Abstract: The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

Abstract: A customer is made to have an object equipped with a chip (wireless chip) capable of wireless communication. Further, an antenna is arranged in each of an entrance and an exit of a saleroom in a store and a plurality of points, respectively, inside the saleroom of the store. When the customer approaches the entrance, exit, and plurality of points, positional information and time information are written from an antenna arranged in the approached point to the wireless chip. By reading information written in the wireless chip, a movement path or the like of the customer in the saleroom is judged. The needs of the customer are judged based on the result.

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract: The conventional light-emitting element formed by an electroluminescent material has a problem due to poor color purity of light emission. Accordingly, it is an object of the present invention to provide a high luminance and high efficiency light-emitting device formed by an organic compound material. The invention provides a light-emitting device in which an organic compound layer that emits light having an emission peak with a half-band width of at most 10 nm upon applying current is interposed between a pair of electrodes is provided. The variation of emission peak intensity depending on a current density can be sorted by two linear regions with different gradients. A region of a sharp gradient is at a higher current density side compared to a region of a slow gradient. TFTs are provided to each pixel in order to perform active matrix driving.

Abstract: It is an object to provide a semiconductor device the data writing of which can be performed except in manufacturing and the counterfeiting of which by rewriting can be prevented. Furthermore, it is another object of the invention to provide a semiconductor device constituted by an organic memory having a simple structure at low cost. A memory cell is constituted by connecting a transistor in parallel or series to an organic element having an organic compound layer, and each memory cell is connected in series or parallel to constitute a NAND memory or a NOR memory. The organic element can change its electrical property irreversibly by application of a current or a voltage, irradiation of light, or the like.

Abstract: It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.

Abstract: It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

Abstract: To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

Abstract: It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.

Abstract: To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a second conductive layer is formed containing one kind or plural kinds of indium, tin, lead, bismuth, calcium, manganese, or zinc; or oxidation treatment is performed at least one of interfaces between an organic compound layer and the first conductive layer and between the organic compound layer and the second conductive layer. The first conductive layer, the organic compound layer, and the second conductive layer which are formed over a first substrate with a peeling layer interposed therebetween can be peeled from the first substrate with the peeling layer, and transposed to a second substrate.

Abstract: In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

Abstract: It is an object of the present invention to provide a semiconductor device capable of additionally recording data at a time other than during manufacturing and preventing forgery due to rewriting and the like. Moreover, another object of the present invention is to provide an inexpensive, nonvolatile, and highly-reliable semiconductor device. A semiconductor device includes a first conductive layer, a second conductive layer, and an organic compound layer between the first conductive layer and the second conductive layer, wherein the organic compound layer can have the first conductive layer and the second conductive layer come into contact with each other when Coulomb force generated by applying potential to one or both of the first conductive layer and the second conductive layer is at or over a certain level.

Abstract: It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

Abstract: The present invention provides an involatile memory device that is capable of data writing and erasing at a time other than during manufacturing, and a semiconductor device having the memory device. Also, the present invention provides a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. A memory device of the present invention includes a first conductive layer and a second conductive layer of which at least one has a light transmitting property, and an organic compound layer that is in contact with the first conductive layer or the second conductive layer. The organic compound layer includes conductive particles that are dispersed within the layer, and the organic compound included in the organic compound layer has a site that can photoisomerize.

Abstract: To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.

Abstract: To provide a small and lightweight organic laser device which can be manufactured in a reproductive manner and from which laser light with a desired wavelength can be obtained. A first substrate provided with a light-emitting element having a light-emitting layer between a pair of electrodes and a second substrate provided with a laser medium including a laser dye face each other and one of the pair of electrodes, which is placed between the light-emitting layer and the laser medium, has a light transmitting property. With such a structure, a laser device with which a laser medium and a light source are integrated can be provided.

Abstract: It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.

Abstract: It is an object of the present invention to provide a volatile semiconductor device into which data can be additionally written and which is easy to manufacture, and a method for manufacturing the same. It is a feature of the present invention that a semiconductor device includes an element formation layer including a first transistor and a second transistor which are provided over a substrate; a memory element provided over the element formation layer; and a sensor portion provided above the memory element, wherein the memory element has a layered structure including a first conductive layer, and an organic compound layer, and a second conductive layer, the first conductive layer is electrically connected to the first transistor, and the sensor portion is electrically connected to the second transistor.