Abstract: A semiconductor device includes a first memory cell array that includes memory cells for storing data and is managed on a sector basis, a second memory cell array including memory cells storing sector protection information on the sector basis, and a control circuit checking the sector protection information stored in the second memory cell array whenever the sector to be programmed or erased is selected. Thus, the sector protection information in all the sectors does not have to be latched at the time of power on. The latch circuit equal in number to the sector does not have to be provided. It is thus possible to reduce the number of the circuits drastically and the chip area can be reduced.

Abstract: The semiconductor device of the present invention includes a column decoder (select and write circuit), which selects multiple pages that are not located adjacently to each other so as to simultaneously program multiple bits in the memory cells of the selected page, when the multiple bits are programmed in the multiple pages. The page is a selection unit and is composed of a given number of the memory cells located on a same word line. An unnecessary stress of programming is not applied to the memory cells that are not to be programmed, by increasing the distance between the memory cells to be programmed simultaneously.

Abstract: The semiconductor device of the present invention includes at least one dummy cell of a programmed state proximately located to an edge of a reference cell array. Thus, the leak current does not flow when a data of the cell on the edge of the reference cell array is read out. The memory cell located around the center of the reference cell array has neighboring cells of the programmed state, and the leak current can be prevented when the data is read out from all the reference cells. Thus, the reference current can be supplied stably.

Abstract: A semiconductor device includes a first memory cell array that includes memory cells for storing data and is managed on a sector basis, a second memory cell array including memory cells storing sector protection information on the sector basis, and a control circuit checking the sector protection information stored in the second memory cell array whenever the sector to be programmed or erased is selected. Thus, the sector protection information in all the sectors does not have to be latched at the time of power on. The latch circuit equal in number to the sector does not have to be provided. It is thus possible to reduce the number of the circuits drastically and the chip area can be reduced.

Abstract: The semiconductor device of the present invention includes at least one dummy cell of a programmed state proximately located to an edge of a reference cell array. Thus, the leak current does not flow when a data of the cell on the edge of the reference cell array is read out. The memory cell located around the center of the reference cell array has neighboring cells of the programmed state, and the leak current can be prevented when the data is read out from all the reference cells. Thus, the reference current can be supplied stably.

Abstract: The semiconductor device includes a memory cell array that includes memory cells for storing data and is managed on a sector basis, a memory that stores the information determining the activation status, a latch circuit that latches the activation information according to the information stored in the memory, and a circuit that latches the activation information according to the information stored in the memory in the latch circuit. The activation information according to the memory state of the memory is latched at the time of inputting a given command after activation, and it is thus possible to read the information stored in the memory and set the information in the latch circuit certainly.

Abstract: The semiconductor device of the present invention includes a column decoder (select and write circuit), which selects multiple pages that are not located adjacently to each other so as to simultaneously program multiple bits in the memory cells of the selected page, when the multiple bits are programmed in the multiple pages. The page is a selection unit and is composed of a given number of the memory cells located on a same word line. An unnecessary stress of programming is not applied to the memory cells that are not to be programmed, by increasing the distance between the memory cells to be programmed simultaneously.

Abstract: A nonvolatile memory has a plurality of memory cells, each of the memory cells having a first and a second source/drain areas, a control gate, and an insulating trap layer disposed between the control gate and a channel area lying between the first and the second source/drain areas. The trap layer includes a use bit area in proximity to the first source/drain area, for storing data depending on the presence or absence of electric charge to be trapped, and a non-use bit area in proximity to the second source/drain area, in which the electric charge is trapped while data is held in the use bit area. Preferably, in the state where erasing operation is completed, the non-use bit area is brought into a state where electric charge is trapped therein.

Abstract: A semiconductor memory that prevents a decrease in margin at read time. A bit line in a floating state between a drain in a memory cell to be read and a charged bit line is charged for a certain period of time.

Abstract: An aluminum alloy according to the present invention includes from 4.0 to 6.0% Mg, from 0.3 to 0.6% Mn, from 0.5 to 0.9% Fe, and the balance of Al and inevitable impurities when the entirety is taken as 100% by mass. By appropriately selecting the composition range of Mg, Mn and Fe, it has been possible to micro-finely crystallize Al (Mn, Fe) compounds while inhibiting the growth of primary-crystal Al. As a result, the resulting aluminum alloy is good in terms of the castability, and shows high strength as well as high ductility.

Abstract: A mobile communication terminal is provided with a light-emitting element for notifying an unanswered incoming call. When the cancellation of an incoming call is canceled in a state where an incoming call response operation has not been carried out, the mobile communication terminal is brought into the standby state and then the light-emitting element is caused to emit light.

Abstract: Strains showing favorable growth in a medium containing 6-ethoxypurine are selected from a population of Bacillus bacteria, and a strain showing high inosine-producing ability is selected from the obtained strains to obtain a Bacillus bacterium having improved inosine-producing ability.

Abstract: A non-volatile semiconductor storage device provided with a boost circuit for setting, for at least a certain period of time, a source line selectively connected to a memory cell to a negative potential, when reading out data from the memory cell is disclosed.

Abstract: A nonvolatile memory has a plurality of memory cells, each of the memory cells having a first and a second source/drain areas, a control gate, and an insulating trap layer disposed between the control gate and a channel area lying between the first and the second source/drain areas. The trap layer includes a use bit area in proximity to the first source/drain area, for storing data depending on the presence or absence of electric charge to be trapped, and a non-use bit area in proximity to the second source/drain area, in which the electric charge is trapped while data is held in the use bit area. Preferably, in the state where erasing operation is completed, the non-use bit area is brought into a state where electric charge is trapped therein.

Abstract: In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.

Abstract: A semiconductor memory device has 2n word lines, a plurality of bit lines, a plurality of nonvolatile memory cells disposed at each intersection of the word lines and the bit lines, a write circuit for writing data to a memory cell located at an intersection of selected ones of the word lines and the bit lines, and a sense amplifier for reading data out of the memory cells. Further, the semiconductor memory device comprises a first unit for simultaneously selecting a block of 2m (n>m) word lines among the 2n word lines, and a second unit for not selecting a block of 2k (m>k) word lines among the 2m word lines. The second unit does not select the block of 2k word lines, and selects a block of 2k word lines prepared outside the 2n word lines when any one of the 2k word lines among the 2m word lines is defective. Consequently, redundant word lines are effectively employed, write and verify operations are stable, and thereby the yield and performance of the semiconductor memory device are improved.

Abstract: A semiconductor memory that prevents a decrease in margin at read time. A bit line in a floating state between a drain in a memory cell to be read and a charged bit line is charged for a certain period of time.

Abstract: A mobile communication terminal is provided with a light-emitting element for notifying an unanswered incoming call. When the cancellation of an incoming call is canceled in a state where an incoming call response operation has not been carried out, the mobile communication terminal is brought into the standby state and then the light-emitting element is caused to emit light.

Abstract: In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell.

Abstract: A semiconductor memory device has 2n word lines, a plurality of bit lines, a plurality of nonvolatile memory cells disposed at each intersection of the word lines and the bit lines, a write circuit for writing data to a memory cell located at an intersection of selected ones of the word lines and the bit lines, and a sense amplifier for reading data out of the memory cells. Further, the semiconductor memory device comprises a first unit for simultaneously selecting a block of 2m (n>m) word lines among the 2n word lines, and a second unit for not selecting a block of 2k (m>k) word lines among the 2m word lines. The second unit does not select the block of 2k word lines, and selects a block of 2k word lines prepared outside the 2n word lines when any one of the 2k word lines among the 2m word lines is defective. Consequently, redundant word lines are effectively employed, write and verify operations are stable, and thereby the yield and performance of the semiconductor memory device are improved.