Abstract: Provided are a memory device and a method of forming the same. The memory device includes a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the first layer stack and the first gate electrode; and a first ferroelectric layer between the first channel layer and the first gate electrode. The second tier includes a second layer stack; a second gate electrode penetrating through the second layer stack; a second channel layer between the second layer stack and the second gate electrode; and a second ferroelectric layer between the second channel layer and the second gate electrode.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

Abstract: Techniques for encoding or decoding digital video or pictures include acquiring a video bitstream that includes an encoded video image that is a two-dimensional image comprising multiple regions of a panoramic image in three-dimensional coordinates, extracting neighboring information for the multiple regions, performing, using the neighboring information, post-processing of a video image decoded from the video bitstream, and generating a display image from the video image after the post-processing.

Abstract: Disclosed are a temporary plugging agent and a preparation method thereof, and a method for temporary plugging and fracturing of a high-temperature reservoir. The temporary plugging agent includes the following components in mass fractions: acrylamide 5%, composite crosslinking agent 1%, laponite 1%, ammonium persulfate 0.1% and water 92.9%.

Abstract: A data transmission method and apparatus applied to the wireless communications field, where the method includes receiving, by a first access point (AP), cooperation configuration information from a second AP, where the cooperation configuration information of the second AP indicates basic cooperation information of the second AP to the first AP, and triggering, by the first AP based on a quantity of spatial streams allocated through cooperation, at least one cooperation station (STA) associated with the first AP to perform uplink data transmission using a quantity of spatial streams allocated by the first AP.

Abstract: A semiconductor manufacturing equipment cleaning system has a multi-station cleaning and inspection system. Within semiconductor manufacturing equipment cleaning system, a tray cleaning station uses a first rotating brush passing over a first surface of a carrier and possibly semiconductor die, and a second rotating brush passing over a second surface of the carrier and semiconductor die opposite the first surface of the carrier and semiconductor die. Debris and contaminants dislodged from the first surface and second surface of the carrier by the first rotating brush and second rotating brush are removed under vacuum suction. A conveyor transports the carrier through the multi-station cleaning and inspection system. The first rotating brush and second rotating brush move in tandem across the first surface and second surface of the carrier. Air pressure is injected across the first rotating brush and second rotating brush to further remove debris and contaminants.

Abstract: The present invention relates to a display gauge, particularly used in a cab of a motor vehicle. The display gauge comprises a display unit and a control unit, the display unit having a stationary warning zone, the control unit being connectable with different types of sensors to receive sensor signals, wherein the display gauge further comprises a coded selector that can be operated by a user, the selector being electrically connected to the control unit to transmit to the control unit a signal indicative of a type of a current sensor signal selected by the user, and the control unit controls display of the display unit according to a value of the current sensor signal, so that a state in which the value of the current sensor signal reaches a warning value range can be displayed through the warning zone regardless of the type of the sensor.

Abstract: A heat dissipation structure having a heat pipe is provided. The heat dissipation structure includes a heat dissipation base, a plurality of fins, at least one heat pipe, and at least a first heat dissipation contact material and a second heat dissipation contact material that are different from one another. The heat dissipation base has a first and a second heat dissipation surface opposite to each other. The second heat dissipation surface is connected to the fins. At least one recessed trough is concavely formed on the first heat dissipation surface. The at least one heat pipe is located in the at least one recessed trough. The first and the second heat dissipation contact material are filled in the at least one recessed trough. A melting point of the second heat dissipation contact material is smaller than a melting point of the first heat dissipation contact material.

Abstract: A remote controller, a remote-control system and a control method thereof are provided. The remote controller includes a motion sensing circuit and a wireless communication circuit electrically connected to the motion sensing circuit. The motion sensing circuit determines whether or not a motion of the remote controller complies with one of multiple reference motions. When the motion of the remote controller complies with one of the reference motions, the wireless communication circuit is switched from a sleep state to a working state. The wireless communication circuit that is in the working state determines whether or not a received signal strength indication between the remote controller and a controlled device is greater than or equal to a strength threshold. When the received signal strength indication is less than the strength threshold, the wireless communication circuit is switched from the working state to the sleep state.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A semiconductor device including a substrate, a source region, a drain region, a first gate structure and a second gate structure is provided. The source region and a drain region are formed in the substrate. The first gate structure is formed on the substrate and adjacent to the source region. The second gate structure is formed on the substrate and adjacent to the drain region. The second gate structure is electrically coupled to the drain region.

Abstract: A memory cell includes a read word line extending in a first direction, a write transistor, and a read transistor coupled to the write transistor. The read transistor includes a ferroelectric layer, a drain terminal of the read transistor directly connected to the read word line, and a source terminal of the read transistor coupled to a first node. The write transistor is configured to adjust a polarization state of the read transistor, the polarization state corresponding to a stored data value of the memory cell.

Abstract: The image sensing structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes at least one first unit. The at least one first unit includes a plurality of first interconnects adjacent to the top side of the first semiconductor device, a row selector, and an analog-to-digital converter (ADC) connected to the row selectors. The second semiconductor device includes at least one second unit. The at least one second unit includes a photodiode facing the top side of the second semiconductor device. The photodiode is configured to receive the light incident on the top side of the second semiconductor device. The top side of the first semiconductor device is bonded to the bottom side of the second semiconductor device.

Abstract: The present invention relates to methods, devices and systems for associating consumable data with an assay consumable used in a biological assay. Provided are assay systems and associated consumables, wherein the assay system adjusts one or more steps of an assay protocol based on consumable data specific for that consumable. Various types of consumable data are described, as well as methods of using such data in the conduct of an assay by an assay system. The present invention also relates to consumables (e.g., kits and reagent containers), software, data deployable bundles, computer-readable media, loading carts, instruments, systems, and methods, for performing automated biological assays.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a gate structure formed on the substrate; a source region and a drain region formed in the substrate on either side of the gate structure, the source region and the drain region both having a first type of conductivity; and a dielectric layer having a first portion and a second portion, wherein the first portion of the dielectric layer is formed on a portion of the gate structure, and the second portion of the dielectric layer is formed on the substrate and extending to a portion of the drain region, wherein the dielectric layer includes at least one recess on the second portion. An associated fabricating method is also disclosed.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.