Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

Abstract: Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

Abstract: A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells.

Abstract: An apparatus (50) detects a pedestrian/vehicle impact, the apparatus including a plurality of sensors (62, 64, 66) mounted near a forward location of a vehicle (52), each sensor providing an associated signal indicative of an impact event. A metric determining device (80) determines metric values for each of the sensor signals. A controller (80) determines if any of said determined metric values indicates the occurrence of a misuse event. The controller also determines if a pedestrian/vehicle impact event is occurring by comparing the metric value of at least one sensor signal against a selectable threshold. An actuation signal is provided in response to the comparison. The selectable threshold is selected in response to the determined occurrence of a misuse event. An actuatable pedestrian impact mitigation device (84) is attached to the vehicle and is actuated in responsive to the actuation signal from said controller.

Abstract: Provided is an integrated gas discharge tube. In the integrated gas discharge tube, the structure of the gas discharge tube is regulated into an upper cover and an insulative base, and the internal side surface and the external side surface of the bottom surface of the insulative base are respectively subject to electrode integration, so that the discharge effect of the gas discharge tube is effectively increased and the preparation process and the preparation flow of a multi-terminal-to-ground gas discharge tube are greatly simplified so as to greatly simplify the preparation process and to realize batch production and high integration of the gas discharge tube. Also provided is a preparation method for an integrated gas discharge tube.

Abstract: Provided is an integrated gas discharge tube. In the integrated gas discharge tube, the structure of the gas discharge tube is regulated into an upper cover and an insulative base, and the internal side surface and the external side surface of the bottom surface of the insulative base are respectively subject to electrode integration, so that the discharge effect of the gas discharge tube is effectively increased and the preparation process and the preparation flow of a multi-terminal-to-ground gas discharge tube are greatly simplified so as to greatly simplify the preparation process and to realize batch production and high integration of the gas discharge tube. Also provided is a preparation method for an integrated gas discharge tube.

Abstract: Embodiments of the present invention are a system, a computer program product, and a method for implementing an integrated circuit design. The method for implementing an integrated circuit design includes accessing an original electronic representation of an integrated circuit layout from a first user file, and accessing a defined sensitivity index that characterizes an impact of the dummy pattern on the functional component. The impact of the dummy pattern on the functional component is analyzed and it is determined whether the impact is within a limit of the sensitivity index. One of a plurality of features of the dummy pattern is adjusted if the impact is not within the limit to form a generated electronic representation of a modified integrated circuit layout, and the generated electronic representation is output to a second user file. The integrated circuit layout includes a dummy pattern and a functional component.

Abstract: Methods of determining asymmetric properties of structures are described. A method includes measuring, for a grating structure, a first signal and a second, different, signal obtained by optical scatterometry. A difference between the first signal and the second signal is then determined. An asymmetric structural parameter of the grating structure is determined based on a calculation using the first signal, the second signal, and the difference.

Abstract: The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.

Abstract: An exemplary method for manufacturing a heat sink includes steps: providing a base with a plurality of spaced protrusions formed thereon; providing a plurality of fins and bending a distal end of each fin to form a connecting end; fitting each fin between two adjacent protrusions correspondingly and attaching the connecting end of each fin to the base; and deforming each protrusion to press the connecting ends of two adjacent fins.

Abstract: A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells.

Abstract: The present disclosure relates to a curve-fitting procedure for determining proximity effect device parameters in semiconductor fabrication. Methods presented herein are adapted to determine the impact of narrow width related edge effects on device characteristics by comparing two-dimensional (2D) and/or three-dimensional (3D) device simulations. Methods presented herein are adapted to determine the accuracy of conventional extraction methods utilizing non-rectangular gate device simulation.

Abstract: A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells.

Abstract: Presented herein are techniques to enable a user of an electronic device having a display and touch screen to customize the size and location of a displayed keypad or keyboard such that the user can more easily hold the electronic device and operate the keypad or keyboard using a single hand. The techniques include detecting a touch operation input via the touch screen, the touch operation including a start point, an end point and a drag path between the start point and the end point; and when the start point is located at a first boundary of the touch screen and the end point is located at a second boundary of the touch screen, defining a bounded area of the display according to the first boundary, the second boundary and the drag path in which the set of keys is to be re-displayed.

Abstract: Among other things, techniques and systems for 3D modeling of a FinFET device and for detecting a variation for a design layout based upon a 3D FinFET model are provided. For example, a fin height of a FinFET device is determined based upon imagery of the FinFET device. The fin height and a 2D FinFET model for the FinFET device are used to create a 3D FinFET model. The 3D FinFET model takes into account the fin height, which is evaluated to identify fin height variations amongst FinFET devices within the design layout. For example, a fin height variation is determined based upon a proximity pattern density, a fin pitch, a gate length, or other parameters/measurements. A voltage threshold variation is determined based upon the fin height variation. This allows the design layout to be modified to decrease the variation.

Abstract: A video-processing chip capable of saving power is disclosed. The video-processing chip includes a microprocessor, a scalar, a first memory, and a second memory. The microprocessor is used for executing program codes. The scalar is used for adjusting a size of a received image. The first memory is coupled to the microprocessor and to the scalar for providing memory space to the scalar for image processing. The second memory is coupled to the microprocessor for storing the program codes of the microprocessor for controlling a power switch. Wherein a size of the first memory is greater than a size of the second memory.

Abstract: An apparatus (50) detects a pedestrian/vehicle impact, the apparatus including a plurality of sensors (62, 64, 66) mounted near a forward location of a vehicle (52), each sensor providing an associated signal indicative of an impact event. A metric determining device (80) determines metric values for each of the sensor signals. A controller (80) determines if any of said determined metric values indicates the occurrence of a misuse event. The controller also determines if a pedestrian/vehicle impact event is occurring by comparing the metric value of at least one sensor signal against a selectable threshold. An actuation signal is provided in response to the comparison. The selectable threshold is selected in response to the determined occurrence of a misuse event. An actuatable pedestrian impact mitigation device (84) is attached to the vehicle and is actuated in responsive to the actuation signal from said controller.

Abstract: A method includes retrieving a first component information of a secured portion of a package, wherein the first component information is encrypted. The step of retrieving includes decrypting the first component information. A thermal resistance-network (R-network) is generated from the decrypted first component information. A temperature map of the package is generated using the thermal R-network and a second component information of an unsecured portion of the package, wherein the secured portion and the unsecured portion are bonded to each other.

Abstract: A case assembly includes an upper case, a lower case, a pivot, a first shaft, a second shaft, and a stopper. The pivot is pivotally connected to the lower case, such that the upper case is able to rotate with respect to the lower case. The stopper has a shaft hole, a guiding slot hole, and a fixing slot hole. The shaft hole is disposed at one end of the stopper, and fixing slot hole is disposed at the other end of the stopper. The fixing slot hole communicates with the guiding slot hole. The first and the second shafts respectively insert into the shaft hole and the guiding slot hole. When the upper case rotates with respect to the lower case, the second shaft is stuck in the fixing slot hole from the guiding slot hole.

Abstract: An apparatus (50) detects a pedestrian/vehicle impact, the apparatus including a plurality of sensors (62, 64, 66) mounted near a forward location of a vehicle (52), each sensor providing an associated signal indicative of an impact event. A metric determining device (80) determines metric values for each of the sensor signals. A controller (80) determines if any of said determined metric values indicates the occurrence of a misuse event. The controller also determines if a pedestrian/vehicle impact event is occurring by comparing the metric value of at least one sensor signal against a selectable threshold. An actuation signal is provided in response to the comparison. The selectable threshold is selected in response to the determined occurrence of a misuse event. An actuatable pedestrian impact mitigation device (84) is attached to the vehicle and is actuated in responsive to the actuation signal from said controller.