Abstract: Hydrogen atoms and crystal defects are introduced into an n-semiconductor substrate by proton implantation. The crystal defects are generated in the n-semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: It is necessary to increase the scale of a sensor network to achieve high resource exploration efficiency. On the other hand, since there are increasing needs to extend the area of an exploration region and to detect deeper geological stratum and crust structures more accurately, the large-scale sensor network needs to be operated for a long period of several weeks or longer. In order to solve the problem, a sensor unit needs to be turned on always to perform measurement always. However, an auxiliary measurement unit is activated intermittently since the auxiliary measurement unit needs to acquire data at necessary timings only. On the other hand, during collection and transmission of data and charging of a battery, a sensor terminal detects whether power is supplied from a data collection and charging device and automatically turns off the sensor unit and the auxiliary measurement unit to activate a data transmission unit.

Abstract: A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.

Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: Hydrogen atoms and crystal defects are introduced into an n-semiconductor substrate by proton implantation. The crystal defects are generated in the n-semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.

Abstract: To provide a photocurable resin composition comprising an N-vinyl amide compound, a polyfunctional (meth)acrylate monomer and a photopolymerization initiator and having excellent adhesion to an optical substrate and free from an appearance defect such as a crack or shrinkage and a laminate having a coat layer obtained by curing the photocurable resin composition.

Abstract: To enhance efficiency of a process of implanting impurities into a silicon carbide semiconductor layer. To provide a method of manufacturing a semiconductor device including a silicon carbide semiconductor layer, the method of manufacturing including: implanting impurities multiple times to an impurity implantation region in the silicon carbide semiconductor layer to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or lower than 150° C. In the implanting, impurities may be implanted multiple times to the impurity implantation region to different depths, with temperature of the silicon carbide semiconductor layer being set to be equal to or higher than room temperature.

Abstract: Provided are a device, a system, and a method in which redundancy is changed in accordance with a line state, and thus the optimal redundancy can be set while the current settings are compared to the previous settings. A communication device measures line quality information from a received packet, and generates a redundancy change instruction based on information regarding a line. In a case where the communication device acquires line quality information for the second and subsequent times, the communication device compares the previous redundancy change instruction and the previous line quality information, to the current line quality information, and sets redundancy. Thus, it is possible to suppress the occurrence of congestion and satisfy a target value of the line quality, and to search for a condition which causes the redundancy to be the minimum.

Abstract: Provided is a sensor apparatus including: a normal operation unit including a first sensor and a storage device; an external environment detection unit including a second sensor; a power supply switch unit configured to control supply of electric power to the normal operation unit; and a power supply configured to supply the electric power to the normal operation unit via the power supply switch unit. In the sensor apparatus, in an operational mode, the normal operation unit records data measured by the first sensor into the storage device, and, in a non-operational mode, when a measured value obtained by the second sensor satisfies a predetermined condition, the external environment detection unit controls the power supply switch unit so that the power supply switch unit supplies the electric power to the normal operation unit, and the normal operation unit records the data measured by the first sensor into the storage device.

Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: A p+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n? drift layer and an n+ field stop layer is provided in a region which is deeper than the p+ collector layer formed on the rear surface side. A front surface element structure is formed on the front surface of the semiconductor substrate and then protons are radiated to the rear surface of the semiconductor substrate at an acceleration voltage corresponding to the depth at which the n+ field stop layer is formed. A first annealing process is performed at an annealing temperature corresponding to the proton irradiation to change the protons into donors, thereby forming a field stop layer. Then, annealing is performed using annealing conditions suitable for the conditions of a plurality of proton irradiation processes to recover each crystal defect formed by each proton irradiation process.

Abstract: In a multi-hop radio communication network including a base station (a radio station connected to a management server), each radio station in the network is given a data transmission opportunity in turn according to a predetermined transmission order, and transmits data via broadcast or multicast upon occurrence of transmission timing. The radio station having received the data adds data of the radio station to the received data and then forwards the packet via broadcast or multicast when it is the radio station's turn for transmission.

Abstract: A packet collision among a plurality of access points is avoided and QoS is ensured. An access point that shares a wireless channel with a plurality of access points to carry out communication is provided with a function for determining, based on information contained in a polling communication signal or a broadcast signal transmitted from another access point, an access point (preceding AP) that is to perform polling communication immediately before the own station to form a group within which the order of the polling communication is determined, and after determining that a polling communication period of the preceding AP has ended, starting the polling communication period of the own station in a wireless network.

Abstract: Provided is a wireless transmission system including a plurality of access points and an access controller. The access controller determines a start standard time for a polling period for the plurality of access points to perform polling communication with a plurality of wireless terminals. The access controller generates a scheduling setting information indicating timings when the plurality of access points perform polling communication with the plurality of wireless terminals during the polling period. The access controller transmits, to each of the plurality of access points, a polling period start signal including the start standard time and a corresponding portion of the scheduling setting information for each of the plurality of access points. The plurality of access points perform polling communication with the plurality of wireless terminals based on respective polling period start signals.

Abstract: The present disclosure describes, in an armrest capable of being displaced between a stored position and a deployed position, a vehicular seat capable of preventing foreign matter from entering the interior thereof through a gap formed between the armrest (in particular, the vicinity of the center of displacement thereof) and a mounted portion. The present disclosure relates to a vehicular seat provided with an armrest. Both ends of a first shaft are pivotably supported by first holes formed in a plurality of guide members, and both ends of a second shaft are inserted into second holes to be movable along the holes. Between a side surface side of the armrest and the guide members, a plate member which covers at least a part of the second holes is provided.

Abstract: A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer. A disorder generated in a proton passage region is reduced by a laser annealing process to form an n-type disorder reduction region. As such, the n-type field stop layer and the n-type disorder reduction region are formed by the proton implantation. Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.