Abstract: The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12, and a silicon nitride film 14 having a width smaller than a width of the silicon oxide film 12; etching the silicon substrate 10 with the hard mask 20 as the mask to form a trench 26 for defining an active region 24 in the silicon substrate 10; and forming a silicon oxide film 28 on the silicon substrate 10 with the trench 26 formed in.

Abstract: A method for manufacturing a semiconductor device that controls the influence of a thickness of a stopper film even if there is a change in the thickness of the stopper film by measuring the thickness prior to etching to a predetermined thickness.

Abstract: After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter, a polysilicon film is formed above the Si substrate. Subsequently, a resist film is formed on the polysilicon film. Next, a circuit pattern for a semiconductor integrated circuit, a second L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. At this time, the second L-shaped length measuring pattern is made to face in a direction in which the first L-shaped length measuring pattern is rotated 180 degrees in plane view. By patterning the polysilicon film with these patterns as a mask, a gate electrode is formed.

Abstract: A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation region that isolates the device region. The shallow trench isolation region includes a trench, a nitride film liner disposed at an upper portion of a side wall of the trench, and a thermal oxide film disposed at a lower portion of the side wall of the trench. The shallow trench isolation is arranged such that the width of a second portion of the shallow trench isolation region at which the thermal oxide film is disposed may be wider than the width of a first portion of the shallow trench isolation region at which the lower end of the nitride film liner is disposed.

Abstract: The method of manufacturing a semiconductor device has deciding an amount of a correction of a mask pattern for a size of an active region of a semiconductor substrate, correcting the mask pattern on the basis of the decided amount of the correction, and exposing a resist film by using an exposure mask having the corrected mask pattern.

Abstract: A semiconductor device formed in a semiconductor substrate wherein the semiconductor substrate has a trench for isolating elements from each other, the trench has unevenness at the bottom thereof, and an insulator is buried in the trench.

Abstract: A method of manufacturing a semiconductor device includes the steps of forming a trench on a semiconductor substrate to define a first and a second element regions; burying a first oxide film in the trench; forming a second oxide film on surfaces of the first and second element regions; performing a first ion doping using a first mask which is exposing a first region containing the first element region and a part of the first oxide; performing a second ion doping using a second mask which is exposing a second region containing the second element region and a part of the first oxide film; and removing the second oxide film formed in the first element region and the second element region by etching, and the first oxide film is selectively thinned using the first or second mask after performing the first or second ion doping.

Abstract: A semiconductor device fabrication method is disclosed. The method comprises an insulating film forming step of forming an insulating film on a semiconductor substrate; a trench forming step of forming a trench for device isolation in a predetermined part of the semiconductor substrate; a trench filling step of forming a buried oxide film filling the trench; a polishing step of polishing the buried oxide film on the semiconductor substrate until the insulating film is exposed; a thickness measuring step of measuring the thickness of the insulating film remaining after the polishing; an etching amount determining step of determining an etching amount of etching the polished buried oxide film based on the measured thickness of the remaining insulating film; and a buried oxide film etching step of etching the polished buried oxide film based on the determined etching amount.

Abstract: A trench is formed in the surface layer of a semiconductor substrate, surrounding an active region. A lower insulating film made of insulating material fills a lower region of the trench. An upper insulating film fills a region of the trench above the lower insulating film. The upper insulating film has therein a stress generating tensile strain in a surface layer of the active region.

Abstract: The method for fabricating a semiconductor device comprises the steps of: forming on a silicon substrate 10 a hard mask 20 of a silicon oxide film 12, and a silicon nitride film 14 having a width smaller than a width of the silicon oxide film 12; etching the silicon substrate 10 with the hard mask 20 as the mask to form a trench 26 for defining an active region 24 in the silicon substrate 10; and forming a silicon oxide film 28 on the silicon substrate 10 with the trench 26 formed in.

Abstract: A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation region that isolates the device region. The shallow trench isolation region includes a trench, a nitride film liner disposed at an upper portion of a side wall of the trench, and a thermal oxide film disposed at a lower portion of the side wall of the trench. The shallow trench isolation is arranged such that the width of a second portion of the shallow trench isolation region at which the thermal oxide film is disposed may be wider than the width of a first portion of the shallow trench isolation region at which the lower end of the nitride film liner is disposed.

Abstract: After forming a resist film on a Si substrate, a circuit pattern for a semiconductor integrated circuit, a first L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. Next, based on these patterns, the Si substrate is patterned. Thereafter, a polysilicon film is formed above the Si substrate. Subsequently, a resist film is formed on the polysilicon film. Next, a circuit pattern for a semiconductor integrated circuit, a second L-shaped length measuring pattern and a cross-shaped monitor pattern for alignment are formed on the resist film. At this time, the second L-shaped length measuring pattern is made to face in a direction in which the first L-shaped length measuring pattern is rotated 180 degrees in plane view. By patterning the polysilicon film with these patterns as a mask, a gate electrode is formed.

Abstract: The semiconductor device fabrication method comprises the step of forming a first insulation film 14 over a semiconductor substrate 10; the step of forming a semiconductor film 16 over the first insulation film 14; the step of forming a resist film 20 over the semiconductor film 16; the step of forming openings 21 in the resist film 20; the step of etching the semiconductor film 16 with the resist film 20 as the mask; the step of etching the first insulation film 14 with the semiconductor film 16 as the mask; and the step of etching the semiconductor substrate 10 with the first insulation film 14 as the mask to form trenches 22 in the semiconductor substrate 10. Silicon nitride film is patterned, using a mask of polysilicon film, whereby the silicon nitride film can be etched with high selectivity to the polysilicon film. Accordingly, a good pattern of the silicon nitride film can be formed.

Abstract: The semiconductor device fabrication method comprises the step of forming a first insulation film 14 over a semiconductor substrate 10; the step of forming a semiconductor film 16 over the first insulation film 14; the step of forming a resist film 20 over the semiconductor film 16; the step of forming openings 21 in the resist film 20; the step of etching the semiconductor film 16 with the resist film 20 as the mask; the step of etching the first insulation film 14 with the semiconductor film 16 as the mask; and the step of etching the semiconductor substrate 10 with the first insulation film 14 as the mask to form trenches 22 in the semiconductor substrate 10. Silicon nitride film is patterned, using a mask of polysilicon film, whereby the silicon nitride film can be etched with high selectivity to the polysilicon film. Accordingly, a good pattern of the silicon nitride film can be formed.