Abstract: The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 um, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily pulled up from the polishing pad surface.

Abstract: An eddy current flaw detection sensor is provided which can detect a circumferential crack occurring at the deformed portion or peripheral portion thereof of a heat transfer tube with a high degree of sensitivity. Two excitation coils 1a, 1b cause eddy current B to flow in the axial direction of a tubular test object 31. A detection coil 2 disposed between the excitation coils 1a, 1b detects bypass eddy current D which flows in the circumferential direction of the test object 31 while bypassing a circumferential crack E. For this purpose, the coil axes of the excitation coils 1a, 1b are directed to the radial direction of the cylindrical protection member 3 and the coil axis of the detection coil 2 is directed to the axial direction of the protection member 3.

Abstract: The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.

Abstract: The present invention provides a semiconductor device including: a semiconductor chip mounted on a substrate; a heat spreader provided above the semiconductor chip; and a sealing resin interposed between the semiconductor chip and the heat spreader and covering the semiconductor chip. The heat spreader is not in contact with any of the substrate and the semiconductor chip, and has an opening.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: A method of connecting hollow conductors with a brazing alloy employs a measuring mechanism 10 for measuring a connecting state of a connecting portion after brazing hollow conductors. The measuring mechanism comprises a scanner 101 and a holder 19, which are separated in advance, so that the mechanism can be installed in a narrow space. A display mechanism 20 displays measuring results as tow-dimensional patterns, and the evaluation mechanism 30 evaluate the connecting portions by an area of the defects and an integral length of sound portions. A judgment mechanism 40 evaluates relative relation of the measuring results with causes-and-defects, which are previously stored, and shows the cause of the defect.

Abstract: A nonvolatile semiconductor memory device includes a gate electrode portion composed of a floating gate electrode formed above a main surface of a semiconductor substrate of a first conductivity type via a tunnel insulating film, an inter-electrode insulating film formed on the floating gate electrode and formed of a stacked structure film of three or more layers formed of two or more types of high-dielectric material, and a control gate electrode formed above the floating gate electrode via the inter-electrode insulating film, and source and drain regions of a second conductivity type which are formed on the main surface of the substrate with the gate electrode portion being arranged between the source and drain regions.

Abstract: An eddy current flaw detection sensor is provided which can detect a circumferential crack occurring at the deformed portion or peripheral portion thereof of a heat transfer tube with a high degree of sensitivity. Two excitation coils 1a, 1b cause eddy current B to flow in the axial direction of a tubular test object 31. A detection coil 2 disposed between the excitation coils 1a, 1b detects bypass eddy current D which flows in the circumferential direction of the test object 31 while bypassing a circumferential crack E. For this purpose, the coil axes of the excitation coils 1a, 1b are directed to the radial direction of the cylindrical protection member 3 and the coil axis of the detection coil 2 is directed to the axial direction of the protection member 3.

Abstract: To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. A resin molded semiconductor device including a heat sink having a support face with a semiconductor chip mounted thereon electrically connected to a lead frame, a resin molded case forms a space for accommodating the semiconductor chip therein, and has an opening on an upper face thereof defined by side walls including a plurality of linearly arrayed resin projections above a top surface portion of the side walls, and molds the lead frame and heat sink, and a glass cap closing the opening and secured to the resin molded case by a bonding agent layer. The case has a thermal coefficient of expansion matched with that of the heat sink, and mechanical stress between the case and the cap is absorbed by the bonding agent layer having a thickness greater that the height of the linearly arrayed resin projections above the top surface portion of the side walls.

Abstract: An eddy current testing probe has a flexible substrate adapted to face to a surface of a test article, a plurality of coils which are fixed to the flexible substrate and energized one of which is capable of being changed sequentially, a pressing member for pressing the substrate toward the test article, an elastic member arranged between the substrate and the pressing member, and a movement limiting member for limiting a movement of the pressing member toward the test article.

Abstract: A graphite spheroidizing agent capable of spheroidizing graphite while preventing formation of chunky graphite is provided. The graphite spheroidizing agent of the present invention comprising silicon, magnesium, calcium and rare earth elements, wherein the graphite spheroidizing agent contains rare earth elements of 0.6 to 3.0 mass % and a calcium content of 1.3 to 4.0 mass %, respectively, relative to the total amount thereof, and a percentage of lanthanum in the rare earth elements is 50 mass % or more.

Abstract: A liquid ejection device includes: a liquid ejection head which includes an ejection surface and an ejection port formed at the ejection surface, ejects a droplet of liquid from the ejection port, and allows the liquid to land on an object; an elastic absorbing member which comes into contact with the ejection surface of the liquid ejection head, and absorbs the liquid adhering to the ejection surface; and moving means for moving the absorbing member with respect to the ejection surface while the absorbing member is in contact with the ejection surface, in which the absorbing member has a surface layer which is impregnated with a solution containing a surfactant.

Abstract: A nondestructive inspection apparatus using a guided wave having waveform forming part that form a transmission waveform; a transmitting element for generating a guided wave within an object under inspection; a receiving element for receiving a reflection wave of the guided wave from an inspection region of the object under inspection; an analyzing element for outputting inspection information which is acquired based upon the reception waveform of the reflection wave received by the receiving element; and a display for displaying the inspection information.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

Abstract: In order to make it possible in ultrasonic flaw detection to generate ultrasonic waves containing a main beam only by use of an array probe and clearly identify a defect in a specimen by use of images, an element pitch P (the distance between centers of adjacent ultrasonic transducer elements in the array probe) is set longer than ¼ of the wavelength of longitudinal waves generated by the ultrasonic transducer elements and shorter than ½ of the wavelength and reception signals up to time corresponding to the sum of wall thickness round-trip propagation time for longitudinal waves and wall thickness round-trip propagation time for shear waves in the specimen are displayed.

Abstract: An eddy current testing probe has a flexible substrate adapted to face to a surface of a test article, a plurality of coils which are fixed to the flexible substrate and energized one of which is capable of being changed sequentially, a pressing member for pressing the substrate toward the test article, an elastic member arranged between the substrate and the pressing member, and a movement limiting member for limiting a movement of the pressing member toward the test article.

Abstract: A method of connecting hollow conductors with a brazing alloy employs a measuring mechanism 10 for measuring a connecting state of a connecting portion after brazing hollow conductors. The measuring mechanism comprises a scanner 101 and a holder 19, which are separated in advance, so that the mechanism can be installed in a narrow space. A display mechanism 20 displays measuring results as tow-dimensional patterns, and the evaluation mechanism 30 evaluate the connecting portions by an area of the defects and an integral length of sound portions. A judgment mechanism 40 evaluates relative relation of the measuring results with causes-and-defects, which are previously stored, and shows the cause of the defect.