Abstract: There is provided a self-resonant coil used in a contactless power transferring apparatus capable of at least one of transferring and receiving electric power by magnetic field resonance. A coil is defined as a virtual coil, wherein the coil has a circular cross-sectional shape of a cross-section perpendicular to the extending direction and, when viewed with a cross-section perpendicular to the extending direction of the self-resonant coil, the length of the circumference defining the circular cross-section is equal to the length of the segment defining the outer circumference edge of the cross-section of the self-resonant coil. At least one of the radial direction width and the axis direction length of the self-resonant coil in the cross-section perpendicular to the extending direction of the self-resonant coil is less than the diameter of the cross-section of the virtual coil.

Abstract: A plasma processing apparatus (100) includes a plasma generation mechanism; a process container defining a process chamber configured to perform a plasma process on a target substrate; a substrate worktable configured to place the target substrate thereon inside the process container; and an exhaust mechanism configured to decrease pressure inside the process container. A wall (27a) of a support portion (27) for supporting a microwave transmission plate (28) is present in an area having an electron temperature of 1.5 eV or more during plasma generation. A covering portion (60) made of a heat resistant insulator, such as quartz, is disposed to cover the wall (27a).

Abstract: A dielectric board (20) is arranged on a ceiling surface, which is of a processing container (2) and faces a susceptor (3), a slot antenna (30) having a plurality of slots (33) which pass through microwaves is arranged on an upper surface of the dielectric board (20), and a protruding member (21), which is composed of a member different from the dielectric board (20) and eliminates abnormal discharge, is provided on a lower peripheral section of the dielectric board (20). A field strength at the peripheral section of the dielectric board (20) is controlled by adjusting a space between an outer circumference surface (22) of a cylindrical section of the protruding member (21) and a side wall inner circumference surface (5a) of the processing container (2) or adjusting the thickness of the cylindrical section of the protruding member (21).

Abstract: In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.

Abstract: A wireless terminal management apparatus includes a communication unit performing short-distance wireless communication with wireless terminals; a registering unit that registers information indicating a wireless terminal connectable to the communication unit; a determining unit that determines whether the number of registrations of information indicating a wireless terminal registered in the registering unit has reached a given number of wireless terminals allowed to connect to the communication unit; an updating unit that when a non-registered wireless terminal is nearby and if the number of registrations has reached the given number, updates the number of registrations such that information indicating the non-registered wireless terminal becomes registered; and a searching unit that searches for a wireless terminal nearby, where if a search result indicates no registered wireless terminals and a non-registered wireless terminal nearby, the updating unit updates to enable information indicating the non-regi

Abstract: Provided is a reflective optical circulator capable of improving characteristics by preventing the occurrence of PDL and non-uniformity of insertion losses of reciprocating optical paths. The reflective optical circulator includes: an optical element unit having a first polarization separating element, a 45° non-reciprocal polarization plane rotating element, a phase element for rotating a polarization plane of an incident light by 90°, and a second polarization separating element; a light incidence/emission unit; a lens; and a reflector. All waveguides are disposed at an equivalent distance from a central point, and a shift amount of an extraordinary ray in the second polarization separating element is set to be larger than a shift amount of an extraordinary ray in the first polarization separating element. In addition, the phase element is constructed with two phase optical elements, and only one polarization component is allowed to transmit through the two phase optical elements.

Abstract: A plasma oxidation processing method is performed, on a structural object including a silicon layer and a refractory metal-containing layer, to form a silicon oxide film. A first plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 1.33 to 66.67 Pa. A second plasma oxidation process is performed by use of a process gas including at least hydrogen gas and oxygen gas and a process pressure of 133.3 to 1,333 Pa, after the first plasma oxidation process.

Abstract: A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride layer and to form a silicon oxide film. Further, the ratio of a thickness of a silicon oxynitride film formed within the silicon nitride layer to a thickness of the silicon oxide film formed by the oxidization is equal to or smaller than 20%.

Abstract: A plasma processing method of carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, includes the steps of: a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, and, after that; b) generating plasma, and carrying out curing processing on the low dielectric constant film.

Abstract: A method for hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.

Abstract: A plasma processing apparatus comprising at least a plasma processing chamber for plasma-processing an object; object-holding means for disposing the object in the plasma processing chamber; and plasma-generating means for generating a plasma in the plasma processing chamber. The inner wall of the plasma processing chamber is at least partially covered with an oxide film based on a pre-treating plasma. A plasma processing apparatus and a plasma processing method effectively prevent the spluttering and the etching of the inner wall of the plasma processing chamber while suppressing contamination to the object.

Abstract: In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.

Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.

Abstract: A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

Abstract: In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.

Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract: The present invention relates to a method of lowering dielectric constant of an insulating film including Si, O and CH formed by a chemical vapor deposition process. A process gas containing hydrogen atoms is supplied into a reaction vessel. A microwave is introduced into the reaction vessel to supply a uniform electromagnetic wave, thereby a plasma containing a hydrogen radical is generated in the reaction vessel. The structure of the insulating film is modified by the hydrogen radical contained in the plasma irradiated to the insulating film, lowering the dielectric constant of the film. The microwave is supplied into the reaction vessel through a radial-slot antenna.