Abstract: A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side opposite to the side where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.

Abstract: A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit.

Abstract: Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.

Abstract: A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side (?Y direction) opposite to the side (+Y direction) where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.

Abstract: A charging system includes a locking device locking a connector provided at the end of a cable in the state where the connector is connected to an inlet provided in a vehicle; a release button for releasing locking by the locking device; a switch generating a signal indicating that the connector and the inlet are connected; a horn; and an ECU. In response to the operation of the release button, the switch stops generation of the signal. The ECU controls charging of a power storage device and detects whether the signal is issued or not. In the case where the ECU detects that generation of the signal is stopped during charging of the power storage device, the ECU causes the horn to issue an alarm.

Abstract: In a noncontact electric power feeding system by means of a resonance method, an electric power receiving apparatus includes a plurality of secondary self-resonant coils. The noncontact electric power feeding system makes a switch between these secondary self-resonant coils to detect a distance between the electric power receiving apparatus and an electric power transmitting unit, and selects, according to distance L as detected, a secondary self-resonant coil with high transfer efficiency for receiving electric power to accordingly feed electric power. In this way, distance L between the power receiving apparatus and the power transmitting unit can be precisely detected including distances from longer ones to shorter ones, and the transmission efficiency in transmitting electric power in a noncontact manner by means of the resonance method can be improved.

Abstract: An electric measuring apparatus is constructed in such a way as to include a signal processing circuit equipped with at least a polarized light separating unit, Faraday rotators, a light source, a photoelectric conversion element, and optical fibers for a sensor. The optical fibers for the sensor are placed around the periphery of an electrical conductor through which electric current to be measured flows. Furthermore, the rotation angle of each Faraday rotator at the time when the magnetism of each Faraday rotator is saturated is set to 22.5°+?° at a temperature of 23° C., thereby changing the rotation angle of each Faraday rotator by ?° from 22.5°.

Abstract: In a charging system for a vehicle for charging a power storage device, including the vehicle having the power storage device, and a charging cable for transmitting electric power supplied from an external power supply outside of the vehicle to the power storage device, charging information about charging performed by a charging device is set based on a signal generated by operation of an operation switch provided on a charging connector. This configuration can improve operability during charging.

Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Abstract: There is provided a manufacturing method for a microlens array including a multiple number of microlenses protruded in a substantially hemispherical shape from a surface. The manufacturing method includes forming a resist layer for forming a shape of the microlenses on an organic film layer serving as a material layer of the microlenses; and etching the formed resist layer and the organic film layer by using a mixed gas including hydrogen-containing molecules and fluorine-containing molecules.

Abstract: A selective oxidation process is performed on a gate electrode in a plasma processing apparatus 100. A wafer W with the gate electrode formed thereon is placed on a susceptor 2 within a chamber 1. Ar gas, H2 gas, and O2 gas are supplied from an Ar gas supply source 17, an H2 gas supply source 18, and an O2 gas supply source 19 in a gas supply system 16 through a gas feed member 15 into the chamber 1. At this time, a flow rate ratio H2/O2 of H2 gas relative to O2 gas is set to be 1.5 or more and 20 or less, preferably to be 4 or more, and more preferably to be 8 or more. Further, the pressure inside the chamber is set to be 3 to 700 Pa, such as 6.7 Pa (50 mTorr).

Abstract: A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side (?Y direction) opposite to the side (+Y direction) where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.

Abstract: A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit.

Abstract: A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side opposite to the side where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.

Abstract: In a noncontact electric power feeding system using a resonance method, electrical equipment installed within a coil case is configured to include an electric power receiving antenna and a rectifier in an integrated manner. The electrical equipment is driven by receiving electric power from an electromagnetic field generated by electromagnetic resonance, without power supply from the outside of the coil case.

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract: A plasma processing apparatus includes: a process container configured to accommodate a target object and hold a vacuum therein for performing a plasma process; a worktable configured to place the target object thereon inside the process container; a planar antenna including a plurality of slots and configured to supply microwaves into the process container; a gas feed mechanism configured to supply a process gas into the process container; and a top plate disposed opposite the worktable, the top plate being set at a position separated from the target object placed on the worktable by a distance of 20 mm or more and 100 mm or less.

Abstract: A polysilicon electrode layer (103) (a first electrode layer) is formed by forming a polysilicon film on a gate oxide film (102) on a silicon wafer (101). A tungsten layer (105) (a second electrode layer) is formed on this polysilicon electrode layer (103). In addition, a barrier layer (104) is formed on the polysilicon electrode layer (103) before the formation of the tungsten layer (105). Etching is then conducted using a silicon nitride layer (106) as the etching mask. Next, an oxide insulating film (107) is formed on an exposed surface of the polysilicon layer (103) by plasma oxidation wherein a process gas containing oxygen gas and hydrogen gas is used at a process temperature not less than 300° C. With this method, a selective oxidation of the polysilicon electrode layer (103) can be carried out without oxidizing the tungsten layer (105).

Abstract: A method for fabricating a semiconductor device includes forming a gate electrode on a surface of a substrate via a gate insulating film, forming an insulating film on a side surface of the gate electrode, and exposing an oxygen plasma onto the surface of the substrate. An electron temperature of the oxygen plasma in a vicinity of the surface of the substrate is equal to or less than about 1.5 eV.

Abstract: A semiconductor device manufacturing method includes forming a gate insulating film on a semiconductor substrate; forming, on the gate insulating film, a multilayered structure including at least a polysilicon layer and a metal layer containing a refractory metal; forming a gate electrode by etching the multilayered structure; and performing a plasma process by a plasma processing apparatus, which is configured to supply microwaves into a process chamber from a planar antenna including a plurality of slots and thereby to generate plasma, at a process pressure of 133.3 to 1,333 Pa and a process temperature of 250 to 800° C. by using a process gas containing at least hydrogen gas and oxygen gas, thereby selectively oxidizing the polysilicon layer in the gate electrode.