Abstract: According to one embodiment, a semiconductor device of a junctionless structure includes a semiconductor layer of a first conductivity type. A pair of source/drain electrodes at a distance is on the semiconductor layer. A gate insulating film is on the semiconductor layer between the source/drain electrodes. A gate electrode is on the gate insulating film. The semiconductor layer has two or more kinds of impurities. One kind of the two or more kinds of impurities is an element selected from a group of chalcogens, and another kind of the two or more kinds of impurities is a first conductivity type impurity.

Abstract: The present invention provides an airbag that is capable of stabilizing a flow of a gas introduced into a lower air chamber to thereby stabilize an expansion behavior, the air bag being capable of stably constraining an occupant. Along a bulkhead configured to partition an airbag main body portion into an upper air chamber and the lower air chamber, a patch is mounted into the lower air chamber so that a rear end part is opposed to a distributing portion. The patch is expanded by means of a gas introduced into the lower air chamber in an expanded state of an inflating portion of the airbag main body portion to thereby form a cover portion along an interior face of the lower air chamber and a redundant portion configured to slacken with respect to the interior face of the lower air chamber.

Abstract: An axial flow fan includes a first lead wire engaging portion configured to be engaged with a plurality of lead wires such that the lead wires are pulled out therefrom into an outer space defined between a first flange and a second flange of a fan housing, a second lead wire engaging portion configured to be engaged with the plurality of lead wires such that the lead wires are pulled out toward the other side in the axial direction where the second flange is positioned, and a third lead wire engaging portion configured to be engaged with the plurality of lead wires such that the lead wires are pulled out in the axial direction toward one side where the first flange is positioned. The third lead wire engaging portion is formed in the first flange at a given distance from the first lead wire engaging portion.

Abstract: An axial flow fan provided herein allows for a wide range of selection for placement of the fan and wiring of the lead wires.

Abstract: In an ultrasonic inspection method or ultrasonic inspection system in which an ultrasonic wave is propagated to an test object via a medium such as a liquid or a gas, an incident position of the ultrasonic wave is accurately and reliably identified. In an ultrasonic inspection method based on an immersion technique, an optical irradiator is mounted on an ultrasonic wave transmitting/receiving unit, an optical marker is irradiated from the optical irradiator to the test object, and an irradiated position of the optical marker is imaged using imaging equipment in order to perform inspection.

Abstract: A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second i

Abstract: A fan frame accommodates a fan for blowing air or cooling and has a hole into which a tapping screw is fixed. The hole has a first hole portion opened in an attachment surface onto which a supporting member fixed by the tapping screw is attached and a second hole portion extending from the first hole portion and having a predetermined inner diameter. The first hole portion of the hole is formed to have a diameter larger than that of the second hole portion.

Abstract: A cache server control device selects cache servers necessary for storing contents to be reproduced, and allows the selected cache servers 300 store the contents to be reproduced; the cache server control device herein uses a first threshold value when the number of units of the cache servers, for storing the content to be reproduced related to the judgment, is increased; and uses a second threshold value, being smaller than the first threshold value, when the number of units of the cache servers, for storing said content to be reproduced related to the judgment, is decreased.

Abstract: A semiconductor device includes a MISFET comprising: a semiconductor layer including a semiconductor region formed therein; a gate insulating film formed above the semiconductor region, and including a metal oxide layer containing a metal and oxygen, the metal contained in the metal oxide layer being at least one selected from Hf and Zr, the metal oxide layer further including at least one element selected from the group consisting of Ru, Cr, Os, V, Tc, and Nb, the metal oxide layer having sites that capture or release charges formed by inclusion of the element, density of the element in the metal oxide layer being in the range of 1×1015 cm?3 to 2.96×1020 cm?3, the sites being distributed to have a peak closer to the semiconductor region than to a center of the metal oxide layer; and a gate electrode formed on the gate insulating film.

Abstract: A laser machining apparatus is provided with: a workpiece support unit; a machining head; and a machining head moving unit. The workpiece support unit includes: an end support part that supports a width end of a workpiece; and an inside support part that supports an inside portion of the workpiece in a width direction. The end support part is movable in a longitudinal direction independently from the inside support part in response to a movement of the machining head.

Abstract: An airbag is formed of two base fabrics. An adhesive agent is pasted with some width on one of the base fabrics and then another of the base fabrics is put on the one of the base fabrics. The two fabrics are adhered together to form the airbag. Pasting start/end portions of the adhesive agent is set at a gas introducing portion of the airbag. Pasting start/end points (terminal ends of the start/end portions) is located outside a path in the gas introducing portion through which a gas is introduced into an inside of the airbag. According to an airbag with the airbag, assembling workability of the airbag can be improved.

Abstract: The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.

Abstract: A heat-resistant ultrasonic sensor forms a piezo-electric ceramics film with a thickness of 0.5 mm or smaller and a Curie point of 200° C. or higher on a flexible metal plate. A thin metal film that is an electrode is attached to a top surface of the piezo-electric ceramics film and a metal wire mesh covers the thin metal film and is attached to a top surface of the thin metal film. A core of a heat-resistant coaxial cable is connected to the metal wire mesh at a connection point. The heat-resistant coaxial cable is fixed to the thin metal plate with a metal fixing member that is a ground portion. An electric insulating cover is attached to the thin metal plate and covers the piezo-electric ceramics film, the thin metal film, the metal wire mesh, the connection point, the fixing member, and the core of the coaxial cable.

Abstract: A jet pump beam (hereinafter, referred to as a beam) is fitted into a pair of projecting portions installed to a transition piece, and after the beam is arched, a beam bolt engaged with the beam is tightened. An end of the beam bolt comes in contact with a top surface of an insert member fitted into an elbow disposed between the pair of projecting portions. An ultrasonic sensor head is fixed to the beam bolt, and ultrasonic waves are sent to the beam bolt from the ultrasonic sensor in the ultrasonic sensor head. An ultrasonic measuring apparatus obtains echo intensity of each of reflected waves generated at the end of the beam bolt and a bottom surface of the insert member, and based on the echo intensities, an echo intensity ratio R is calculated. The installed state of the beam is checked using the echo intensity ratio R.

Abstract: A method of installing a jet pump beam includes, disposing an inlet mixer having one end portion inserted to a diffuser provided in a reactor pressure vessel and an other end portion communicated with a riser pipe disposed in the reactor pressure vessel between a pair of projecting portions of a transition piece provided to the riser pipe, separately inserting both end portions of a jet pump beam disposed above the inlet mixer into a groove formed in each of the pair of projecting portions, arching the jet pump beam by moving a center portion of the jet pump beam upward, pushing a screw member engaged with the arched jet pump beam against the inlet mixer, and measuring deflection amount of the arched jet pump beam when the screw member is being pushed against the inlet mixer.

Abstract: A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

Abstract: A transmitting section of the present invention initiates transmission of a second video continuously after completing transmission of a first video being transmitted, in a case that a reproduction position of the first video being transmitted is beyond an end point of the first video, when a video recording start time of a second video stored in a video storage section and a video recording end time of the first video being transmitted coincide within a predetermined time difference.

Abstract: The present invention provides a semiconductor device including: a semiconductor chip mounted on a substrate; a heat spreader provided above the semiconductor chip; and a sealing resin interposed between the semiconductor chip and the heat spreader and covering the semiconductor chip. The heat spreader is not in contact with any of the substrate and the semiconductor chip, and has an opening.

Abstract: In an ultrasonic inspection method or ultrasonic inspection system in which an ultrasonic wave is propagated to an test object via a medium such as a liquid or a gas, an incident position of the ultrasonic wave is accurately and reliably identified. In an ultrasonic inspection method based on an immersion technique, an optical irradiator is mounted on an ultrasonic wave transmitting/receiving unit, an optical marker is irradiated from the optical irradiator to the test object, and an irradiated position of the optical marker is imaged using imaging equipment in order to perform inspection.

Abstract: A cache server control device selects cache servers necessary for storing contents to be reproduced, and allows the selected cache servers 300 store the contents to be reproduced; the cache server control device herein uses a first threshold value when the number of units of the cache servers, for storing the content to be reproduced related to the judgment, is increased; and uses a second threshold value, being smaller than the first threshold value, when the number of units of the cache servers, for storing said content to be reproduced related to the judgment, is decreased.