Patents by Inventor Munehiro Azami

Munehiro Azami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9590632
    Abstract: A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD?V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD.
    Type: Grant
    Filed: May 4, 2015
    Date of Patent: March 7, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shou Nagao, Munehiro Azami, Yoshifumi Tanada
  • Publication number: 20170030717
    Abstract: According to one aspect of an embodiment, an estimating apparatus includes a detector that detects accelerations. The estimating apparatus includes an identifying unit that identifies a gravity direction using an average of the accelerations that the detector detects in a certain state. The estimating apparatus includes an estimating unit that estimates a travel direction based on the gravity direction that the identifying unit identifies from the accelerations that the detector detects.
    Type: Application
    Filed: June 27, 2016
    Publication date: February 2, 2017
    Applicant: YAHOO JAPAN CORPORATION
    Inventor: Munehiro AZAMI
  • Publication number: 20160343319
    Abstract: A novel driving method is provided in which source line inverting drive or dot inverting drive is performed for a case of driving a plurality of source lines by one D/A converter circuit in a source signal line driver circuit of an active matrix image display drive that corresponds to digital image signal input. In a first driving method of the present invention, two systems of grey-scale electric power supply lines are supplied to a source signal line driver circuit in order to obtain output having differing polarities from a D/A converter circuit, switches for connecting to the two systems of grey-scale electric power supply lines are prepared in each D/A converter circuit, the grey-scale electric power supply lines connected to each D/A converter circuit are switched in accordance with a control signal input to the switches, and source line inverting drive or dot inverting drive are performed.
    Type: Application
    Filed: August 4, 2016
    Publication date: November 24, 2016
    Inventor: Munehiro AZAMI
  • Patent number: 9496291
    Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node ? rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: November 15, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
  • Patent number: 9439165
    Abstract: A position identification server according to the present application includes a storage unit that stores coefficients of parameters of a discriminant function that indicates whether or not a terminal device is located on each floor and a maximum value of pre-measured radio wave strength of each base station on each floor, a communication unit that receives an actual measurement value of radio wave strength of radio waves received by the terminal device from the base station, and a discrimination unit that calculates the parameters of the discriminant function for each floor based on the actual measurement value of radio wave strength received by the communication unit and the maximum value of radio wave strength stored in the storage unit, calculates a solution of the discriminant function for each floor based on the calculated parameters and the coefficients of the parameters stored in the storage unit, and when there are floors where the solution of the discriminant function is greater than or equal to a p
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: September 6, 2016
    Assignee: YAHOO JAPAN CORPORATION
    Inventor: Munehiro Azami
  • Publication number: 20160240600
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Application
    Filed: April 21, 2016
    Publication date: August 18, 2016
    Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Patent number: 9412309
    Abstract: A novel driving method is provided in which source line inverting drive or dot inverting drive is performed for a case of driving a plurality of source lines by one D/A converter circuit in a source signal line driver circuit of an active matrix image display drive that corresponds to digital image signal input. In a first driving method of the present invention, two systems of grey-scale electric power supply lines are supplied to a source signal line driver circuit in order to obtain output having differing polarities from a D/A converter circuit, switches for connecting to the two systems of grey-scale electric power supply lines are prepared in each D/A converter circuit, the grey-scale electric power supply lines connected to each D/A converter circuit are switched in accordance with a control signal input to the switches, and source line inverting drive or dot inverting drive are performed.
    Type: Grant
    Filed: February 26, 2015
    Date of Patent: August 9, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Munehiro Azami
  • Patent number: 9344853
    Abstract: A position specifying server includes a storage unit, a communication unit, an estimation unit, and a specifying unit. The storage unit stores GMMs corresponding to base stations of radio waves receivable by a terminal device on each floor. The communication unit receives measured values of the radio wave strengths of the radio waves which the terminal device receives from the base stations. The estimation unit estimates a position of the terminal device for each floor based on the received measured values of the radio wave strengths and the GMMs. The specifying unit calculates the estimated values of the radio wave strengths at the estimated position of the terminal device on each floor based on the GMMs and specifies the floor on which the terminal device is present based on the calculated estimated values of the radio wave strengths and the measured values of the radio wave strengths.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: May 17, 2016
    Assignee: YAHOO JAPAN CORPORATION
    Inventor: Munehiro Azami
  • Patent number: 9324775
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: April 26, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Publication number: 20160043158
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Application
    Filed: October 23, 2015
    Publication date: February 11, 2016
    Inventors: Shunpei YAMAZAKI, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Publication number: 20150340378
    Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node ? rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.
    Type: Application
    Filed: August 3, 2015
    Publication date: November 26, 2015
    Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
  • Publication number: 20150317941
    Abstract: A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD?V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD.
    Type: Application
    Filed: May 4, 2015
    Publication date: November 5, 2015
    Inventors: Shou Nagao, Munehiro Azami, Yoshifumi Tanada
  • Patent number: 9171896
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Grant
    Filed: February 5, 2015
    Date of Patent: October 27, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Patent number: 9136385
    Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD?GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: September 15, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
  • Patent number: 9117415
    Abstract: A display device comprises a display panel composed of a pixel portion in which a plurality of TFTs are arranged in matrix, a source driver, and a gate driver, an image signal processing circuit for processing an image signal input from an external, and a control circuit for controlling the display panel and the image signal processing circuit. The image signal processing circuit corrects the image signal on the basis of a correction table. By feeding the display panel with the corrected image signal, the display device can provide a good quality image.
    Type: Grant
    Filed: April 27, 2005
    Date of Patent: August 25, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masaaki Hiroki, Munehiro Azami, Mitsuaki Osame, Yutaka Shionoiri, Shou Nagao
  • Patent number: 9105520
    Abstract: A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node ? rises. When the potential of the node ? reaches (VDD?VthN), the node ? became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: August 11, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
  • Publication number: 20150170580
    Abstract: A novel driving method is provided in which source line inverting drive or dot inverting drive is performed for a case of driving a plurality of source lines by one D/A converter circuit in a source signal line driver circuit of an active matrix image display drive that corresponds to digital image signal input. In a first driving method of the present invention, two systems of grey-scale electric power supply lines are supplied to a source signal line driver circuit in order to obtain output having differing polarities from a D/A converter circuit, switches for connecting to the two systems of grey-scale electric power supply lines are prepared in each D/A converter circuit, the grey-scale electric power supply lines connected to each D/A converter circuit are switched in accordance with a control signal input to the switches, and source line inverting drive or dot inverting drive are performed.
    Type: Application
    Filed: February 26, 2015
    Publication date: June 18, 2015
    Inventor: Munehiro AZAMI
  • Publication number: 20150155348
    Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
    Type: Application
    Filed: February 5, 2015
    Publication date: June 4, 2015
    Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
  • Patent number: 9024930
    Abstract: A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD?V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD.
    Type: Grant
    Filed: January 3, 2008
    Date of Patent: May 5, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shou Nagao, Munehiro Azami, Yoshifumi Tanada
  • Publication number: 20150111598
    Abstract: A position identification server according to the present application includes a storage unit that stores coefficients of parameters of a discriminant function that indicates whether or not a terminal device is located on each floor and a maximum value of pre-measured radio wave strength of each base station on each floor, a communication unit that receives an actual measurement value of radio wave strength of radio waves received by the terminal device from the base station, and a discrimination unit that calculates the parameters of the discriminant function for each floor based on the actual measurement value of radio wave strength received by the communication unit and the maximum value of radio wave strength stored in the storage unit, calculates a solution of the discriminant function for each floor based on the calculated parameters and the coefficients of the parameters stored in the storage unit, and when there are floors where the solution of the discriminant function is greater than or equal to a p
    Type: Application
    Filed: July 11, 2014
    Publication date: April 23, 2015
    Inventor: Munehiro AZAMI