Abstract: The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.

Abstract: A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

Abstract: An axial flow fan provided herein allows for a wide range of selection for placement of the fan and wiring of the lead wires.

Abstract: The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.

Abstract: An eddy current testing method for a turbine rotor including a disc, a plurality of turbine blades disposed along the periphery of the disc, and a plurality of pins for joining a blade fork portion formed on each of the plurality of turbine blades to a disc fork portion formed on the disc, the method including inserting a probe having an eddy current testing sensor into a hole formed through the disc fork portion and the blade fork portion by pulling out one of the plurality of pins in a state that the blade fork portion is still inserted into the disc fork portion; and performing eddy current testing for at least part of an internal surface of the hole by using the probe.

Abstract: An ultrasonic testing apparatus for a turbine fork of a turbine blade joined to a turbine disc, comprising: an ultrasonic testing sensor; a sensor mounting apparatus for mounting the ultrasonic testing sensor on a flat portion on a side surface of the turbine fork with the turbine blade joined to the turbine disc; and an ultrasonic testing apparatus for inspecting internal and external surfaces of the turbine fork by using reflected waves, which is received by the ultrasonic testing sensor, from the internal surface of the turbine fork.

Abstract: A liquid ejection device includes: a liquid ejection head which includes an ejection surface and an ejection port formed at the ejection surface, ejects a droplet of liquid from the ejection port, and allows the liquid to land on an object; an elastic absorbing member which comes into contact with the ejection surface of the liquid ejection head, and absorbs the liquid adhering to the ejection surface; and moving means for moving the absorbing member with respect to the ejection surface while the absorbing member is in contact with the ejection surface, in which the absorbing member has a surface layer which is impregnated with a solution containing a surfactant.

Abstract: A semiconductor device includes a MISFET comprising: a semiconductor layer including a semiconductor region formed therein; a gate insulating film formed above the semiconductor region, and including a metal oxide layer containing a metal and oxygen, the metal contained in the metal oxide layer being at least one selected from Hf and Zr, the metal oxide layer further including at least one element selected from the group consisting of Ru, Cr, Os, V, Tc, and Nb, the metal oxide layer having sites that capture or release charges formed by inclusion of the element, density of the element in the metal oxide layer being in the range of 1×1015 cm?3 to 2.96×1020 cm?3, the sites being distributed to have a peak closer to the semiconductor region than to a center of the metal oxide layer; and a gate electrode formed on the gate insulating film.

Abstract: The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.

Abstract: An airbag is formed of two base fabrics. An adhesive agent is pasted with some width on one of the base fabrics and then another of the base fabrics is put on the one of the base fabrics. The two fabrics are adhered together to form the airbag. Pasting start/end portions of the adhesive agent is set at a gas introducing portion of the airbag. Pasting start/end points (terminal ends of the start/end portions) is located outside a path in the gas introducing portion through which a gas is introduced into an inside of the airbag. According to an airbag with the airbag, assembling workability of the airbag can be improved.

Abstract: The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.

Abstract: The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.

Abstract: A nonvolatile semiconductor memory apparatus includes: a source and drain regions formed at a distance from each other in a semiconductor layer; a first insulating film formed on the semiconductor layer located between the source region and the drain region, the first insulating film including a first insulating layer and a second insulating layer formed on the first insulating layer and having a higher dielectric constant than the first insulating layer, the second insulating layer having a first site performing hole trapping and releasing, the first site being formed by adding an element different from a base material to the second insulating film, the first site being located at a lower level than a Fermi level of a material forming the semiconductor layer; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

Abstract: A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

Abstract: An ultrasonic testing apparatus for a turbine fork of a turbine blade joined to a turbine disc, comprising: an ultrasonic testing sensor; a sensor mounting apparatus for mounting the ultrasonic testing sensor on a flat portion on a side surface of the turbine fork with the turbine blade joined to the turbine disc; and an ultrasonic testing apparatus for inspecting internal and external surfaces of the turbine fork by using reflected waves, which is received by the ultrasonic testing sensor, from the internal surface of the turbine fork.

Abstract: The present invention provides an eddy current testing method and an eddy current testing apparatus that can reduce detection noise to increase the SN ratio thus improving the defect detection accuracy. An eddy current testing sensor includes a pair of excitation coils and a detection coil disposed therebetween. For example, a voltage regulator applies voltages having different amplitudes to the pair of excitation coils so as to reduce detection noise caused by a deformed portion of a heat exchanger tube and a tube plate in a detection signal of the detection coil. Alternatively, for example, an eddy current testing detector applies a first excitation frequency f1, at which tube material noise is reduced to negligible an amplitude, and a second excitation frequency f2, which is higher than the first excitation frequency f1, to the eddy current testing sensor.

Abstract: To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. Blackening treated iron or iron-based alloy is used as a material of a heat sink 11 having a one-dimensional CCD element 14 mounted thereon. The thermal coefficient of expansion of the heat sink 21 is matched with that of a hollow molded case 12 for integrally molding the heat sink 11 and a lead frame 20. A plurality of projections 21 formed on the side of the hollow molded case 12 are disposed at a bonding interface between the glass cap 13 which closes an upper opening of the hollow molded case 12 and side walls of hollow molded case 12.

Abstract: Disclosed is a semiconductor device comprising a Ge semiconductor area, and an insulating film area, formed in direct contact with the Ge semiconductor area, containing metal, germanium, and oxygen.

Abstract: A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second i

Abstract: The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 ?m, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily separated from the polishing pad surface.