Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.

Abstract: A tool includes a barrel, a guiding wire, and an electrically conductive member. The barrel is made of electrically conductive material. The guiding wire is disposed in the barrel. The barrel and the guiding wire are directly or indirectly connected to two opposite electrodes of a power source. The electrically conductive member is connected to an outer periphery of the guiding wire and is electrically connected to the guiding wire. The electrically conductive member is disposed between the barrel and the guiding wire and is spaced from the barrel. When the power source is activated, an electric arc is generated between the electrically conductive member and the barrel.

Abstract: A logic cell structure includes a first portion, a second portion and a third portion. The first portion, arranged to be a first layout of a first semiconductor element, is placed in a first cell row of a substrate area extending in a first direction. The second portion, arranged to be a second layout of a second semiconductor element, is placed in a second cell row of the substrate area. The third portion is arranged to be a third layout of an interconnecting path used for coupling the first semiconductor element and the second semiconductor element. The first, second and third portions are bounded by a bounding box with a height in a second direction and a width in the first direction. Respective centers of the first portion and the second portion are arranged in a third direction different from each of the first direction and the second direction.

Abstract: An integrated circuit includes a gated circuit configured to operate on at least a first or a second voltage, a header circuit coupled to the gated circuit, a first and second power rail on a back-side of a wafer, and a third power rail on a front-side of the wafer. The header circuit is configured to supply the first voltage to the gated circuit by the first power rail. The first power rail includes a first portion, a second portion and a third portion, the third portion being between the first portion and the second portion. The second power rail is configured to supply the second voltage to the gated circuit, and is between the first portion and the second portion. The third power rail includes a first set of conductors. Each of the first set of conductors being configured to supply a third voltage to the header circuit.

Abstract: A method executed at least partially by a processor includes determining a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the method further includes performing a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The determining the power parameter is performed before a routing operation in the IC layout diagram.

Abstract: A method of forming an integrated circuit includes forming at least a first or a second set of devices in a substrate, forming an interconnect structure over the first or second set of devices, and depositing a set of conductive structures on the interconnect structure. The first and second set of devices are configured to operate on a first supply voltage. Forming the interconnect structure includes depositing a set of insulating layers over the first or second set of devices, etching the set of insulating layers thereby forming a set of trenches, depositing a conductive material within the set of trenches, thereby forming a set of metal layers, and forming a portion of a header circuit between a first and a second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first layer including conductive lines (C_1st lines) which include interspersed alpha C_1st lines and beta C_1st lines designated correspondingly for first and second reference voltages; and forming a second layer over the first layer, the second layer including segments (C_2nd segments) which include interspersed alpha C_2nd segments and beta C_2nd segments designated correspondingly for the first and second reference voltages; and, relative to the first direction, each beta C_2nd segment being substantially asymmetrically between corresponding adjacent ones of the alpha C_2nd segments.

Abstract: The invention provides a battery module with cooling cartridge and battery system thereof. The cooling cartridge is utilized to be disposed between the battery units stacked in a single axis. The supporting portion of the cooling cartridge is directly contacted in a large area to the current collecting sheet of the battery unit. And the wing portions, extended from the two sides of the supporting portion, are directly contacted to the inner sidewalls of the metal housing. Therefore, a large-area heat dissipating path for the battery cell is provided, and the performance and stability of the battery cell are greatly improved.

Abstract: The present disclosure provides methods and a non-transitory computer readable media for resistance and capacitance (RC) extraction. The method comprises: receiving an electronic layout; selecting a two-dimensional (2D) conductive element from the electronic layout, wherein an aspect ratio of the 2D conductive element is lower than a predetermined threshold; partitioning the 2D conductive element into a plurality of polygons; determining a parasitic capacitance value for each polygon; determining multiple parasitic resistance values for each polygon; determining a total capacitance value of the 2D conductive element based on the parasitic capacitance value for each polygon; and determining a total resistance value of the 2D conductive element based on the multiple parasitic resistance values for each polygon.

Abstract: A system includes a substrate having a first side and a second side opposite the first side, a cell on the substrate having a first pin on either the first side or the second side, and a second pin on the second side, a first signal connected to the first pin, and a second signal connected to the second pin.

Abstract: Failure-in-time (FIT) evaluation methods for an IC are provided. Data representing a layout of the IC is accessed, and the layout includes a metal line and a plurality of vertical interconnect accesses (VIAs). The metal line is divided into a first sub-line with a first line width and a second sub-line with a second line width. A plurality of nodes are picked along the first and second sub-lines of the metal line. The metal line is divided into a plurality of metal segments based on the nodes. FIT value is determined for each of the metal segments to verify the layout and fabricate the IC. The first line width is greater than the second line width.

Abstract: The invention discloses an active material ball composite layer. The active material ball composite layer includes a plurality of active material balls and an outer binder. The active material ball include a plurality of active material particles and a first conductive material. An inner binder is used to adhere the active material particles and the first conductive material to form the active material balls. Then, the outer binder is used to adhere the active material balls to form the composite layer. The elasticity of the inner binder is smaller than the elasticity of the outer binder. Therefore, the scale of expansion of the active material particles is efficiently controlled during charging and discharging. The unrecoverable voids would be reduced or avoided.

Abstract: The present invention provides an auxiliary film comprising a body and a plurality of microstructures formed on a first surface of the body, the microstructures include a concave-convex appearance on the first surface, and the microstructures have two ends extending to the periphery of the first surface respectively. When the auxiliary film is attached to a pre-protected surface of a substrate, the microstructures and the surface of the substrate form several open air channels to increase the separation efficiency of the main body from the substrate and reduce the overall process time.

Abstract: The present application provides a package structure for a chemical system, which comprises an inner glue frame and a first outer glue frame. The inner glue frame forms an accommodating space for accommodating a chemical system. The first outer glue frame is further disposed outside the inner glue frame and used for isolating the ambient environment and thus avoiding the influence of the ambient environment on the chemical system. A second outer glue frame is further disposed for avoiding damages such as side bumps and falls of the chemical system or contact with foreign metals. Thereby, the performance of the chemical system can be maintained.

Abstract: A semiconductor device including a first oxide definition (OD) strip doped by a first-type dopant in a first doping region defining an active region of a first Metal-Oxide Semiconductor (MOS); a second OD strip doped by a second-type dopant in a second doping region and a third doping region, the second doping region defining an active region of a second MOS and the third doping region defining a body terminal of the first MOS, wherein the second OD is parallel to the first OD strip; and a first dummy OD strip, wherein a boundary between the second doping region and the third doping region is formed over the first dummy OD strip; wherein the first-type dopant is different from the second-type dopant.

Abstract: A film peeling method is disclosed to peel off a film covered on the surface of an object. The method includes the steps of: setting a fulcrum located at outer side of the object; setting a lift-off position on the film; and picking up the film from the lift-off position with the fulcrum as the axis, and applying a circular traction force with a variable radius on the film for peeling off the film from the object. The film peeling method can peel off the film covered on the surface of the object by different peeling stages, to reduce the peeling path and reduce the force required for peeling the film, thereby reducing the peeling time and improving the peeling efficiency.

Abstract: A system includes a processor configured to determine a power parameter associated with a cell in an integrated circuit (IC) layout diagram. In response to the determined power parameter exceeding a design criterion, the processor is configured to perform a modification of the IC layout diagram, the modification including at least one of altering a placement of the cell in the IC layout diagram or modifying a power delivery path to the cell. The power parameter includes at least one of a power density of a tile containing the cell, a voltage drop of the tile containing the cell, or a voltage drop of the cell.

Abstract: The invention provides a battery module with cooling cartridge and battery system thereof. The cooling cartridge is utilized to be disposed between the battery units stacked in a single axis. The supporting portion of the cooling cartridge is directly contacted in a large area to the current collecting sheet of the battery unit. And the wing portions, extended from the two sides of the supporting portion, are directly contacted to the inner sidewalls of the metal housing. Therefore, a large-area heat dissipating path for the battery cell is provided, and the performance and stability of the battery cell are greatly improved.

Abstract: An integrated circuit includes a gated circuit configured to operate on a first or second voltage, a header circuit, a first power rail and a second power rail on a back-side of a wafer, a third power rail on the back-side of the wafer, and a fourth power rail on a front-side of the wafer. The first and second power rail extend in a first direction, and are separated from each other in a second direction. The third power rail is between the first and second power rail in the second direction. The third power rail is configured to supply the second voltage to the gated circuit. The fourth power rail includes a first set of conductors extending in the second direction. Each of the first set of conductors is configured to supply a third voltage to the header circuit, and is separated from each other in the first direction.

Abstract: A system includes a substrate having a first side and a second side opposite the first side, a cell on the substrate having a first pin on either the first side or the second side, and a second pin on the second side, a first signal connected to the first pin, and a second signal connected to the second pin.