. During normal memory operation, chip-specific test data or other data can be interrogated and be read out via an electric loop formed between the further external contacts.

Abstract: The invention relates to a semi-conductor component, and a process for the in- and/or output of test data and/or semi-conductor component operating control data into or from a semi-conductor component, whereby the semi-conductor component comprises one or more useful data memory cells, and/or one or more test data and/or semi-conductor component operating control data registers for storing test data and/or semi-conductor component operating control data, and whereby the process comprises the steps of applying a control signal to the semi-conductor component, whereby the semi-conductor component is switched from a first to a second operating mode; and applying an address signal to the semi-conductor component, whereby one or more of the test data and/or semi-conductor component operating control data registers of the semi-conductor component is addressed by the address signal in the second operating mode, and one or more of the useful data memory cells in the first operating mode.

Abstract: An electronic memory apparatus has a plurality of memory devices, a plurality of temperature sensors and a control unit. The memory devices each have a multiplicity of nonvolatile memory cells that are refreshed during operation of the electronic memory apparatus. The control unit passes a same periodic clock signal to each of the memory devices. The clock signal causes the memory cells to be refreshed in the memory devices. Each temperature sensor is associated with a respective memory device and measures a local temperature near the respective memory device during operation. Each memory device individually determines, on the basis of the temperature measured by the temperature sensor that is assigned to it, how many of its memory cells are simultaneously refreshed when memory cells are being refreshed.

Abstract: A circuit for refreshing memory cells of a dynamic memory contains a refresh control circuit for driving a memory cell array for accessing memory cells of the dynamic memory for a refresh process. Furthermore, a storage circuit is provided, which is assigned to at least one of the memory cells, for storing a time information item with regard to a last previous access to the assigned memory cell during the operation of the memory, a register bit being set in a manner dependent on the stored time information item and being able to be evaluated for controlling a refresh process. The refresh control circuit calls up the time information item stored in the storage circuit during operation of the memory and accesses the memory cell array in such a way that the memory cell assigned to the storage circuit is refreshed in a manner dependent on the time information item.

Abstract: A memory device and method for testing memory devices with repairable redundancy is disclosed. In one embodiment, both the regular memory area and the redundant memory area are subject to the same loads during manufacturing and test processes, and that at least one regular memory cell from a regular memory area and at least one redundant memory cell from a redundant memory area are connected with each other via a coupling circuit. The coupling circuit, in particular during the testing of the operability of the semiconductor memory device or of the memory cells, respectively, determines the state of the regular memory cell and/or the redundant memory cell. Thus, in tested and repaired semiconductor memory devices, so-called redundancy storage space for the repair of defective memory capacity can be provided for repair even in the last memory test step, including full test severity and fulfilling all and any reliability requirements for the repair of high-grade memory devices.

Abstract: An integrated memory contains an addressing unit for addressing memory cells for a memory access on the basis of received addressing signals. An addressing calculation logic unit is connected to the addressing unit. The latter can be activated by a test mode signal for a test operation of the memory. The addressing calculation logic unit receives command signals and address signals for the test operation, calculates therefrom the addressing signals for the memory access and feeds the latter into the addressing unit. After an initialization with the loading of initial parameters, the command signals and address signals for the test operation are applied to the addressing calculation logic unit and read/write operations are carried out by an access controller. An integrated memory with implemented BIST hardware, in the case of which a comparatively high functionality and flexibility during the memory test, are nevertheless made possible.

Abstract: An integrated semiconductor memory device includes sense amplifiers that are connected to in each case one bit line pair via controllable voltage generators. In a test mode state, precharging voltages can be fed to at least one of the bit lines of each one of the bit line pairs via the controllable voltage generators. The level of the precharging voltage is dependent on a data item present at a data terminal. The precharging voltages of a bit line pair can be transferred to an adjacent bit line pair via a coupling unit. In a subsequent evaluation process, the prepared precharging voltages are evaluated by the connected sense amplifier.

Abstract: A circuit configuration for measuring at least one operating parameter for an integrated circuit includes an analysis circuit connected to at least one external connection on the integrated circuit. The analysis circuit detects a plurality of voltage level changes on the external connection, which is used to control a method of operation for the integrated circuit, in particular, and supplies them to a counter circuit that logs at least one digitally coded value. The coded value is, then, output for analysis purposes to ascertain at least one operating parameter. This, advantageously, allows an average mode of operation for the integrated circuit to be logged during operation of the circuit in the application using parameters and allows respective operating states to be ascertained.

Abstract: An integrated semiconductor memory device includes a control circuit with a mode register to store operating parameters, as well as further registers to store further operating parameters. An operating parameter is selectively written to or read from one of the registers for storage of an operating parameter as a function of a first or second state of a configuration signal that is applied to an address connection. Any subsequent write and read access to one of the registers for storage of an operating parameter takes place analogously to a write and read access to a memory cell in a memory cell array. The integrated semiconductor memory device is thus operated to allow writing and reading of operating parameters using a standard interface and a standard protocol for inputting and outputting data to and from the memory cell array.

Abstract: An integrated semiconductor memory (1) has a multiplicity of memory cells (Z) and first lines (10) and second lines (20) that can be used to actuate the memory cells (Z). The path of each of the first lines (10) contains a respective device (5) that permits actuation of memory cells exclusively in the region of first subsections (I) of the first lines (10). The devices (5) can be set such that they bring about only partial decoupling of the second subsections (II) of the first lines (10) from the slatter's first subsections (I), with memory cells either in the region of the first subsections (I) only or in the region of both subsections (I, II) being able to be actuated, depending on the choice of a relatively short or a relatively long access time to the memory cells. This allows subregions of the semiconductor memory to be used for power-saving and faster memory operation.

Abstract: A circuit for controlling a refresh rate of memory cells of a dynamic memory includes a control circuit for controlling an access to memory cells of the dynamic memory. A memory circuit can be driven by the control circuit and stores a time information item with regard to an access to a memory cell assigned to the time information item. The control circuit can be operated in a supervisory operating mode such that a time information item is written to the memory circuit by the control circuit in the event of an access to the assigned memory cell. The time information item is read out in the event of a subsequent access to the assigned memory cell.

Abstract: An integrated semiconductor memory device includes external terminals to which an input signal can be applied to each external terminal, and a register circuit with registers. Each register stores a respective input signal. A programming circuit is also provided with programmable switching units configured such that, in a manner dependent on a respective programming state of the programmable switching units, each respective external terminal can be connected to a respective register of the register circuit. The programming circuit can be programmed by applying unit vectors of programming signals alternately to the external terminals. In this case, the programming signal having a first state is applied in each case to one of the external terminals and the programming signal having a second state is applied to the rest of the external terminals. The integrated semiconductor memory makes it possible for an unknown line scrambling to be resolved internally.

Abstract: The invention relates to a semi-conductor component, and a process for the in- and/or output of test data and/or semi-conductor component operating control data into or from a semi-conductor component, whereby the semi-conductor component comprises one or more useful data memory cells, and/or one or more test data and/or semi-conductor component operating control data registers for storing test data and/or semi-conductor component operating control data, and whereby the process comprises the steps of applying a control signal to the semi-conductor component, whereby the semi-conductor component is switched from a first to a second operating mode; and applying an address signal to the semi-conductor component, whereby one or more of the test data and/or semi-conductor component operating control data registers of the semi-conductor component is addressed by the address signal in the second operating mode, and one or more of the useful data memory cells in the first operating mode.

Abstract: A nonvolatile memory cell (1) can be integrated in space-saving fashion into a semiconductor circuit (10) intended for volatile storage with the aid of volatile memory cells (2). The memory cell (1) has a programmable component (3) having an electrical resistance that can be altered by reprogramming, and also first (8) and second switching elements (9), which switch a first current path (J1) or a second current path (J2) in conducting fashion upon activation of optionally a first (11) or a second word line (12). At least one of the two current paths leads via the programmable component (3). Potentials of two bit lines (21, 22) to which the memory cell (1) according to the invention is connected can be altered as a result of the first or the second current path (J1, J2) being activated temporarily. The memory cell (1) permanently stores an item of digital information and can be driven by word lines (11, 12) and bit lines (21, 22) such as are conventionally used in volatile semiconductor memories (10).

Abstract: A semiconductor module has a plurality of contact terminals used for external data interchange, address interchange and/or command interchange during normal operation of the semiconductor module. The module further has at least one further contact terminal that is not used for external data interchange, address interchange and/or command interchange during normal operation. A mode of operation for ascertaining and outputting test information and, respectively, for configuring the semiconductor module during normal operation of the semiconductor module is initialized and set via a test and configuration circuit, which is connected to the further contact terminal, with data interchange, address interchange and/or command interchange simultaneously being effected during normal operation of the semiconductor module via the contact terminals.