Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Abstract: An electric measuring apparatus is constructed in such a way as to include a signal processing circuit equipped with at least a polarized light separating unit, Faraday rotators, a light source, a photoelectric conversion element, and optical fibers for a sensor. The optical fibers for the sensor are placed around the periphery of an electrical conductor through which electric current to be measured flows. Furthermore, the rotation angle of each Faraday rotator at the time when the magnetism of each Faraday rotator is saturated is set to 22.5°+?° at a temperature of 23° C., thereby changing the rotation angle of each Faraday rotator by ?° from 22.5°.

Abstract: A lock device that restricts removal of an engaging member from an engaged member includes a cover attachable to the engaging member. The cover is moved between a position covering an operation portion and a position exposing the operation portion when external force is applied to the cover. A holding unit holds the cover at the position covering the operation portion. An authentication portion releases the cover from the holding unit when authentication is accomplished.

Abstract: A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.

Abstract: The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.

Abstract: An etching method and apparatus for etching a silicon oxide film selectively with respect to a silicon nitride film formed on a substrate are provided. A processing gas containing a plasma excitation gas and a CHF-based gas is introduced into a processing chamber such that a flow rate ratio of the CHF-based gas to the plasma excitation gas is 1/15 or higher. By generating a plasma in the processing chamber, the silicon oxide film is etched selectively with respect to the silicon nitride film formed on the substrate in the processing chamber.

Abstract: A power supplying plug lock device attachable to an operation arm of a power supplying plug, the operation arm operable to fix the power supplying plug to an inlet, is configured to restrict movement of the operation arm to prevent unauthorized removal of the power supplying plug. The power supplying plug lock device is externally attachable to the operation arm when an authentication member accomplishes authentication. A restriction member moves from an open position to a close position to engage with the operation arm when the power supplying plug lock device is attached to the operation arm. A position holding mechanism shifts to a lock state in cooperation with the movement of the restriction member to the close position, thereby holding the restriction member at the close position. The position holding mechanism maintains the lock state until the authentication member again accomplishes authentication.

Abstract: A drainage inducing member that promotes drainage is arranged on an edge portion on the back side of a drain hole provided in an inlet base of an inlet assembly, in order to better promote the drainage of water that has reached the drain hole to the outside.

Abstract: In a charging system for a vehicle for charging a power storage device, including the vehicle having the power storage device, and a charging cable for transmitting electric power supplied from an external power supply outside of the vehicle to the power storage device, charging information about charging performed by a charging device is set based on a signal generated by operation of an operation switch provided on a charging connector. This configuration can improve operability during charging.

Abstract: Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.

Abstract: In a noncontact electric power feeding system using a resonance method, electrical equipment installed within a coil case is configured to include an electric power receiving antenna and a rectifier in an integrated manner. The electrical equipment is driven by receiving electric power from an electromagnetic field generated by electromagnetic resonance, without power supply from the outside of the coil case.

Abstract: A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting a distance between the holding table and the dielectric plate is set to a first distance based on periodicity of a standing wave formed in the dielectric plate by the introduction of the microwave, and generating plasma in the processing chamber in a state where the electric field is generated in the processing chamber; and after the generating of the plasma, setting the distance to a second distance shorter than the first distance by moving the holding table up and down, and performing the plasma process on the target substrate.

Abstract: A vehicle lamp system 1 includes a plurality of light source units 22R and 22L and a controller 14 which controls the plurality of light source units 22R and 22L. The controller 14 sequentially turns on the plurality of light source units 22R and 22L when signals for operating a vehicle 10 are input. Thereby, it is possible to call attention to surrounding vehicles or pedestrians when starting the vehicle 10. The vehicle lamp system 1 can call attention to surrounding vehicles or pedestrians when starting a host vehicle.

Abstract: In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV.

Abstract: A two-core optical fiber magnetic field sensor is configured from at least a light incidence/emission unit; a lens; a magnetic garnet; and a reflector, wherein the lens and the magnetic garnet are disposed between the light incidence/emission end of the light incidence/emission unit and the reflector; a light beam is emitted from one optical fiber; the light beam is reflected by the reflector after being transmitted through the lens and the magnetic garnet; the light beam is transmitted again through the magnetic garnet and the lens after the reflection; and incident on the other optical fiber, the light beam is emitted again from the other optical fiber, and reflected by the reflector after being transmitted through the lens and the magnetic garnet; and the light beam is transmitted again through the magnetic garnet and the lens after the reflection and incident again on the one optical fiber.

Abstract: A drainage inducing member that promotes drainage is arranged on an edge portion on the back side of a drain hole provided in an inlet base of an inlet assembly, in order to better promote the drainage of water that has reached the drain hole to the outside.

Abstract: Disclosed is an optical fibre birefringence compensation mirror. Also disclosed is a current sensor wherein vibration resistance has been increased due to the optical connection of the optical fibre birefringence compensation mirror. The optical fibre birefringence compensation mirror includes: an optical fibre, a birefringence element, a lens, a magnet, a Faraday rotator, and a mirror. From the light incidence/emission end surface of the optical fibre, the birefringence element, Faraday rotator, and mirror are arranged in said order. Light comes in from the optical fibre, and is separated into two linearly polarised lights by the birefringence element. The polarisation planes of the two linearly polarised lights are rotated by the Faraday rotator, and the two linearly polarised lights are point-symmetrically reflected at one point by the mirror, then again rotated by the Faraday rotator, then re-combined into one light by the birefringence element and made to enter the optical fibre.