Abstract: An inkjet print apparatus includes a print head discharging ink onto a substrate, the print head including a first heater; a reservoir storing the ink; a first pipe supplying the ink to the reservoir; a second pipe collecting surplus ink; a mixing unit located on the first pipe and mixing the ink; a pump located on the second pipe and pressurizing and supplying the surplus ink to the reservoir; a temperature sensor located between the mixing unit and the print head and sensing a temperature of the ink; and a controller controlling a temperature of at least one of the first heater and the second heater in response to information received from the temperature sensor. The print head includes a heat insulator blocking heat emitted from the first heater between the substrate and the first heater.

Abstract: A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a substrate in a plasma OFF state, forming a first sub-metal oxide film by oxidizing the first metal precursor film in a plasma ON state, and forming a second metal precursor film on the first sub-metal oxide film in the plasma OFF state, where the metal oxide film has an amorphous phase, a thickness of about 20 nanometer (nm) to about 130 nm, and a dielectric constant of about 10 to about 50.

Abstract: An inkjet printing device includes a stage part including a stage, an inkjet head part including at least one inkjet head that disposes an ink on the stage, the ink including dipoles and a solvent having the dipoles, a heat treatment device that removes the solvent, a first sensing part that measures a position of the ink disposed on the stage, a second sensing part that measures a position of the inkjet head, and a third sensing part that measures a position of each of the dipoles disposed on the stage. A dipole aligning method includes disposing an ink on a substrate, the ink including dipoles and a solvent having the dipoles, generating an electric field on the substrate and disposing the dipoles on the substrate by the electric field, removing the solvent, and measuring a position of each of the dipoles disposed on the substrate.

Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first plate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction. The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.

Abstract: An inkjet printing and an inkjet printing method are provided. The inkjet printing device includes a stage comprising a substrate mounting part configured to receive a target substrate mounted thereon, a print head unit located above the stage and configured to spray an ink including a plurality of particles, and a suction device located at a side of the substrate mounting part and configured to generate negative pressure thereon.

Abstract: An inkjet printing apparatus includes a surface acoustic wave module including an inner passage and a surface acoustic wave generator around the inner passage; and an outflow passage connected to the surface acoustic wave module to discharge ink, where the outflow passage includes a first outflow passage connected to the inner passage to discharge first ink particles and a second outflow passage connected to the inner passage to discharge second ink particles having an average diameter smaller than that of the first ink particles, and the surface acoustic wave generator is closer to the second outflow passage than the first outflow passage.

Abstract: An inkjet printing apparatus, a dipole alignment method, and a display device manufacturing method are provided. The inkjet printing apparatus includes a stage, a print head part disposed above the stage, and an electric field generating part that provides an electric field to a space between the stage and the print head part. The dipole alignment method includes providing an electric field at an area above a target substrate, spraying ink including a dipole onto the target substrate through the area, and landing the dipole on the target substrate. The display device manufacturing method includes preparing a base layer on which first and second electrodes are disposed, spraying ink including a light emitting element onto the base layer through the area, landing the light emitting element between the first and second electrodes.

Abstract: An inkjet print apparatus includes a print head discharging ink onto a substrate, the print head including a first heater; a reservoir storing the ink; a first pipe supplying the ink to the reservoir; a second pipe collecting surplus ink; a mixing unit located on the first pipe and mixing the ink; a pump located on the second pipe and pressurizing and supplying the surplus ink to the reservoir; a temperature sensor located between the mixing unit and the print head and sensing a temperature of the ink; and a controller controlling a temperature of at least one of the first heater and the second heater in response to information received from the temperature sensor. The print head includes a heat insulator blocking heat emitted from the first heater between the substrate and the first heater.

Abstract: Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.

Abstract: A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

Abstract: Provided is a vapor deposition apparatus including a first injection unit injecting a first raw gas in a first direction and a first filter unit mounted on the first injection unit. The first filter unit includes a plurality of plates separated from one another in the first direction and disposed in parallel to one another, each of the plurality of plates having holes therein, being detachably coupled with the first filter unit, and having the holes with sizes of horizontal cross-sections gradually increasing in a direction in which the first raw gas moves. Accordingly, a process efficiency of the vapor deposition apparatus may be enhanced.

Abstract: A thin film processing apparatus includes a susceptor and a showerhead facing the susceptor. The showerhead includes a first plate including an inner tunnel, a first injection hole, and a second injection hole. The inner tunnel extends across the first pate in a thickness direction of the first plate. The first injection hole penetrates a first surface and a second surface of the first plate on opposite sides of the first plate in the thickness direction, The second injection hole penetrates the second surface of the first plate. The second injection is connected with the inner tunnel.

Abstract: A plasma enhanced chemical vapor deposition (PECVD) apparatus including a chamber; an upper electrode in the chamber; a spray unit in the upper electrode to spray a gas introduced from outside the chamber toward a substrate inside the chamber; a susceptor on which the substrate is mountable; a plurality of mask supports in a mask frame at an edge of the susceptor, the mask supports being formed of a conductive material that provides elastic force by supporting a mask to maintain and control a level of the mask; and a power supply unit to supply power to the upper electrode.

Abstract: A deposition apparatus includes a chamber, a susceptor that supports a substrate in the chamber, an upper electrode facing the susceptor, a showerhead defining a gas inlet space between the upper electrode and the susceptor, a metal source storage to store a metal source supplied to the chamber, a vaporizer to vaporize the metal source, a first gas source to supply a first gas to move the metal source toward the vaporizer, a second gas source to supply a second gas to move the metal source in the vaporizer toward the chamber, a third gas source connected to the chamber to supply a third gas into a reaction space defined between the susceptor and the upper electrode such that the third gas reacts with the metal source, and a fourth gas source connected to the chamber to supply a fourth gas used to clean an inside of the chamber.

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract: A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

Abstract: A plasma processing device including a chamber, a plurality of dielectric windows covering a top portion of the chamber, a lid frame supporting the dielectric windows on a same plane, a plurality of supporting bars supporting a top portion of the lid frame, and a plurality of antennas positioned above the dielectric windows, in which the antennas include a first antenna positioned inside an area defined by the supporting bars and having a loop form, and a second antenna positioned outside the area defined by the supporting bars and having a loop form, and a first current direction in the first antenna and a second current direction in the second antenna are the same as each other.