Abstract: A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.

Abstract: An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Abstract: An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n.

Abstract: A small-sized, low-loss load drive circuit, an integrated circuit for that drive circuit, and an inexpensive plasma display using that integrated circuit. In the load drive circuit that responds to switching commands to supply a high or low voltage to a load by switching, the source-drain voltage of an output-stage n-type MOS transistor of a flip-flop is supplied between the gate and cathode of a main IGBT. In order to hold this voltage, the power source to the flip-flop is supplied from a main power source or a charge pump power circuit connected at the fixed potential point of the main power source. In addition, a discharge prevention circuit and discharge prevention elements and are provided in order that the potential of the power source can be maintained higher than the positive potential of main power source.

Abstract: An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.

Abstract: An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9. The gate voltage of IGBT 5a, which is a main-current switching device, can be decremented.

Abstract: Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.

Abstract: Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.

Abstract: An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Abstract: An MIS gate type semiconductor device having a low resistive loss in the ON state and a wide safe operation region is disclosed. In this semiconductor device, the p-base layer of the thyristor and the emitter electrode are connected together using a suitable nonlinear device. As a result, lower loss and higher capacity of the semiconductor device can be realized in order not only to make it easy to turn ON the thyristor but also to make the safe operation region wide.

Abstract: A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

Abstract: A circuit for supplying an oscillation suppress current is provided between a collector terminal and gate electrode of a main IGBT. The current supply circuit comprises a resistor and a diode which are connected in series. A bypass MOSFET is connected between the series connection and the emitter terminal. No semiconductor element having different temperature characteristics is provided in the current supply circuit.

Abstract: The object of this invention is to provide a solar cell apparatus which can prevent occurrences of peeling, warping and cracking of a film due to a temperature change in heating and cooling, etc. in a production process of a large-area solar cell panel and can cause an absence of a development of defects in the production process, a production method of the solar cell apparatus, a metal plate for the solar cell apparatus, and a power generating plant. According to this invention, there is provided a solar cell apparatus containing a metal substrate, two silicon layers, one of the two silicon layers being formed in contact with a part of one surface of the metal substrate, a plurality of electrodes formed in contact with the other of the silicon layers, an external terminal formed on the other surface of the metal substrate, and an external terminal formed in contact with the electrode.

Abstract: A power source apparatus includes a first switching element for controlling the power feed in the direction from a high-voltage battery to an inverter, and a second switching element for the power feed in the direction from the inverter to a low-voltage battery, and the voltage at the direct current side is controlled to be higher than that of the high-voltage battery when a battery controller for controlling the first and second switching elements breaks down.

Abstract: An MIS gate type semiconductor device having a low resistive loss in the ON state and a wide safe operation region is disclosed. In this semiconductor device, the p-base layer of the thyristor and the emitter electrode are connected together using a suitable nonlinear device. As a result, lower loss and higher capacity of the semiconductor device can be realized in order not only to make it easy to turn ON the thyristor but also to make the safe operation region wide.

Abstract: A circuit for supplying an oscillation suppress current is provided between a collector terminal and gate electrode of a main IGBT. The current supply circuit comprises a resistor and a diode which are connected in series. A bypass MOSFET is connected between the series connection and the emitter terminal. No semiconductor element having different temperature characteristics is provided in the current supply circuit.

Abstract: A circuit for supplying an oscillation suppress current is provided between a collector terminal and gate electrode of a main IGBT. The current supply circuit comprises a resistor and a diode which are connected in series. A bypass MOSFET is connected between the series connection and the emitter terminal. No semiconductor element having different temperature characteristics is provided in the current supply circuit.

Abstract: In a semiconductor device having a first terminal 101 (source terminal) and a second terminal 102 (drain terminal), the substrate main surface of a semiconductor chip is on the (110) face, the main contact face of an n-type region 2 and a p-type region 4 is the {111} face perpendicular to the (110) face, elongated n-type regions 2 and elongated p-type regions 4, which are arranged alternately, form a voltage holding area. The first terminal 101 is connected to the p-type regions through wiring, and the second terminal 102 is connected to the n-type regions 2. Also, the p-type region is formed to cover the bottom comers of a gate polycrystalline silicon layer 8.

Abstract: A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.

Abstract: A circuit incorporated IGBT is provided with a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other. In a semiconductor layer of one conductivity type in which a circuit element is formed in the circuit area, there is provided another semiconductor layer of another conductivity type which adjoins the circuit element and has an impurity concentration higher than that of the semiconductor layer of the one conductivity type. An electrode contacts the other semiconductor layer and is connected to an electrode of the IGBT. Carriers are ejected from the other semiconductor layer to the electrode of the IGBT, thereby making it possible to prevent an erroneous operation of the circuit.