Abstract: A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type.

Abstract: A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

Abstract: A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the first semiconductor zone, at least one second rectifying junction with respect to the first semiconductor zone, wherein the three rectifying junctions each have a barrier height of different magnitude.

Abstract: Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate.

Abstract: A circuit having a Schottky contact component is disclosed. One embodiment provides a semiconductor substrate having a layer of a first conductivity type, a metal layer, and delimited semiconductor regions of a second conductivity type opposite the first conductivity type, provided in or on the main surface, in order to increase the resistance of the Schottky contact component to overcurrents. At least the predominant number of delimited semiconductor regions of the second conductivity type being provided in the form of islands with a predetermined distance greater than a minimum interaction distance required for interaction of the islands to achieve an associated shielding effect.

Abstract: The invention relates to a lateral semiconductor diode, in which contact metal fillings (6, 7), which run in trenches (3, 4) in particular in a silicon carbide body (1, 2), are interdigitated at a distance from one another, and a rectifying Schottky or pn junction (18) is provided.

Abstract: A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.

Abstract: A method for treating a surface on an SiC semiconductor body produced by epitaxy. According to the method, the parts of the epitactic layer that are deposited in the final phase of the epitaxy are removed by etching and a wet chemical treatment is then carried out in order to remove a thin natural oxide on the surface. Alternatively, a metal layer configured as a Schottky contact and/or as an ohmic contact can also be applied to the surface immediately after the removal process.