Abstract: A chromene compound which can exhibit excellent photochromic properties. The chromene compound is represented by the following formula (1). In the formula, at least one of R1 or R2 represents the group having the radical-polymerizable group, wherein the group having a radical-polymerizable group is represented by the following formula (2) (wherein R10 represents a linear or branched alkylene group having 1 to 10 carbon atoms and l represents an integer of from 0 to 50); and the ring Z that is represented by the following formula (Z) and is spiro-bonded to a carbon atom located at position-13 in the formula (1) is preferably an aliphatic cyclic group that may have a substituent, the group having 3 to 20 carbon atoms for forming the ring together with the carbon atom at the 13-position, or the like.

Abstract: A side airbag device capable of preventing interference between a harness and an airbag is provided between a vehicle body and a seat. The side airbag device includes an airbag module including an inflatable airbag and an inflator supplying a gas into the airbag, a base member including an airbag storage portion having a concave shape and storing the airbag module and is attached between a vehicle body door and the seat, and a retainer member holding the airbag storage portion from the rear side of the vehicle body. The base member includes a first through hole through which a harness of the inflator is inserted and a flange which is formed in the periphery of the first through hole. The retainer member includes a second through hole through which the harness of the inflator is inserted and which is provided at a position facing the first through hole.

Abstract: Provided is a vehicle seat having a seat back that can be folded forward, in which the buckle is prevented from interfering with the seat hack when the seat back is folded forward. A seat cushion frame (F1) rotatably attached to the seat back frame (F2) includes a pair of side frames (11) extending in a fore and aft direction, a front frame (12) extending between front parts of the side frames, and a rear frame (13) extending between rear parts of the side frames and provided with a curved portion (13A) protruding forward in a middle part thereof. A buckle support arm is located behind the curved portion, the curved portion being dimensioned so as not to interfere with the buckle when the buckle support arm is in a stowed position.

Abstract: The present invention relates to a photochromic compound including a polyvalent residue on which at least one group having a photochromic moiety is substituted, and at least one long-chain group not containing a photochromic moiety and having a molecular weight of 300 or more is further substituted; and a curable composition containing the same. In accordance with the present invention, it is possible to provide a photochromic compound which has high solubility in a polymerizable compound serving as a matrix while retaining high photochromic characteristics and is hardly affected by the matrix; and a curable composition containing the same.

Abstract: To enhance efficiency of a process of implanting impurities into a silicon carbide semiconductor layer. To provide a method of manufacturing a semiconductor device including a silicon carbide semiconductor layer, the method of manufacturing including: implanting impurities multiple times to an impurity implantation region in the silicon carbide semiconductor layer to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or lower than 150° C. In the implanting, impurities may be implanted multiple times to the impurity implantation region to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or higher than room temperature.

Abstract: A photochromic polyrotaxane compound which comprises an axial molecule and a plurality of cyclic molecules clathrating the axial molecule, wherein at least one side chain containing a photochromic moiety is bonded to at least one of the cyclic molecules, and a curable composition comprising the photochromic polyrotaxane compound and a polymerizable compound.

Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: The invention is a photochromic compound having an indenonaphthopyran skeleton, and the indenonaphthopyran skeleton has an alkenyl group having 10 to 30 carbon atoms, and an oligomer chain group A having 3 or more recurring units selected from a polyalkylene oxide oligomer chain group, a polyester oligomer chain group, a polysiloxane chain group and a polyester polyether oligomer chain group. The invention can provide a photochromic compound capable of expressing excellent photochromic characteristics in various cured products and capable of preventing cured products from becoming cloudy.

Abstract: To provide a photocurable resin composition comprising an N-vinyl amide compound, a polyfunctional (meth)acrylate monomer and a photopolymerization initiator and having excellent adhesion to an optical substrate and free from an appearance defect such as a crack or shrinkage and a laminate having a coat layer obtained by curing the photocurable resin composition.

Abstract: A side airbag device capable of preventing interference between a harness and an airbag is provided between a vehicle body and a seat. The side airbag device includes an airbag module including an inflatable airbag and an inflator supplying a gas into the airbag, a base member including an airbag storage portion having a concave shape and storing the airbag module and is attached between a vehicle body door and the seat, and a retainer member holding the airbag storage portion from the rear side of the vehicle body. The base member includes a first through hole through which a harness of the inflator is inserted and a flange which is formed in the periphery of the first through hole. The retainer member includes a second through hole through which the harness of the inflator is inserted and which is provided at a position facing the first through hole.

Abstract: Provided is a sensor apparatus including: a normal operation unit including a first sensor and a storage device; an external environment detection unit including a second sensor; a power supply switch unit configured to control supply of electric power to the normal operation unit; and a power supply configured to supply the electric power to the normal operation unit via the power supply switch unit. In the sensor apparatus, in an operational mode, the normal operation unit records data measured by the first sensor into the storage device, and, in a non-operational mode, when a measured value obtained by the second sensor satisfies a predetermined condition, the external environment detection unit controls the power supply switch unit so that the power supply switch unit supplies the electric power to the normal operation unit, and the normal operation unit records the data measured by the first sensor into the storage device.

Abstract: To enhance efficiency of a process of implanting impurities into a silicon carbide semiconductor layer. To provide a method of manufacturing a semiconductor device including a silicon carbide semiconductor layer, the method of manufacturing including: implanting impurities multiple times to an impurity implantation region in the silicon carbide semiconductor layer to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or lower than 150° C. In the implanting, impurities may be implanted multiple times to the impurity implantation region to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or higher than room temperature.

Abstract: A chromene compound having at least one indenonaphthopyran moiety which has a group forming a spiro ring together with the 13-position carbon atom and further an oligomer chain group selected from a polyalkylene oxide oligomer chain group having at least three recurring units and a polyester oligomer chain group having at least three recurring units, represented by the following formula and having reduced matrix dependence: wherein R1 and R2 are each a group which may have an oligomer chain group, the ring Z bonded to the 13-position carbon atom of the chromene compound is a Spiro ring group, and R3 and R4 are each an aryl group or heteroaryl group which may have an oligomer chain group. Preferably, the chromene compound has at least one oligomer chain group in the molecule.

Abstract: A photochromic polyrotaxane compound which comprises an axial molecule and a plurality of cyclic molecules clathrating the axial molecule, wherein at least one side chain containing a photochromic moiety is bonded to at least one of the cyclic molecules, and a curable composition comprising the photochromic polyrotaxane compound and a polymerizable compound.

Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: To enhance efficiency of a process of implanting impurities into a silicon carbide semiconductor layer. To provide a method of manufacturing a semiconductor device including a silicon carbide semiconductor layer, the method of manufacturing including: implanting impurities multiple times to an impurity implantation region in the silicon carbide semiconductor layer to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or lower than 150° C. In the implanting, impurities may be implanted multiple times to the impurity implantation region to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or higher than room temperature.

Abstract: Provided is a vehicle seat having a seat back that can be folded forward, in which the buckle is prevented from interfering with the seat hack when the seat back is folded forward. A seat cushion frame (F1) rotatably attached to the seat back frame (F2) includes a pair of side frames (11) extending in a fore and aft direction, a front frame (12) extending between front parts of the side frames, and a rear frame (13) extending between rear parts of the side frames and provided with a curved portion (13A) protruding forward in a middle part thereof. A buckle support arm is located behind the curved portion, the curved portion being dimensioned so as not to interfere with the buckle when the buckle support arm is in a stowed position.

Abstract: The present disclosure describes, in an armrest capable of being displaced between a stored position and a deployed position, a vehicular seat capable of preventing foreign matter from entering the interior thereof through a gap formed between the armrest (in particular, the vicinity of the center of displacement thereof) and a mounted portion. The present disclosure relates to a vehicular seat provided with an armrest. Both ends of a first shaft are pivotably supported by first holes formed in a plurality of guide members, and both ends of a second shaft are inserted into second holes to be movable along the holes. Between a side surface side of the armrest and the guide members, a plate member which covers at least a part of the second holes is provided.

Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.