Patents by Inventor Munehiro Azami
Munehiro Azami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8325170Abstract: An occupying area of a digital system signal line driver circuit in an image display device is large and this hinders the miniaturization of the display device. A memory circuit and a D/A converter circuit in the signal line driver circuit are commonly used for n (“n” is a natural number equal to or larger than 2) signal lines. One horizontal scanning period is divided into n periods and the memory circuit and the D/A converter circuit each perform processing for different signal lines during each of the divided periods. Thus, all the signal lines can be driven. Therefore, the number of memory circuits and the number of D/A converter circuits in the signal line driver circuit can be reduced to one n-th in a conventional case.Type: GrantFiled: December 16, 2009Date of Patent: December 4, 2012Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki KaishaInventors: Yukio Tanaka, Munehiro Azami, Yasushi Kubota, Hajime Washio
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Publication number: 20120286320Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: ApplicationFiled: July 23, 2012Publication date: November 15, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Patent number: 8284151Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.Type: GrantFiled: March 3, 2011Date of Patent: October 9, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 8264445Abstract: A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node á rises. When the potential of the node á reaches (VDD?VthN), the node á became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105. An output at the subsequent stage is then inputted to TFTs 102 and 103 to turn the TFTs 102 and 103 ON, while the potential of the node á drops down to turn the TFT 105 OFF.Type: GrantFiled: October 8, 2009Date of Patent: September 11, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 8237179Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: GrantFiled: September 23, 2011Date of Patent: August 7, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Publication number: 20120133437Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.Type: ApplicationFiled: February 7, 2012Publication date: May 31, 2012Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
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Patent number: 8149018Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.Type: GrantFiled: November 5, 2010Date of Patent: April 3, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
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Publication number: 20120012888Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: ApplicationFiled: September 23, 2011Publication date: January 19, 2012Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Patent number: 8039853Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: GrantFiled: September 10, 2010Date of Patent: October 18, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Publication number: 20110149189Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.Type: ApplicationFiled: March 3, 2011Publication date: June 23, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 7903079Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.Type: GrantFiled: September 2, 2009Date of Patent: March 8, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Publication number: 20110043254Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.Type: ApplicationFiled: November 5, 2010Publication date: February 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
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Publication number: 20110006306Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: ApplicationFiled: September 10, 2010Publication date: January 13, 2011Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Patent number: 7847598Abstract: A sense amplifier according to the present invention for detecting a potential difference of signals input to a first input terminal and a second input terminal, includes a first means for applying voltages corresponding to threshold voltages of first and second transistors to gate-source voltages of the first and second transistors, and a second means for transferring signals input to the first and second input terminals to gates of the first and second transistors. In this case, a threshold variation of the first and second transistors is corrected.Type: GrantFiled: May 21, 2009Date of Patent: December 7, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yutaka Shionoiri, Kiyoshi Kato, Munehiro Azami
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Patent number: 7808002Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.Type: GrantFiled: July 3, 2007Date of Patent: October 5, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Tatsuya Arao, Munehiro Azami
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Publication number: 20100201556Abstract: A novel driving method is provided in which source line inverting drive or dot inverting drive is performed for a case of driving a plurality of source lines by one D/A converter circuit in a source signal line driver circuit of an active matrix image display drive that corresponds to digital image signal input. In a first driving method of the present invention, two systems of grey-scale electric power supply lines are supplied to a source signal line driver circuit in order to obtain output having differing polarities from a D/A converter circuit, switches for connecting to the two systems of grey-scale electric power supply lines are prepared in each D/A converter circuit, the grey-scale electric power supply lines connected to each D/A converter circuit are switched in accordance with a control signal input to the switches, and source line inverting drive or dot inverting drive are performed.Type: ApplicationFiled: April 16, 2010Publication date: August 12, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventor: Munehiro AZAMI
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Patent number: 7710384Abstract: A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node á rises. When the potential of the node á reaches (VDD?VthN), the node á became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105. An output at the subsequent stage is then inputted to TFTs 102 and 103 to turn the TFTs 102 and 103 ON, while the potential of the node á drops down to turn the TFT 105 OFF.Type: GrantFiled: May 25, 2006Date of Patent: May 4, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada
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Patent number: 7710375Abstract: A novel driving method is provided in which source line inverting drive or dot inverting drive is performed for a case of driving a plurality of source lines by one D/A converter circuit in a source signal line driver circuit of an active matrix image display drive that corresponds to digital image signal input. In a first driving method of the present invention, two systems of grey-scale electric power supply lines are supplied to a source signal line driver circuit in order to obtain output having differing polarities from a D/A converter circuit, switches for connecting to the two systems of grey-scale electric power supply lines are prepared in each D/A converter circuit, the grey-scale electric power supply lines connected to each D/A converter circuit are switched in accordance with a control signal input to the switches, and source line inverting drive or dot inverting drive are performed.Type: GrantFiled: August 3, 2006Date of Patent: May 4, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Munehiro Azami
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Publication number: 20100090994Abstract: An occupying area of a digital system signal line driver circuit in an image display device is large and this hinders the miniaturization of the display device. A memory circuit and a D/A converter circuit in the signal line driver circuit are commonly used for n (“n” is a natural number equal to or larger than 2) signal lines. One horizontal scanning period is divided into n periods and the memory circuit and the D/A converter circuit each perform processing for different signal lines during each of the divided periods. Thus, all the signal lines can be driven. Therefore, the number of memory circuits and the number of D/A converter circuits in the signal line driver circuit can be reduced to one n-th in a conventional case.Type: ApplicationFiled: December 16, 2009Publication date: April 15, 2010Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yukio Tanaka, Munehiro Azami, Yasushi Kubota, Hajime Washio
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Publication number: 20100073348Abstract: A drive circuit of a display device, which comprise only single conductive TFTs and in which amplitude of an output signal is normal, is provided. A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node á rises. When the potential of the node á reaches (VDD?VthN), the node á became in a floating state. Accordingly, a TFT 105 then turns ON, and potential of an output node rises as a clock signal reaches the level H. On the other hand, potential of a gate electrode of the TFT 105 further rises due to an operation of capacitance 107 as the potential of the output node rises, so that the potential of the output node would be higher than (VDD+VthN). Thus, the potential of the output node rises to VDD without voltage drop caused by a threshold of the TFT 105. An output at the subsequent stage is then inputted to TFTs 102 and 103 to turn the TFTs 102 and 103 ON, while the potential of the node á drops down to turn the TFT 105 OFF.Type: ApplicationFiled: October 8, 2009Publication date: March 25, 2010Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Munehiro Azami, Shou Nagao, Yoshifumi Tanada