Abstract: A semiconductor power module is configured in such a way that a protruding portion of a heat sink is inserted into a penetration hole of a jacket, that an end face portion of the protruding portion and a cooling fin are exposed in a flow path, that a front-end portion of the cooling fin abuts on an inner wall surface of the flow path, that a packing is mounted in a groove portion formed between an inner wall portion of the penetration hole and a side wall portion, of the protruding portion of the heat sink, that faces the inner wall portion, that the inner wall portion of the penetration hole and the side wall portion of the protruding portion press the packing in the radial direction thereof, that a spring member presses the front-end portion of the cooling fin to the inner wall surface of the flow path.

Abstract: A multiplexer includes a common terminal, a first reception output terminal, a second reception output terminal, a first filter that is connected between the common terminal and the first reception output terminal, a second filter that is connected between the common terminal and the second reception output terminal and that has a passband different from that of the first filter, and an impedance matching circuit that is disposed between the common terminal and the second filter. The impedance matching circuit includes a serial arm resonator disposed in series on a path connecting the common terminal to the second filter.

Abstract: A multiplexer (1) includes: a filter (13L) that is arranged between a common terminal (100) and an input/output terminal (130) and that has a first pass band; a filter (12H) that is arranged between the common terminal (100) and an input/output terminal (120), that is formed of at least one acoustic wave resonator, and that has a second pass band located at a higher frequency than the first pass band; and a capacitor (C2) that is serially arranged on a connection path between the common terminal (100) and the filter (12H). When the filter (12H) is regarded as a capacitance, the Q value of the capacitor (C2) in the first pass band is higher than the Q value of the capacitance in the first pass band.

Abstract: This power conversion device includes: a power module unit; and a capacitor module including a capacitor element, and a capacitor busbar. The capacitor busbar has a flat-plate portion, a plurality of power terminal connection portions, a power supply connection portion, and a plurality of element connection portions. An element-connection-portion position range which is a position range in a first direction between two element connection portions located at both ends, and a power-terminal-connection-portion position range which is a position range in the first direction between two power terminal connection portions located at both ends, are within a position range in the first direction where the flat-plate portion is located. A length of the element-connection-portion position range and a length of the power-terminal-connection-portion position range are equivalent to each other.

Abstract: It provides an operation part calculating an energy recovered by the heat exchanger in the heat exchanger and energies consumed by the air blower for absorption and the air blower for discharge and determining which of the energy recovered by the heat exchange and the energies consumed by the air blower for absorption and the air blower for discharge is greater, and a control part controlling at least one of the air blower for absorption and the air blower for discharge so that the energy consumed by the air blower for absorption and the air blower for discharge becomes small when the operation part determines that the energy consumed by the air blower for absorption and the air blower for discharge is greater than the energy recovered by the heat exchanger.

Abstract: A radio-frequency module includes a mounting substrate having a first main surface; a first power amplifier that is mounted on the first main surface and that amplifies a first transmission signal in a first frequency band; a second power amplifier that is mounted on the first main surface and that amplifies a second transmission signal in a second frequency band different from the first frequency band; a first output matching circuit that is mounted on the first main surface and that receives the first transmission signal amplified by the first power amplifier; and a second output matching circuit that is mounted on the first main surface and that receives the second transmission signal amplified by the second power amplifier. The first output matching circuit and the second output matching circuit are mounted along a second direction intersecting with the first direction.

Abstract: Filters 10 and 20 having respective pass bands different from each other, a common terminal to which a terminal 11 of the filter 10 and a terminal of the filter 20 are connected, and an inductor of which one end is connected to the terminal 11 and another end is connected to the common terminal. The filter 10 includes a longitudinally coupled resonator formed of a resonator 132 and resonators 131 and 133 disposed on both sides of the resonator 132, in which the resonator 132 is connected to the terminal 11, and a parallel resonator of which one end is connected to the resonator 132 and another end is connected to a ground electrode, and the resonator 132 and the parallel resonator of the resonators included in the filter 10 are connected to a signal path between the resonator 132 and the terminal 11.

Abstract: An object is to provide a power conversion device that enables a capacitor element to be efficiently cooled, thus suppressing deterioration of the capacitor element due to heat. The power conversion device includes: a power module including a module body portion storing a semiconductor element, and a power terminal protruding from the module body portion; a capacitor module including a capacitor body portion storing a capacitor element, and a capacitor busbar protruding from the capacitor body portion and connected to the power terminal; and a housing storing the power module and the capacitor module. The housing has a first surface to which the power module is thermally connected, and a second surface to which the capacitor module is thermally connected. A coolant path for cooling the first surface is provided on a back side of the first surface. The capacitor busbar is thermally connected to the first surface.

Abstract: An object of the present disclosure is to suppress variation in currents flowing through semiconductor elements and thereby to achieve size reduction of the semiconductor elements. The semiconductor power module includes electrode terminals for connecting a first electrode to a first external electric component, a second electrode joined to upper surfaces of a plurality of semiconductor elements, and a second electrode extension portion for connecting the second electrode to a second external electric component. The sum of a current path length from the electrode terminal to the semiconductor element in the first electrode and a current path length from the semiconductor element to a second electrode terminal portion in the second electrode, is set to be the same among the plurality of semiconductor elements.

Abstract: A semiconductor device includes a plurality of arms each including: a heat dissipation plate; a switching element; a metal terminal; and a sealing material, the metal terminals of the two specific arms adjacent to each other in the first direction has a first protruding portion which protrudes from a portion of the sealing material on one side in the second direction, the first protruding portion of one specific arm is arranged on a side closer to the other specific arm than a center portion in the first direction is, at the portion of the sealing material on the one side in the second direction, and the first protruding portion of the other specific arm is arranged on a side closer to the one specific arm than a center portion in the first direction is, at the portion of the sealing material on the one side in the second direction.

Abstract: In this power semiconductor module, a first lead frame and a second lead frame through which currents flow in opposite directions are arranged so as to overlap each other, whereby the internal inductance can be reduced. In a direction perpendicular to one main surface of a first metal wiring layer, each of the first lead frame and the second lead frame is provided so as not to overlap parts of end surfaces of the first metal wiring layer and a second metal wiring layer. Thus, in a manufacturing process for the power semiconductor module before sealing with sealing resin, it is possible to easily perform positioning between the lead frames and between the metal wiring layer and the lead frame, using the end surfaces, whereby the manufacturing process can be simplified.

Abstract: The semiconductor device includes: a heat spreader; a plurality of semiconductor elements; and one or a plurality of temperature detection elements. If a line segment connecting centers of two respective adjacent ones of the semiconductor elements is defined as X, a straight line that passes through one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y1, and a straight line that passes through another one of the centers of the two adjacent semiconductor elements and that is perpendicular to X and parallel to the one-side surface of the heat spreader is defined as Y2, at least a part of the temperature detection element is located in an arrangement region interposed between Y1 and Y2, as seen in a direction perpendicular to the one-side surface of the heat spreader.

Abstract: In the application, since the flow of air outside the vehicle compartment flowing through the upstream heat exchange part and the flow of air outside the vehicle compartment flowing through the downstream heat exchange part are opposite flows, a second heat exchanger through which the air outside the vehicle compartment flowing from the first fan through the downstream heat exchange part flows, a first heat exchanger is an orthogonal heat exchanger, the second heat exchanger that is a component of a refrigeration cycle execution system, the air in the vehicle compartment, which flows in from the inside air inlet by the rotation of the second fan and is discharged from the outlet outside the vehicle through the first heat exchanger, and the air outside the vehicle compartment, are exchanged with the first heat exchanger, it can be miniaturized along with the improvement of electricity cost.

Abstract: Filter characteristics of a first filter are improved while suppressing degradation in filter characteristics of a second filter. A multiplexer includes a first terminal, a second terminal, a first filter, a second filter, and a capacitive element. The first filter and the second filter are connected to an antenna via the first terminal. The first filter includes a plurality of series arm resonators, a plurality of parallel arm resonators, and an inductor. The inductor is provided between the parallel arm resonator and ground. A first end portion of the capacitive element is connected to a first path at a position in between the series arm resonator that is the closest to the first terminal and the second terminal. A second end portion of the capacitive element is connected between the parallel arm resonator and the inductor.

Abstract: A multiplexer (1) includes: a filter (13L) that is arranged between a common terminal (100) and an input/output terminal (130) and that has a first pass band; a filter (12H) that is arranged between the common terminal (100) and an input/output terminal (120), that is formed of at least one acoustic wave resonator, and that has a second pass band located at a higher frequency than the first pass band; and a capacitor (C2) that is serially arranged on a connection path between the common terminal (100) and the filter (12H). When the filter (12H) is regarded as a capacitance, the Q value of the capacitor (C2) in the first pass band is higher than the Q value of the capacitance in the first pass band.

Abstract: A semiconductor power module is configured in such a way that a protruding portion of a heat sink is inserted into a penetration hole of a jacket, that an end face portion of the protruding portion and a cooling fin are exposed in a flow path, that a front-end portion of the cooling fin abuts on an inner wall surface of the flow path, that a packing is mounted in a groove portion formed between an inner wall portion of the penetration hole and a side wall portion, of the protruding portion of the heat sink, that faces the inner wall portion, that the inner wall portion of the penetration hole and the side wall portion of the protruding portion press the packing in the radial direction thereof, that a spring member presses the front-end portion of the cooling fin to the inner wall surface of the flow path.

Abstract: A multiplexer includes a common terminal, a first acoustic wave filter having a first frequency band as a pass band, and having a first input/output terminal connected to the common terminal, a second acoustic wave filter having a second frequency band higher than the first frequency band as a pass band, and having a second input/output terminal connected to the common terminal, an inductance element, and a first capacitance element. The first acoustic wave filter has a parallel resonator of which one end is connected to the first input/output terminal and another end is connected to a ground electrode, and the first input/output terminal is connected to the common terminal via the inductance element, and the first capacitance element is connected between a signal path between the one end of the parallel resonator and the inductance element, and a ground electrode.

Abstract: In a radio-frequency circuit, a first switch is connected to an antenna terminal. A second switch is connected to the first switch and is connected to the antenna terminal via the first switch. A first filter is connected to the first switch without having the second switch interposed therebetween and allows a radio-frequency signal of a first communication band to pass through the first filter. A second filter is connected to the first switch via the second switch and allows a radio-frequency signal of a second communication band to pass through the second filter. The second communication band is higher than the first communication band. The radio-frequency circuit further includes an inductor. The inductor is not connected in series with the first filter and is connected in series with the first switch and the second switch between the first switch and the second switch.

Abstract: In a radio-frequency circuit, a first switch is connected to an antenna terminal. A second switch is connected to the antenna terminal via the first switch. A first filter is an acoustic wave filter that is connected to the first switch via the second switch and that allows a radio-frequency signal of a first communication band to pass through the first filter. A second filter is an acoustic wave filter that is connected to the first switch without necessarily having the second switch interposed therebetween and that allows a radio-frequency signal of a second communication band to pass through the second filter. The second communication band is higher than the first communication band. The radio-frequency circuit further includes a capacitor. The capacitor is connected in series with the first switch and the second switch between the first switch and the second switch.

Abstract: A manufacturing method for a power module capable of shortening a manufacturing time for a power module is obtained. The manufacturing method for a power module includes: a subassembly arranging step of placing a subassembly including a first electrode, a semiconductor device, and a second electrode on a heat sink via a joining material; and a transfer molding step of, after the subassembly arranging step, under a state in which the first electrode, the semiconductor device, and a second-electrode inner portion are arranged in a region surrounded by the heat sink and a molding die, injecting a thermoplastic resin into the region, wherein, in the transfer molding step, the subassembly is joined to the heat sink via the joining material with use of the resin.