Abstract: A thermal insulation waveguide between a high-temperature unit and a low-temperature unit in a vacuum, chamber of an embodiment, the thermal insulation waveguide includes, a first substrate including a first line in the high-temperature unit, a second substrate including a second line in the low temperature unit, and a thermal insulation element connecting the substrates, and including a third line including an inductance component and connecting the first and second lines. The first substrate includes a first capacitor unit connected with the first line. The second substrate includes a second capacitor unit connected with the second line.

Abstract: A photoelectric conversion element of an embodiment includes a first electrode, a second electrode, and a light-absorbing layer containing a chalcopyrite-type compound containing a group Ib element, a group IIIb element, and a group VIb element between the first electrode and the second electrode. A region in which concentration of the group Ib element in the light-absorbing layer is from 0.1 to 10 atom %, both inclusive, is included in a region up to a depth of 10 nm in a direction from a principal plane of the light-absorbing layer on a side of the second electrode to a side of the first electrode.

Abstract: A photoelectric conversion element of an embodiment includes a substrate, a transparent first electrode on the substrate, a second electrode, and a light absorbing layer of a homo-junction type interposed between the first electrode and the second electrode. The light absorbing layer includes a p-type region on the second electrode side and an n-type region on the first electrode side. The n-type region has an n-type dopant. The photoelectric conversion element has a boundary surface between the light absorbing layer on the n-type region side and the first electrode.

Abstract: A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region.

Abstract: A superconducting filter device of an embodiment includes: a high-frequency filter includes a superconducting element, and a dielectric member; and a drive tool configured to adjust a distance between the superconducting element and the dielectric member. The dielectric member and the drive tool take both a connection state and a separation state.

Abstract: According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p+-region including a surface on a side opposite to a light incident surface. The n-electrode is connected to an n+-region including the surface on the side opposite to the light incident surface. The p-electrodes oppose each other or the n-electrodes oppose each other in a region where the multiple second photoelectric conversion elements are adjacent to each other.

Abstract: A photoelectric conversion device of an embodiment has a bottom electrode, an intermediate layer on the bottom electrode, a p-type light absorbing layer on the intermediate layer, and an n-type layer on the p-type light absorbing layer. The bottom electrode is a first metal film or a semiconductor film. When the bottom electrode is a metal film, the intermediate layer comprises an oxide film or a sulfide film. When the bottom electrode is a semiconductor film, the intermediate layer comprises a second metal film and an oxide film or a sulfide film on the second metal film.

Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered.

Abstract: A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. nA and nB satisfy the relation 100/110?nB/nA?110/100. nA is the refractive index of the transparent electrode. nB is the refractive index of the oxide layer.

Abstract: A photoelectric conversion device of an embodiment has a bottom electrode, a light absorbing layer on the bottom electrode. The light absorbing layer comprises a thin film of a semiconductor comprising a group Ib element or elements, a group IIIb element or elements, and a group VIb element or elements and having a chalcopyrite structure. The light absorbing layer has an average crystal grain size of 1.5 ?m or more. The group IIIb element or elements include Ga, Al, or both of Ga and Al.

Abstract: According to one embodiment, a multiband filter includes a first resonator and a second resonator. The first resonator has a first capacitive component and a first inductive component. A signal of a first frequency is inputted to the first resonator. The second resonator has a second capacitive component and a second inductive component. A signal of a second frequency is inputted to the second resonator. The second frequency is different from the first frequency. A distance between a first capacitive component of the first resonator and a second capacitive component of the second resonator and a distance between a first inductive component of the first resonator and a second inductive component of the second resonator is longer than a shortest distance out of a distance between the first resonator and the second resonator. The capacitive components occur at the capacitance. The inductive components occur at the inductance.

Abstract: A refrigeration device of an embodiment includes: a heat-insulating vacuum chamber; a refrigerator cryogenic unit that is provided in the heat-insulating vacuum chamber and is cooled to a lower temperature than 195 K; a catalytic electrode that is provided in the heat-insulating vacuum chamber and contains a transition metal at least in part of a surface thereof; a power supply that applies a voltage to the catalytic electrode; and a heating unit that is provided in the heat-insulating vacuum chamber and heats the catalytic electrode. In this refrigeration device, the catalytic electrode is insulated from the heat-insulating vacuum chamber and the heating unit, and the heating unit is insulated from the heat-insulating vacuum chamber and the catalytic electrode.

Abstract: A superconducting antenna device of an embodiment includes an array antenna made by stacking a flat antenna having one or more antennas made of a superconducting material and a ground pattern on a low-loss dielectric substrate from a short wave band to an extremely-high frequency band, a vacuum chamber configured to accommodate the array antenna, a refrigerator configured to cool the array antenna, and a vacuum insulating window configured to pass an electromagnetic wave from a short wave band to an extremely-high frequency band in a direction of directivity of the array antenna in the vacuum chamber.

Abstract: According to an aspect of the present invention, there is provided a collector member 10 comprising a sheet-shaped base material 11 having a carbon-containing fiber 11a and catalyst particles 12 adhered to an outer periphery of the fiber 11a, containing a noble metal or an alloy thereof, and having an average particle diameter of 0.1 to 2 ?m.

Abstract: A magnetic resonance imaging apparatus of an embodiment includes a housing, a static magnetic field source having a superconducting coil or a permanent magnet inside the housing, and a superconducting array antenna inside the housing.

Abstract: A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series.

Abstract: A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor comprising at least one compound semiconductor of a chalcopyrite compound, a stannite compound, and a kesterite compound on the first electrode. The forming of the photoelectric conversion layer includes immersing the precursor in a liquid including at least one of Group IIa and Group IIb elements at 0° C. to 60° C., after forming of the photoelectric conversion layer precursor. The compound semiconductor on a side of the first electrode is at least either amorphous or larger in average crystal grain size than the compound semiconductor on an opposite side of the first electrode.

Abstract: A superconducting antenna device of an embodiment includes an array antenna made by stacking a flat antenna having one or more antennas made of a superconducting material and a ground pattern on a low-loss dielectric substrate from a short wave band to an extremely-high frequency band, a vacuum chamber configured to accommodate the array antenna, a refrigerator configured to cool the array antenna, and a vacuum insulating window configured to pass an electromagnetic wave from a short wave band to an extremely-high frequency band in a direction of directivity of the array antenna in the vacuum chamber.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: A superconducting filter device of an embodiment includes: a high-frequency filter includes a superconducting element, and a dielectric member; and a drive tool configured to adjust a distance between the superconducting element and the dielectric member. The dielectric member and the drive tool take both a connection state and a separation state.