Abstract: Provided is a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus includes: a processing chamber; a substrate support provided in the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas introduction port; and a cylindrical member configured to support the plate and surround a periphery of the substrate. The plate and the cylindrical member constitute a component of a SiC member having a SiC film deposited by CVD, and the cylindrical member includes a first portion that is deformable under a load.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first, elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: An information processing device includes a displaced position calculation processing unit, a spatial value acquisition processing unit, and a spatial value display processing unit. The displaced position calculation processing unit is configured to determine displaced position data on a position displaced from an optional point on surface shape data on a surface of a measurement target in a given direction by a given distance. The spatial value acquisition processing unit is configured to acquire, based on spatial region values represented by volume data formed in a space containing a shape of the measurement target and the displaced position data, a spatial region value for a position stored in the displaced position data. The spatial value display processing unit is configured to dispose and display a display material corresponding to the spatial region value on the surface shape data.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.

Abstract: An information processing device includes a displaced position calculation processing unit, a spatial value acquisition processing unit, and a spatial value display processing unit. The displaced position calculation processing unit is configured to determine displaced position data on a position displaced from an optional point on surface shape data on a surface of a measurement target in a given direction by a given distance. The spatial value acquisition processing unit is configured to acquire, based on spatial region values represented by volume data formed in a space containing a shape of the measurement target and the displaced position data, a spatial region value for a position stored in the displaced position data. The spatial value display processing unit is configured to dispose and display a display material corresponding to the spatial region value on the surface shape data.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

Abstract: A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.

Abstract: A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.

Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.

Abstract: A plasma processing apparatus includes a processing chamber in which plasma is generated, and a protection target member which is provided in the processing chamber and needs to be protected from consumption by the plasma. The protection target member is made of a material having a property of integrating radicals and/or anions or a protective layer containing the material is provided on a surface of the protection target member.

Abstract: A part for a semiconductor manufacturing apparatus, the part being enabled to cause electricity to pass through and including an insulating member.