Abstract: A process for pattern forming during semiconductor manufacturing comprises the steps of forming a resist pattern on a substrate, then a metallic layer, of aluminum for example, is applied to the complete surface of the substrate and the resist pattern, by spattering or the like. Next a heating step is carried out. The heating step is accomplished by immersing the resist pattern in a solvent heated in the vicinity of a boiling point thereof, for effecting expansion of the resist pattern. Then the resist pattern is removed along with undesired remnants of the metallic layer which are adhered to the resist pattern.

Abstract: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Abstract: When a through hole like a pass-through trench is to be made by etching an object to be etched from one of its major surfaces by reactive ion etching or other dry etching, for the purpose of preventing undesirable enlargement of the through hole in size at its terminal end, dry etching is conducted by previously providing a conductor with a higher electric conductivity than the entity in contact with the other surface of the entity in or near the portion for making the through hole. For example, the entity to be etched may be a semiconductor such as Si substrate, and the conductor may be a metal film such as Al film.

Abstract: A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Abstract: The hinge (13) should preferably be formed to have a higher resistance than ever against the pivoting of the mirror body (12) to effectively prevent the hinge (13) from being damaged. By adopting a suitable one of a variety of production steps as necessary, the hinge (13) can be formed more finely and with a higher precision and thus the micro mirror unit can be produced more easily in a shorter time. To this end, the hinge (13) is formed from a different material, such as SiNx, from the mirror substrate material from which the frame (11) and mirror body (12) are formed.

Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.

Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material. In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns. In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.

Abstract: A music apparatus is communicable with a supervisory computer through a network for remotely training a user in matching with a skill level. In the music apparatus, an instrument is manually operable by the user for generating a performance. A monitor displays a lesson score in matching with the skill level so that the user is prompted to render the displayed lesson score by operating the instrument for generating a sample performance. A processor compares event data representative of the sample performance with note data representative of the lesson score to locally execute a quantitative evaluation of the sample performance. A transmitter transmits the event data representative of the sample performance to the supervisory computer through the network so that the supervisory computer can work to remotely provide a qualitative evaluation of the sample performance according to the event data to thereby arrange instruction data.

Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.In the first aspect of the method, a portion of the interlayer film is at first deposited so as to have relatively reduced fluidity, so that the film is formed with an almost uniform thickness regardless of any pattern width on the substrate. After this, the rest portion of the film is deposited so that it has relatively increased fluidity so as to fill up the trough between the patterns.In the second aspect of the method, an undercoating film is formed in advance which is then treated to be hydrophobic so that a portion of the interlayer film deposited thereon reduces its fluidity, by which the portion is uniformly deposited regardless of any pattern width.

Abstract: To provide an information visualizing system for presenting information of items to a user flexibly and automatically according to user's manipulation to control a virtual space, the information visualizing includes a target object indicator (22) for designating certain of visual object displayed in the virtual space as target objects whereof positional relation to a target indication object displayed in the virtual space satisfies a certain condition; a related-information generator (23 and 24) for generating related-information to be displayed in connection to the target objects according to relational condition designated by the user by processing information concerning the target objects; a target object revisor (26) for controlling the target object indicator to update the target objects automatically at appropriate intervals according to the situation of the virtual space; and a related-information (27) revisor for controlling the related-information generator (23 and 24) to update the related-informati

Abstract: A fully computerized musical performance teaching system comprises a computer apparatus having a keyboard and a display and is connectable to an electronic musical instrument. An application program provides the computer with various functions such as of judging student's skills, selecting music pieces for practice, training the student in performance and evaluating the student's progress through the teaching course. The judging function is to judge the student's performance skill from the student's responses to the subjects which the computer presents. The selecting function is to select a piece of music for practice according to the judgment results and the student's wishes and also to select a tutoring manner from among several prepared manners. The training function is to plan a practice schedule to meet the student's performance skill and wishes and to let the student practice with proper music pieces.

Abstract: An apparatus for using a computer keyboard as a musical instrument keyboard, the apparatus having: a computer keyboard having a plurality of keys for generating key information upon operation of each key; a unit for switching between an enable state and a disabled state of a musical instrument keyboard function; and a MIDI data generating unit for generating MIDI data corresponding to the key information upon operation of each key of the computer keyboard if the musical instrument keyboard function is in the enabled state.

Abstract: A method of forming an interlayer film on a substrate with a plurality of patterns formed thereon wherein the interlayer film is deposited on the substrate by a process comprising a plurality of steps in each of which a portion of the film is deposited so as to have different fluidity with the same source material.

Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

Abstract: A method of forming an interlayer film on a substrate with a plurality of wiring patterns is provided. The interlayer film is deposited on the substrate in a multi step process. A portion of the interlayer film is first deposited in a layer having relatively reduced fluidity so that the film is formed with an almost uniform thickness regardless of any pattern width present on a substrate. Thereafter, a second portion or layer of the intelayer film is deposited in a layer having relatively increased fluidity so that the second layer material fills up any troughs formed between wiring patterns. In a preferred embodiment, an undercoating film may be formed in advance which is then rendered hydrophobic so that the first portion of the interlayer film deposited thereon has reduced fluidity such that the first portion is uniformly deposited regardless of any pattern width.

Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

Abstract: A method and an apparatus for fabricating a thin film semiconductor device are disclosed. An a-Si:H thin film produced on a wafer is melting-recrystallized by irradiating a laser beam to it in a laser annealing chamber to produce a polycrystalline Si thin film. The wafer is then transported to a CVD chamber without exposing it to the outside air. A gate insulating film is produced on a clean surface of the polycrystalline Si thin film in the CVD chamber. In another case, an a-Si:H thin film is melting-recrystallized in the laser annealing chamber to produce a polycrystalline Si thin film and then the wafer is transported to a hydrogenating chamber without exposing it to the outside air. Thereafter the polycrystalline Si thin film is plasma hydrogenated in the hydrogenating chamber.

Abstract: The present invention is directed to a thin film transistor (TFT) structure having a channel region formed of a crystallized SiGe and is to provide a thin film transistor having a large carrier mobility. In this case, a channel region (4) is formed of a crystallized SiGe thin film.

Abstract: A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.