Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.

Abstract: One aspect of this description relates to an integrated circuit (IC) structure including a first layer and a second layer. The first layer includes a first metal structure coupled to a first power supply having a first voltage level and a second metal structure coupled to a second power supply having a second voltage level different from the first voltage level. The second layer is formed over the first layer. The second layer includes a first nano-sheet device coupled to the first metal structure and a second nano-sheet device adjacent to the first nano-sheet device. The second nano-sheet device is coupled to the second metal structure. A distance between the first nano-sheet device and the second nano-sheet device is less than a minimum n-well to n-well spacing.

Abstract: A method of manufacturing a semiconductor device includes forming a set of cells; forming a PG layer, including forming a first metallization layer including forming first conductor portions and second conductor portions, corresponding ones of the first conductor portions being arranged in first pairs; corresponding ones of the second conductor portions being arranged in second pairs; the cells being arranged to overlap at least one of the first and second conductor portions of the first metallization layer relative to the first direction; and forming a second metallization layer over the first metallization layer, the second metallization layer including forming third conductor portions and fourth conductor portions, the cells being arranged in a repeating relationship that each cell overlaps, an intersection of a corresponding one of the first or second pairs with at least a corresponding one of the third conductor portions or a corresponding one of the fourth conductor portions.

Abstract: The invention discloses an active material ball composite layer. The active material ball composite layer includes a plurality of active material balls and an outer binder. The active material ball include a plurality of active material particles and a first conductive material. An inner binder is used to adhere the active material particles and the first conductive material to form the active material balls. Then, the outer binder is used to adhere the active material balls to form the composite layer. The elasticity of the inner binder is smaller than the elasticity of the outer binder. Therefore, the scale of expansion of the active material particles is efficiently controlled during charging and discharging. The unrecoverable voids would be reduced or avoided.

Abstract: A semiconductor device, including: a first OD strip, a first doping region, a second OD strip, a second doping region, and a third doping region. The first OD strip extending in a first direction is disposed on the first OD strip, and includes a first-type dopant to define an active region of a first MOS. The second OD strip extending in the first direction and immediately adjacent to the first OD strip in a second direction, wherein the second direction is orthogonal with the first direction. The second doping region is disposed on the second OD strip, and includes a second-type dopant to define an active region of a second MOS. The third doping region is disposed on the second OD strip, and includes the second-type dopant and is configured to be a body terminal of the first MOS.

Abstract: A method for separating aromatic hydrocarbons by an extractive distillation, comprising introducing a hydrocarbon mixture containing aromatic hydrocarbons into the middle of an extractive distillation column (8); introducing an extraction solvent into the upper part of the extractive distillation column; after an extractive distillation, a raffinate containing benzene is discharged from the top of the column, wherein the benzene content is 3-40% by mass, and sent to the lower part of the extraction column (10); the extraction solvent is introduced to the upper part of the extraction column for a liquid-liquid extraction; a raffinate liquid free of aromatic hydrocarbons is discharged from the top of the extraction column; a rich solvent containing benzene is discharged from the bottom of the column and enters the upper-middle part of the extractive distillation column; the rich solvent obtained at the bottom of the extractive distillation column is sent to the solvent recovery column to separate the aromatic h

Abstract: Semiconductor devices are provided. A semiconductor device includes a semiconductor substrate, a power switch, a first power mesh and a second power mesh. The power switch is formed over the front surface of the semiconductor substrate. The first power mesh is formed over the power switch and is directly connected to the first terminal of the power switch. The second power mesh is formed over the back surface of the semiconductor substrate and is directly connected to the second terminal of the power switch.

Abstract: A suppression element includes a passivation composition supplier and a polar solution supplier. The passivation composition supplier is capable of releasing a metal ion (A), selected from a non-lithium alkali metal ion, an alkaline earth metal ion or a combination thereof, and an aluminum etching ion (B). The polar solution of the polar solution supplier carries the metal ion (A) and the aluminum etching ion (B) to an aluminum current collector to etched through thereof, and the metal ion (A) and the aluminum ion, generated during the etching, are seeped into the electrochemical reaction system. Then, the positive active material is transformed to a crystalline state with lower electric potential and lower energy, and the negative active material is transformed to an inorganic polymer state with higher electric potential and lower energy to prevent the thermal runaway from occurring.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure comprises a first semiconductor device, a second semiconductor device, and a first semiconductor component. The first semiconductor device and the second semiconductor device defining a channel region. The first semiconductor component is disposed in the channel region and configured to control states of a plurality of components in the channel region. The first semiconductor device and the first semiconductor component are located adjacent to a boundary, and the first semiconductor component is electrically isolated from the first semiconductor device.

Abstract: A method (of fabricating a power grid (PG) arrangement in a semiconductor) includes: forming a first layer including conductive lines (C_1st lines) which include interspersed alpha C_1st lines and beta C_1st lines designated correspondingly for first and second reference voltages; and forming a second layer over the first layer, the second layer including segments (C_2nd segments) which include interspersed alpha C_2nd segments and beta C_2nd segments designated correspondingly for the first and second reference voltages; and, relative to the first direction, each beta C_2nd segment being substantially asymmetrically between corresponding adjacent ones of the alpha C_2nd segments.

Abstract: A method of forming a semiconductor device including: providing a first circuit cell including a first pin cell; forming a connecting path originated from the first pin cell of the first circuit cell; performing an Electromigration (EM) checking process with a first parasitic capacitance of the first pin cell and a second parasitic capacitance of the connecting path by loading a loading capacitance file to determine whether the loading capacitance of the first pin cell is larger than a first predetermined capacitance; and substituting a second pin cell for the first pin cell when the loading capacitance of the first pin cell is larger than the first predetermined capacitance, wherein the second pin cell is different from the first pin cell.

Abstract: The present application provides a package structure for a chemical system, which comprises an inner glue frame and a first outer glue frame. The inner glue frame forms an accommodating space for accommodating a chemical system. The first outer glue frame is further disposed outside the inner glue frame and used for isolating the ambient environment and thus avoiding the influence of the ambient environment on the chemical system. A second outer glue frame is further disposed for avoiding damages such as side bumps and falls of the chemical system or contact with foreign metals. Thereby, the performance of the chemical system can be maintained.

Abstract: In non-limiting examples of the present disclosure, systems, methods and devices for executing gesture operations are provided. A touchpad gesture manager and a touchscreen gesture manager may be maintained. Both managers may comprise the identities of gesture operations and conditions for executing the gesture operations. The conditions for one or more touchscreen gesture operations may be the same as the conditions for one or more corresponding touchpad gesture operations. The gestures that have same conditions for the touchscreen and the touchpad may comprise application window operations and virtual desktop transition operations. In some examples, one or more display elements, animations, or intermediate operations may be different in executing the touchscreen operations than for executing the touchpad operations.

Abstract: An integrated circuit includes a first set of devices, a set of metal layers and a header circuit. The first set of devices are configured to operate on a first supply voltage, and are located on a first layer of the integrated circuit. The set of metal layers are above the first layer, and includes a first metal layer and a second metal layer. The first metal layer extends in at least a first direction and a second direction. The header circuit is above the first set of devices. At least a portion of the header circuit is positioned between the first metal layer and the second metal layer. The header circuit is configured to provide the first supply voltage to the first set of devices, and is configured to be coupled to a first voltage supply having the first supply voltage.

Abstract: The invention discloses a composite negative active material ball, which includes an electrically conductive metal core, which is substantially without pores, and a plurality of silicon or silicon compound particles, which is distributed on the surface of electrically conductive metal core. Partial volume of the silicon or silicon compound particles are embedded into the electrically conductive metal core. The silicon or silicon compound particles can maintain the well contact of the electrically conductive metal core during alloying/dealloying with lithium. Therefore, the composite negative active material ball have good electrical transfer characteristics.

Abstract: The invention provides a lithium secondary battery including an ionic provider added to the positive electrode. The ionic provider does not involve in the electrochemical reaction of the lithium secondary battery during charging and discharging. The ionic provider can absorb thermal energy caused by the rising temperature of the lithium secondary battery to release the reactive anionic group. The reactive anionic group will react with the positive active material to reduce the reversibility of the positive active material. Also, the positive active material will become to a lower energy state from a higher energy state with lithium-ion extraction to effectively suppress the thermal runaway of the lithium secondary battery.

Abstract: The invention provides a lithium secondary battery including an ionic provider added to the positive electrode and/or a lithium receiver added to the negative electrode. The ionic provider and/or the ionic provider does not involve in the electrochemical reaction of the lithium secondary battery during charging and discharging. The ionic provider can absorb thermal energy caused by the rising temperature of the lithium secondary battery to release the reactive cation. The reactive cation will insert the location with lithium-ion extraction of the positive electrode to make the lattice structure of the positive active material be stable. Therefore, the release of atomic oxygen is avoided. The lithium receiver receives the diffused lithium from the negative electrode to reduce the lithium concentration of the negative electrode. Therefore, it will present a stable state with lower energy to effectively suppress the thermal runaway.

Abstract: A suppression element includes a passivation composition supplier and a polar solution supplier. The passivation composition supplier is capable of releasing a metal ion (A), selected from a non-lithium alkali metal ion, an alkaline earth metal ion or a combination thereof, and an aluminum etching ion (B). The polar solution of the polar solution supplier carries the metal ion (A) and the aluminum etching ion (B) to an aluminum current collector to etched through thereof, and the metal ion (A) and the aluminum ion, generated during the etching, are seeped into the electrochemical reaction system. Then, the positive active material is transferred to a crystalline state with lower electric potential and lower energy, and the negative active material is transferred y to an inorganic polymer state with higher electric potential and lower energy to prevent the thermal runaway from occurring.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises determining a dimensional quantity of a layout pattern having an angle relative to grid lines of a minimum grid. The minimum grid may be defined by a first quantity associated with a first direction and a second quantity associated with a second direction perpendicular to the first direction. The determination of the dimensional quantity of the layout pattern is based on the first quantity, the second quantity and the angle of the layout pattern relative to the grid lines of the minimum grid.

Abstract: A semiconductor structure includes a power grid layer (including a first metallization layer) and a set of cells. The first metallization layer includes: conductive first and second portions which provide correspondingly a power-supply voltage and a reference voltage, and which have corresponding long axes oriented substantially parallel to a first direction; and conductive third and fourth portions which provide correspondingly the power-supply voltage and the reference voltage, and which have corresponding long axes oriented substantially parallel to a second direction substantially perpendicular to the first direction. The set of cells is located below the PG layer. Each cell is monostate cell which lacks an input signal and has a single output state. The cells are arranged to overlap at least one of the first and second portions in a repeating relationship with respect to at least one of the first or second portions of the first metallization layer.