Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.

Abstract: A method of manufacturing a semiconductor device disclosed herein includes: mounting a substrate on an electrostatic chuck placed inside a chamber, the electrostatic chuck having a first temperature and the substrate being retained in advance in an atmosphere having a second temperature lower than the first temperature; fixing the substrate onto the electrostatic chuck by applying a voltage to the electrostatic chuck; heating the electrostatic chuck to a third temperature higher than the first temperature and the second temperature after mounting the substrate; and processing the substrate after the heating.

Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.

Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.

Abstract: A semiconductor device production method includes: forming a protection film on a semiconductor substrate; forming a first resist pattern on the protection film; implanting a first impurity ion into the semiconductor substrate using the first resist pattern as a mask; removing the first resist pattern; forming on the surface of the semiconductor substrate a chemical reaction layer that takes in surface atoms from the semiconductor substrate through chemical reaction, after the removing of the first resist pattern; removing the chemical reaction layer formed on the semiconductor substrate and removing the surface of the semiconductor substrate, after the forming of the chemical reaction layer; and growing a semiconductor layer epitaxially on the surface of the semiconductor substrate, after the removing of the surface of the semiconductor substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a first insulating film above a semiconductor substrate, patterning the first insulating film to form a first and a second opening, forming a first sidewall film on side walls of the first and the second openings, etching the semiconductor substrate with the first insulating film and the first sidewall film as a mask to dig down the first opening and the second opening, removing the first sidewall film to form a first offset portion in the first opening and a second offset portion in the second opening, the first and the second offset portion including a part of a surface of the semiconductor substrate, and etching a bottom of the first opening with the first insulating film as a mask.

Abstract: A method of manufacturing a semiconductor device disclosed herein includes: mounting a substrate on an electrostatic chuck placed inside a chamber, the electrostatic chuck having a first temperature and the substrate being retained in advance in an atmosphere having a second temperature lower than the first temperature; fixing the substrate onto the electrostatic chuck by applying a voltage to the electrostatic chuck; heating the electrostatic chuck to a third temperature higher than the first temperature and the second temperature after mounting the substrate; and processing the substrate after the heating.

Abstract: A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.

Abstract: A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

Abstract: A semiconductor device formed in a semiconductor substrate wherein the semiconductor substrate has a trench for isolating elements from each other, the trench has unevenness at the bottom thereof, and an insulator is buried in the trench.

Abstract: A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a trench on a semiconductor substrate to define a first and a second element regions; burying a first oxide film in the trench; forming a second oxide film on surfaces of the first and second element regions; performing a first ion doping using a first mask which is exposing a first region containing the first element region and a part of the first oxide; performing a second ion doping using a second mask which is exposing a second region containing the second element region and a part of the first oxide film; and removing the second oxide film formed in the first element region and the second element region by etching, and the first oxide film is selectively thinned using the first or second mask after performing the first or second ion doping.

Abstract: A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a trench on a semiconductor substrate to define a first and a second element regions; burying a first oxide film in the trench; forming a second oxide film on surfaces of the first and second element regions; performing a first ion doping using a first mask which is exposing a first region containing the first element region and a part of the first oxide; performing a second ion doping using a second mask which is exposing a second region containing the second element region and a part of the first oxide film; and removing the second oxide film formed in the first element region and the second element region by etching, and the first oxide film is selectively thinned using the first or second mask after performing the first or second ion doping.

Abstract: A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.

Abstract: A semiconductor device fabrication method is disclosed. The method comprises an insulating film forming step of forming an insulating film on a semiconductor substrate; a trench forming step of forming a trench for device isolation in a predetermined part of the semiconductor substrate; a trench filling step of forming a buried oxide film filling the trench; a polishing step of polishing the buried oxide film on the semiconductor substrate until the insulating film is exposed; a thickness measuring step of measuring the thickness of the insulating film remaining after the polishing; an etching amount determining step of determining an etching amount of etching the polished buried oxide film based on the measured thickness of the remaining insulating film; and a buried oxide film etching step of etching the polished buried oxide film based on the determined etching amount.

Abstract: A method for manufacturing a semiconductor device that controls the influence of a thickness of a stopper film even if there is a change in the thickness of the stopper film by measuring the thickness prior to etching to a predetermined thickness.

Abstract: A trench is formed in a surface layer of a semiconductor substrate, the trench surrounding an active region. A lower insulating film made of insulating material is deposited over the semiconductor device, the lower insulating film filling a lower region of the trench and leaving an empty space in an upper region. An upper insulating film made of insulating material having therein a tensile stress is deposited on the lower insulating film, the upper insulating film filling the empty space left in the upper space. The upper insulating film and the lower insulating film deposited over the semiconductor substrate other than in the trench are removed.

Abstract: A trench is formed in the surface layer of a semiconductor substrate, surrounding an active region. A lower insulating film made of insulating material fills a lower region of the trench. An upper insulating film fills a region of the trench above the lower insulating film. The upper insulating film has therein a stress generating tensile strain in a surface layer of the active region.

Abstract: A method for manufacturing a semiconductor device includes forming a silicon substrate having first and second surfaces, the silicon substrate including no oxide film or an oxide film having a thickness no greater than 100 nm, forming a first oxide film at least on the second surface of the silicon substrate, forming a first film by covering at least the first surface, forming a mask pattern on the first surface by patterning the first film, forming a device separating region on the first surface by using the mask pattern as a mask, forming a gate insulating film on the first surface, forming a gate electrode on the first surface via the gate insulating film, forming a source and a drain one on each side of the gate electrode, and forming a wiring layer on the silicon substrate while maintaining the first oxide film on the second surface.