Abstract: A catalyst-layer-supporting substrate comprising a substrate supporting a catalyst layer; wherein the catalyst layer comprises two or more porous catalyst metal particle layers that are superposed alternately with (i) two or more intersticed layers comprising at least one element selected from the group consisting of Mn, Fe, Co, Ni, Zn, Sn, Al, and Cu; or (ii) two or more fibrous carbon layers having interstices among fibers of the fibrous carbon. A method for forming a catalyst-layer-supporting structure that comprises porous catalyst metal particle by removing a pore-forming metal from a mixture layer containing a pore-forming metal and a catalyst metal.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: A solar cell of an embodiment has a first solar cell, a second solar cell, and an intermediate layer between the first and second solar cells. The first solar cell has a Si layer as a light absorbing layer. The second solar cell has as a light absorbing layer one of a group I-III-VI2 compound layer and a group I2-II-IV-VI4 compound layer. The intermediate layer has an n+-type Si sublayer and at least one selected from a p+-type Si sublayer, a metal compound sublayer, and a graphene sublayer. The metal compound sublayer is represented by MX where M denotes at least one type of element selected from Nb, Mo, Pd, Ta, W, and Pt and X denotes at least one type of element selected from S, Se, and Te.

Abstract: An aspect of one embodiment, there is provided a photoelectric conversion element, including a first electrode having optical transparency, a second electrode, and an optical absorption layer provided between the first electrode and the second electrode, the optical absorption layer having a compound semiconductor constituted with a chalcopyrite structure or a stannite structure, the compound semiconductor having a first element of a Group 11 element and a second element of a Group 16 element and comprising a p-type portion and an n-type portion provided between the p-type portion and the first electrode, the n-type portion and the p-type portion jointly having a homo junction, wherein the n-type portion comprises a dopant which has a formal charge Vb being not less than 1.60 and not more than 2.83.

Abstract: The processes include: a layer superposition step in which the step of sputtering or vapor-depositing a mixture layer including a first pore-forming metal and a catalyst metal on a substrate and the step of forming an interlayer of a second pore-forming metal or a fibrous-carbon interlayer are alternately conducted repeatedly two or more times to thereby form a multilayer structure containing mixture layers and interlayers; and a pore formation step in which after the layer superposition step, the multilayer structure is subjected to a pore formation treatment.

Abstract: A light concentrator of an embodiment includes: a first high refractive index layer, a first low refractive index layer, and a second high refractive index layer stacked in sequence, wherein a surface on the first low refractive index layer side of the first high refractive index layer has a periodic concavoconvex region.

Abstract: A photoelectric conversion element of an embodiment includes: a p-type light absorbing layer having a chalcopyrite structure; an n-type semiconductor layer on the p-type light absorbing layer; an oxide layer on the n-type semiconductor layer; and a transparent electrode on the oxide layer.

Abstract: A photoelectric conversion element of an embodiment includes: a back electrode; a heterojunction-type light absorbing layer on the back electrode, containing Cu, selected from Al, In and Ga, and selected from Se and S, and having a chalcopyrite structure; a transparent electrode on the light absorbing layer, wherein aback electrode side-part of the light absorbing layer is of p-type, and a transparent electrode-side part of the light absorbing layer is of n-type, the light absorbing layer has a part with an average crystal grain size of 1,000 nm to 3,000 nm in the vicinity of the back electrode, and the light absorbing layer has apart with an average crystal grain size of at most 500 nm in the vicinity of the transparent electrode or the light absorbing layer has an amorphous part in the vicinity of the transparent electrode.

Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a transparent electrode, an intermediate layer, and a window layer. The photoelectric conversion layer includes a homojunction of a p-type compound semiconductor layer and an n-type compound semiconductor layer. The p-type and n-type compound semiconductors include group I-III-VI2 compound or group I2-II-IV-VI4 compound. The intermediate layer is provided between the n-type compound semiconductor layer and the transparent electrode. The intermediate layer is 1 nm to 10 nm in thickness. The window layer is provided between the intermediate layer and the transparent electrode.

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing copper (Cu), at least one Group IIIb element selected from the group including aluminum (Al), indium (In) and gallium (Ga), and sulfur (S) or selenium (Se), and having a chalcopyrite structure; and a buffer layer formed from zinc (Zn) and oxygen (O) or sulfur (S), wherein the molar ratio represented by S/(S+O) of the buffer layer is equal to or greater than 0.7 and equal to or less than 1.0, and the crystal grain size is equal to or greater than 10 nm and equal to or less than 100 nm.

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.

Abstract: A photoelectric conversion element of an embodiment includes a p-type light absorbing layer containing Cu, at least one or more Group IIIb elements selected from the group including Al, In and Ga, and at least one or more elements selected from the group including O, S, Se and Te; and an n-type semiconductor layer formed on the p-type light absorbing layer and represented by any one of Zn1-yMyO1-xSx, Zn1-y-zMgzMyO (wherein M represents at least one element selected from the group including B, Al, In and Ga), and GaP with a controlled carrier concentration, while x, y and z in the formulas Zn1-yMyO1-xSx and Zn1-y-zMgzMyO satisfy the following relations: 0.55?x?1.0, 0.001?y?0.05, and 0.002?y+z?1.0.

Abstract: A refrigeration device of an embodiment includes: a heat-insulating vacuum chamber; a refrigerator cryogenic unit that is provided in the heat-insulating vacuum chamber and is cooled to a lower temperature than 195 K; a catalytic electrode that is provided in the heat-insulating vacuum chamber and contains a transition metal at least in part of a surface thereof; a power supply that applies a voltage to the catalytic electrode; and a heating unit that is provided in the heat-insulating vacuum chamber and heats the catalytic electrode. In this refrigeration device, the catalytic electrode is insulated from the heat-insulating vacuum chamber and the heating unit, and the heating unit is insulated from the heat-insulating vacuum chamber and the catalytic electrode.

Abstract: A catalyst layer-supporting substrate includes a substrate and a catalyst layer. The catalyst layer includes a catalyst material and pores. The catalyst layer is formed on the substrate. The catalyst material has a layer or wire shape. A half-value width of a main peak of the catalyst material, as determined from X-ray diffraction spectrum of the catalyst layer, is 1.5° or more. A porosity of the catalyst layer is 30% or more.

Abstract: According to an aspect of the present invention, there is provided a collector member 10 comprising a sheet-shaped base material 11 having a carbon-containing fiber 11a and catalyst particles 12 adhered to an outer periphery of the fiber 11a, containing a noble metal or an alloy thereof, and having an average particle diameter of 0.1 to 2 ?m.

Abstract: A metal-containing particle aggregate of an embodiment of the present invention includes a plurality of core-shell particles. Each of the core-shell particles includes: a core portion that contains at least one magnetic metal element selected from the first group consisting of Fe, Co, and Ni, and at least one metal element selected from the second group consisting of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare-earth elements, Ba, and Sr; and a shell layer that includes a carbon-containing material layer and an oxide layer that covers at least part of the core portion and includes at least one metal element that belongs to the second group and is contained in the core portion.

Abstract: This invention provides a thin superconducting oxide film, which can realize a high critical current, and a superconducting member having a high level of electric power resistance. The superconducting member comprises a sapphire R face substrate, a buffer layer formed of grain lumps of an oxide provided on the sapphire R face substrate, and a superconducting layer provided on the buffer layer. The nearest neighbor distance between oxygen atoms in the oxide and the grain diameter of grain lumps of the oxide have been specified. The superconducting member can be used as a member for superconducting filters.

Abstract: A supporting method for supporting a metal particle including at least two elements on a surface of a plurality of granular supports in a decompression device, the supporting method supporting the metal particle whose particle diameter being smaller than a grain size of the granular support comprises holding the plurality of granular supports in a container and rotating a stirring device and/or the container, a stirring period in which the relative position among the plurality of granular supports are changed and a non-stirring period in which the relative position among the plurality of granular supports are not changed being altered by the rotating, wherein the decompression device comprises, an evaporation source for evaporating elements to form an alloy particle, the container for holding the plurality of granular supports in the decompression device so that a relative position among granular supports is able to be changed, a rotating device for rotating the container and the stirring device disposed in t

Abstract: A catalyst layer-supporting substrate includes a substrate and a catalyst layer. The catalyst layer includes a catalyst material and pores. The catalyst layer is formed on the substrate. The catalyst material has a layer or wire shape. A half-value width of a main peak of the catalyst material, as determined from X-ray diffraction spectrum of the catalyst layer, is 1.5° or more. A porosity of the catalyst layer is 30% or more.

Abstract: The processes include: a layer superposition step in which the step of sputtering or vapor-depositing a mixture layer including a first pore-forming metal and a catalyst metal on a substrate and the step of forming an interlayer of a second pore-forming metal or a fibrous-carbon interlayer are alternately conducted repeatedly two or more times to thereby form a multilayer structure containing mixture layers and interlayers; and a pore formation step in which after the layer superposition step, the multilayer structure is subjected to a pore formation treatment.