Abstract: Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.

Abstract: Pumping liners for process chambers including a first ring-shaped body and a second ring-shaped body are described. The first ring-shaped body has a first plurality of openings and the second ring-shaped body has a second plurality of openings. The first ring-shaped body and the second ring-shaped body are rotatable relative to each other around a central axis to at least partially overlap the first plurality of openings and the second plurality of openings to change the area of conductance through the openings. Methods of removing gases from a processing chamber are also described.

Abstract: Embodiments described herein relate to a valve for semiconductor processing. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes a motor, a transmission link coupled to the motor, a rotatable ring surrounding a fixed plate and separated by a dynamic seal, the rotatable ring coupled to the transmission link, and one or more shutter plates movably coupled to the rotatable ring by a respective pivotable fastener, wherein the fixed plate includes an opening and the one or more shutter plates are movable relative to the opening.

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Abstract: Methods and apparatus to reduce pressure fluctuations in a chemical delivery system for a process chamber are provided herein. In some embodiments, a chemical delivery system for a process chamber, includes: a carrier gas supply; an ampoule fluidly coupled to the carrier gas supply via a first supply line, wherein the ampoule is configured to supply one or more process gases to the process chamber via a second supply line; an inlet valve disposed in line with the first supply line to control a flow of a carrier gas from the carrier gas supply to the ampoule; and a first control valve disposed in line with a pressure regulation line, wherein the pressure regulation line is fluidly coupled to the first supply line at a tee location between the carrier gas supply and the inlet valve.

Abstract: Embodiments of the present disclosure generally relate chamber lids and methods of using such for gas-phase particle reduction. In an embodiment is provided a chamber lid that includes a top wall, a bottom wall, a plurality of vertical sidewalls, and an interior volume within the chamber lid defined by the top wall, the bottom wall, and the plurality of vertical sidewalls. The chamber lid further includes a plurality of air flow apertures, wherein the plurality of air flow apertures is configured to fluidly communicate air into the interior volume and out of the interior volume, and a mesh disposed on a face of at least one of the air flow apertures of the plurality of air flow apertures. In another embodiment is provided a method of processing a substrate in a substrate processing chamber, the substrate processing chamber comprising a chamber lid as described herein.

Abstract: Embodiments described herein relate to a valve for semiconductor processing. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes a motor, a transmission link coupled to the motor, a rotatable ring surrounding a fixed plate and separated by a dynamic seal, the rotatable ring coupled to the transmission link, and one or more shutter plates movably coupled to the rotatable ring by a respective pivotable fastener, wherein the fixed plate includes an opening and the one or more shutter plates are movable relative to the opening.

Abstract: Embodiments of process kits for us in a substrate processing chamber are provided herein. In some embodiments, a process kit for use in a substrate processing chamber includes an annular body configured to surround a substrate support and having an upper portion, a lower portion, and a central opening through the upper portion and the lower portion, wherein the upper portion includes sidewalls coupled to an upper flange that defines an outer diameter of the annular body, wherein the upper portion includes a plurality of first holes disposed through the sidewalls, and wherein the upper portion includes one or more heating elements; and a shield disposed about the annular body, wherein the shield includes an exhaust port fluidly connected to the plurality of first holes.

Abstract: Embodiments provided herein generally relate to a processing system and a method of controlling conductance in a processing system. The processing system and method disclosed herein allow for control of gas ratios within the processing system, while still maintaining a high level of conductance. The processing system includes a purge gas valve configured to pulse a flow of foreline purge gas. The method includes pulsing the foreline purge gas. The method is contained in a computer readable medium. The pulsed foreline purge gas can maintain a ratio of process purge gas and the process gas in the processing region.

Abstract: Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The delivery channel is separated into a plurality of zones by partitions. Each of the plurality of zones has an inlet and an outlet.

Abstract: Embodiments of the present disclosure generally relate to an apparatus for improving the film thickness a substrate when using a heated substrate support. A cover plate to be placed over the top surface of a heated substrate support is disclosed. The cover plate includes a pocket formed in the middle thereof for the placement of a substrate. The cover plate may include a variety of features including a plurality of dimples, a plurality of radially disposed grooves, a plurality of annular grooves, lift pin holes, pin slots, and gas exhaust holes.

Abstract: Gas distribution assemblies and process chamber comprising gas distribution assemblies are described. The gas distribution assembly includes a gas distribution plate, a lid and a primary O-ring. The primary O-ring is positioned between a purge channel of a first contact surface of the gas distribution plate and a second contact surface. Methods of sealing a process chamber using the disclosed gas distribution assemblies are described.

Abstract: Gas delivery systems and methods of delivering a process gas are described. The gas delivery system includes an inert gas line and a first reactive gas line connected to a gas line with a purge gas flow. The flows of inert gas and first reactive gas are controlled so that the pressure at the end of the gas line remains substantially constant.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lid for a substrate processing chamber includes: a lid plate comprising an upper surface and a contoured bottom surface, the upper surface having a central opening and the contoured bottom surface having a first portion that extends downwardly and outwardly from the central opening to a peripheral portion of the lid plate and a second portion that extends radially outward along the peripheral portion of the lid plate; an upper flange extending radially outward from the lid plate; and one or more channels formed through the lid plate from the upper surface of the lid plate to the second portion of the contoured bottom surface.

Abstract: Connector assemblies for holding two tubes together and methods of use are described. The connector assemblies have an inner bolt, a split outer bolt comprising at least two outer bolt sections and a clamp bolt. The clamp bolt holds the outer bolt sections together to form the split outer bolt and the inner bolt is screwed into the outer bolt to enclose the two tube ends.

Abstract: Embodiments of showerheads for use in a process chamber are provided herein. In some embodiments, a showerhead includes a first spiral channel extending from a central region to a peripheral region of the showerhead; a second spiral channel extending from a central region to a peripheral region of the showerhead, wherein the second spiral channel is interleaved with the first spiral channel and fluidly independent from the first spiral channel; a plurality of first channels extending from the first spiral channel to a plurality of first gas distribution holes on a lower surface of the showerhead, wherein each first channel is a singular channel extending at an angle; and a plurality of second channels extending from the second spiral channel to a plurality of second gas distribution holes on the lower surface of the showerhead, wherein each second channel is a singular channel extending at an angle.