Publication number: 20230215965
Abstract: A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80?a1?2.20, 0.005?b1?0.05, 0?c1?0.20, and 0.60?d1?1.00.
Type:
Application
Filed:
March 10, 2023
Publication date:
July 6, 2023
Inventors:
Kazushige Yamamoto, Yukitami Mizuno, Yuya Honishi, Soichiro Shibasaki, Naoyuki Nakagawa, Yasutaka Nishida, Mutsuki Yamazaki
Patent number: 11581444
Abstract: The solar cell of embodiments includes a transparent first electrode, a photoelectric conversion layer mainly containing cuprous oxide on the first electrode, an n-type layer on the photoelectric conversion layer, and a transparent second electrode on the n-type layer. A mixed region or/and a mixed layer are present on the n-type layer side of the photoelectric conversion layer, and the mixed region and the mixed layer contain elements belonging to a first group, a second group, and a third group. The first group is one or more elements selected from the group consisting of Zn and Sn, the second group is one or more elements selected from the group consisting of Y, Sc, V, Cr, Mn, Fe, Ni, Zr, B, Al, Ga, Nb, Mo, Ti, F, Cl, Br, and I, and the third group is one or more elements selected from the group consisting of Ge and Si.
Type:
Grant
Filed:
November 15, 2021
Date of Patent:
February 14, 2023
Assignees:
KABUSHIKI KAISHA TOSHIBA, TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION
Inventors:
Kazushige Yamamoto, Soichiro Shibasaki, Mutsuki Yamazaki, Naoyuki Nakagawa, Yuya Honishi, Sara Yoshio, Yoshiko Hiraoka