Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.

Abstract: Embodiments of a slip ring for use in a rotatable substrate support are provided herein. In some embodiments a slip ring includes a main body having a top wall, a bottom wall, and a sidewall extending between the top and bottom walls, wherein the top wall, bottom wall, and sidewall define an inner volume within the main body, wherein a central opening is formed through the top wall; a plurality of annular containers disposed within the inner volume and coaxially with the main body, wherein the plurality of annular containers are vertically spaced apart from one another, and wherein each of the plurality of annular containers contains a first volume of an electrically conductive liquid; an upper cylindrical body rotatably disposed in the central opening; a lower cylindrical body fixedly coupled to the lower wall of the main body.

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 1:2 to about 1:1.6.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300 ?-in Ra, or an emissivity (?) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract: Methods and apparatus for delivering precursor materials derived from liquid chemicals to a process chamber are provided herein. In some embodiments, a liquid chemical delivery apparatus includes: a body having an inner volume to hold a liquid chemical, an inlet to receive a carrier gas into the inner volume, and an outlet to flow the carrier gas from the inner volume, wherein a bottom of the inner volume includes a reduced volume portion; and a level sensor configured to detect a level of the liquid chemical in the reduced volume portion.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300?-in Ra, or an emissivity (?) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body; a chamber lid assembly having a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; and a gas distribution plate disposed below the lid plate and having a plurality of apertures disposed through the gas distribution plate.

Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.

Abstract: Methods and apparatus for delivering precursor materials derived from liquid chemicals to a process chamber are provided herein. In some embodiments, a liquid chemical delivery apparatus includes: a body having an inner volume to hold a liquid chemical, an inlet to receive a carrier gas into the inner volume, and an outlet to flow the carrier gas from the inner volume, wherein a bottom of the inner volume includes a reduced volume portion; and a level sensor configured to detect a level of the liquid chemical in the reduced volume portion.

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.