Abstract: A heat transport device includes an evaporator, a condenser, and a vapor channel and a plurality of liquid channels that connect the evaporator and the condenser. The evaporator generates a capillary force to circulate working fluid. This structure prevents the performance deterioration and malfunction due to the entry of vapor-phase working fluid into the liquid channels. Since the cross-sectional areas of the liquid channels gradually decrease from the condenser toward the evaporator, the capillary force at the liquid channels can be increased, and vapor-phase working fluid is prevented from entering the liquid channels. Wicks and the portions of the liquid channels adjacent thereto are filled with liquid-phase working fluid even after dryout occurs, stable operation is achieved.

Abstract: An assistive music playing apparatus is provided for playing a music piece with musically acceptable notes even when the player inputs musically unacceptable notes. The apparatus provides a chord progression pattern, and comprises a note conversion device. A chord progression pattern defines a series of chords, which are presented one after another in time for a music progression. As the player plays music, inputting potentially unacceptable notes, the inputted notes will be converted to musically acceptable notes with reference to the currently presented chord in the chord progression. The note conversion rules are prepared different for a melody note range, a chord note range and a bass note range. Overlap of converted notes are avoided. Depending on the conditions of the player's note input, i.e.

Abstract: When a through hole like a pass-through trench is to be made by etching an object to be etched from one of its major surfaces by reactive ion etching or other dry etching, for the purpose of preventing undesirable enlargement of the through hole in size at its terminal end, dry etching is conducted by previously providing a conductor with a higher electric conductivity than the entity in contact with the other surface of the entity in or near the portion for making the through hole. For example, the entity to be etched may be a semiconductor such as Si substrate, and the conductor may be a metal film such as Al film.

Abstract: The present invention provides a thermal transport apparatus capable of easily forming a wick, stably circulating a working fluid in the thermal transport apparatus and achieving a high efficiency of thermal transport, and a method for manufacturing the thermal transport apparatus. The liquid working fluid flowing through a liquid-phase path toward an evaporator wick communicating hole permeates into micro holes formed between grains which fill in the evaporator wick communicating hole, and flows into a wick of an evaporator. A vapor of the working fluid evaporating in the evaporator passes through a vapor-phase path and flows into a condenser through a condenser wick communicating hole. In the condenser, the working fluid is again liquefied. The liquefied working fluid flows through the liquid-phase path from the condenser to the evaporator wick communicating hole.

Abstract: In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space.

Abstract: An information visualization system allows carrying out a three-dimensional walk through and hyperlink operation with little processing and allows automatically incorporating modifications into the image. A partial image generating device that forms the information visualization system generates a walk through image from three-dimensional space shape information and walk through path information, and converts same into a plurality of partial images that are partitioned at branching points. A branching information generating device generates branching information for the partial images. A hyperlink information generating device generates hyperlink information based on the visualized object information in the three-dimensional space. A partial image selection device sends a partial image switching instruction in order to switch partial images depending on the path selection of the user.

Abstract: In a micro mirror apparatus pivoting on a hinge part as its axis, a movable part connected to a stationary part through the hinge part enhances exclusively the flexural rigidity of the hinge part without causing any significant change in the torsional rigidity of the hinge part and thus widens servo band. To this end, on at least a part of the hinge part 14, a protrusion 14b protruding in the direction of its thickness is formed. This greatly increases the flexural rigidity of the hinge part 14 and widens the servo band.

Abstract: To provide a small and lightweight optical switching element with a simple structure capable of fast response, and an optical switching apparatus employing the optical switching element. Optical extraction unit contacts an upper substrate with electrostatic attraction generated between a transparent electrode of the optical extraction unit and a transparent electrode of the upper substrate. In the case that light enters one V-shaped trench of the upper substrate vertically, the light enters the optical extraction unit of the upper substrate and is emitted from a back of the optical extraction unit (a tapered unit). Subsequently, the incident light P1 passes through a lower substrate and is converted into transmission light. With electrostatic attraction generated between a transparent electrode of the lower substrate and a transparent electrode of the optical extraction unit, the optical extraction unit is attracted to a lower substrate side.

Abstract: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Abstract: A micro-mirror for deflecting an incident light is disclosed, wherein the micro-mirror comprises: a mirror section for reflecting an incident light issued from a laser diode; a hinge section including a fixed section and a movable section each having a flat surface; and a drive section having a bi-morph structure made of two or more of materials having different heat expansion coefficient for deflecting said mirror section to change relative angle to said incident light.

Abstract: A multilayer resist structure is irradiated more than one time with ultraviolet rays through a photomask. Each time the structure is irradiated, ultraviolet rays of a little greater quantity of light than those used in the last irradiation are used. Also, with each exposure, a photomask which has a larger lightproof section than that used in the last irradiation is used. Next, the multilayer resist structure is developed, and the exposed area of each photoresist is removed with a developing solution. Also, in amorphous silicon layers, the areas under the removed photoresist are easily removed with the developing solution. A resist structure having desired steps is thus completed. Using the resist structure, a three-dimensional microstructure can be formed.

Abstract: In a network performance system involving a plurality of performance apparatuses, each performance apparatus stores phrase performance information of a plurality of performance parts, and each performance apparatus is allocated with one of the performance parts to conduct an ensemble performance composed of the plurality of the performance parts. A server apparatus is connected to each of the performance apparatuses via a network. Each of the performance apparatuses is manually operable to input operational information relating to the performance part allocated thereto, and transmits the inputted operational information to the server apparatus via the network. The server apparatus delivers the operational information transmitted by each of the performance apparatuses to other of the performance apparatuses via the network.

Abstract: In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space.

Abstract: In a method for manufacturing an insulating film using a fluid source material without inviting corrosion of metal wiring or the problem of poisoned via, after making a SiO2 film as a base layer on an Si substrate defining an uneven surface with an Al alloy wiring by plasma CVD using SiH4 and N2O, and further making an inter-layer insualting film having a fluidity on the SiO2 film by low pressure CVD using SiH4 or organosilane and H2O2, O2 plasma processing is applied to the inter-layer insulating film. After that, a SiO2 film as a cap layer is made on the inter-layer insulating film by plasma CVD using SiH4 and N2O. Rapid thermal annealing using lamp heating or O3 annealing may be done in lieu of O2 plasma processing.

Abstract: To offer a microstructure fabrication apparatus capable of realizing MEMS and a Rugate Filter excellent in performance characteristics by patterning a thick functional material film in high aspect ratio with a simple and practical manufacturing method. A Si layer is employed for a mask pattern. The advantages of the Si layer are withstood a process conducted at high temperature for forming a PZT layer, which is the functional material layer, patterned in high aspect ratio, and achieves excellent process consistency for the whole manufacturing processes of the microfabrication. A trench or a gap is formed with the mask pattern deeper than the desired PZT layer. The PZT layer, or functional material layer (films) is formed on the whole surface including the bottom of the concave part of the mask pattern. The PZT layer deposited on the mask pattern is removed with the mask pattern itself, and selectively remains the pattern of the PZT layer, thereby obtaining a pattern of the desired functional material layer.

Abstract: Disclosed is a solid activated carbon and a process for manufacturing the solid activated carbon which is particularly suitable for electrode materials used in an electric double layer capacitor and various batteries. The use of the solid activated carbon makes it possible to prepare an activated carbon substrate having high mechanical strength and practical capacitance while the content of activated carbon is high. The solid activated carbon comprises an activated carbon powder and/or an activated carbon fiber, a carburized substance of a PVA or a resin derived from PVA, and a PVA or a resin derived from PVA. The process for manufacturing the solid activated carbon comprises, molding a molding material consisting of an activated carbon powder and/or an activated carbon fiber, a PVA or a resin derived from PVA or a mixture of a PVA or a resin derived from PVA and a mesophase using a known molding method, aging the molded compact in air and heat-treating the aged compact in a non-oxidizing atmosphere.

Abstract: To offer a microstructure fabrication apparatus capable of realizing MEMS and a Rugate Filter excellent in performance characteristics by patterning a thick functional material film in high aspect ratio with a simple and practical manufacturing method. A Si layer is employed for a mask pattern. The advantages of the Si layer are withstood a process conducted at high temperature for forming a PZT layer, which is the functional material layer, patterned in high aspect ratio, and achieves excellent process consistency for the whole manufacturing processes of the microfabrication. A trench or a gap is formed with the mask pattern deeper than the desired PZT layer. The PZT layer, or functional material layer (films) is formed on the whole surface including the bottom of the concave part of the mask pattern. The PZT layer deposited on the mask pattern is removed with the mask pattern itself, and selectively remains the pattern of the PZT layer, thereby obtaining a pattern of the desired functional material layer.

Abstract: To provide a small and lightweight optical switching element with a simple structure capable of fast response, and an optical switching apparatus employing the optical switching element. Optical extraction unit contacts an upper substrate with electrostatic attraction generated between a transparent electrode of the optical extraction unit and a transparent electrode of the upper substrate. In the case that light enters one V-shaped trench of the upper substrate vertically, the light enters the optical extraction unit of the upper substrate and is emitted from a back of the optical extraction unit (a tapered unit). Subsequently, the incident light P1 passes through a lower substrate and is converted into transmission light. With electrostatic attraction generated between a transparent electrode of the lower substrate and a transparent electrode of the optical extraction unit, the optical extraction unit is attracted to a lower substrate side.

Abstract: In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space.

Abstract: In a method for manufacturing an insulating film using a fluid source material without inviting corrosion of metal wiring or the problem of poisoned via, after making a SiO2 film as a base layer on an Si substrate defining an uneven surface with an Al alloy wiring by plasma CVD using SiH4 and N2O, and further making an inter-layer insualting film having a fluidity on the SiO2 film by low pressure CVD using SiH4 or organosilane and H2O2, O2 plasma processing is applied to the inter-layer insulating film. After that, a SiO2 film as a cap layer is made on the inter-layer insulating film by plasma CVD using SiH4 and N2O. Rapid thermal annealing using lamp heating or O3 annealing may be done in lieu of O2 plasma processing.