Abstract: The present application discloses a method and an apparatus for transmitting information. A specific implementation of the method includes: sending first information to be transmitted to a shared memory; traversing memory groups in the shared memory, and acquiring a first memory unit suitable for the amount of the first information, each of the memory groups including at least one memory unit, each of memory units in the memory group having an identical size, and the memory units in different memory groups having different sizes; and storing the first information into the acquired first memory unit, so that the first information is read from the first memory unit by a receiving node. Through this implementation, the first information that needs to be transmitted is stored into the memory unit suitable for the amount of the first information, thereby saving memory resources.

Abstract: This disclosure discloses a method and apparatus for transmitting data in a robot operating system. The robot operating system includes a transmitting node, a receiving node, and a shared memory as a transmission medium between the transmitting and receiving nodes. The method in a particular embodiment includes: traversing, by the transmitting node, a sequence of data templates stored in advance in the shared memory, and determining whether the respective data templates in the sequence of data templates are currently being written into or read from; identifying a data template in the sequence of data templates currently being neither written into nor read from as a target data template, and obtaining information of the target data template; and writing data into the target data template according to the information of the target data template. This embodiment can improve the performance of transmitting the data while occupying less memory resources.

Abstract: The present application discloses a method and an apparatus for transmitting a message. The method of an embodiment comprises: dividing a shared memory area allocated by an operating system into a plurality of memory blocks for storing messages having different priorities; dividing each memory block in the plurality of memory blocks into at least one memory unit having a successive serial number; determining, from the plurality of memory blocks according to a priority of a to-be-transmitted message, a target memory block for storing the to-be-transmitted message; and writing the to-be-transmitted message into a memory unit of the target memory block. This embodiment implements message transmission based on priorities of the messages, and improves the control security of an intelligent control system.

Abstract: The present disclosure provides an information transmitting method and apparatus for use in a robot operating system. A specific implementation mode of the method comprises: acquiring to-be-transmitted information; determining a network relationship between a current node and an information receiving node receiving the to-be-transmitted information, the network relationship comprising a remote relationship and a local relationship; determining a transmission approach of the to-be-transmitted information according to a message transmission parameter, a configuration parameter and the network relationship; transmitting the to-be-transmitted information in the transmission approach. The implementation mode improves the information transmission efficiency of the robot operating system.

Abstract: The present application discloses a method and a system for transmitting data. A method embodiment comprises: acquiring a most recent shared memory block index of a shared memory segment by a data receiver, the shared memory segment being used by a data transmitter and the data receiver to transmit data; deciding whether the most recent shared memory block index is consistent with a shared memory block index corresponding to data recently read by the data receiver; and determining, according to the decision, whether to read the data in the shared memory block corresponding to the most recent shared memory block index.

Abstract: The present application discloses a data transmission method and system. A specific embodiment of the method includes: receiving a data transmission-instruction by a data sender, wherein the data transmission-instruction includes a thematic name indicative of a type of to-be-transmitted data required by a data receiver; creating a shared memory segment corresponding to the thematic name. It makes possible for the data sender and the data receiver to run in a separate memory space. When data is needed to be transmitted, a corresponding shared memory segment may be created for data transmission in accordance with any transmitting requirement, and the shared memory segment may be released when the transmission is done or appears abnormal.

Abstract: The present application discloses a message transmitting method and device for a robot operating system. A specific embodiment of the method comprises: searching by looping through a memory segment in a shared memory, by a transmitting node, a memory block having a memory block indicator comprising a writing mark of “writeable” and a reading mark of “0”; amending, by the transmitting node, the writing mark of the memory block indicator of the memory block searched out to indicate that the memory block is being written, and then writing data into the memory block searched out; and resetting, by the transmitting node, the writing mark of the memory block indicator of the memory block searched out to indicate that the memory block is writable after the data is written, releasing the memory block searched out and notifying a receiving node that the memory block searched out is readable.

Abstract: Disclosed in the present application are a method and device for managing a shared memory in a robot operating system.

Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.

Abstract: A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

Abstract: The present application discloses a method and apparatus for capturing an operation, and security control in a container-based virtualization system. A specific implementation of the method for capturing the operation includes: detecting, in a user mode, a process launch operation in a container of the container-based virtualization system; and performing, in a kernel mode, a step of capturing a signal processing operation, if the process launch operation is detected, the step of capturing the signal processing operation comprising: determining a presence of an unprocessed signal in the process; causing an executable instruction indicated by the unprocessed signal to jump to an entry address of a self-defined first function, and passing a signal number of the unprocessed signal to the first function, if the unprocessed signal exists; and capturing a signal processing operation corresponding to the passed signal number, if the first function is called.

Abstract: A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n+-type substrate being situated in such a manner, that an alternating sequence of n-type regions having a first width and p-type regions having a second width is present; a first metallic layer, which is provided on the front side of the semiconductor chip, forms an ohmic contact with the heavily doped p-type regions and is used as an anode electrode; a second metallic layer, which is provided on the back side of the semiconductor chip, constitutes an ohmic contact and is used as a cathode electrode; a dielectric layer provided, in each instance, between an n-type region and an adjacent p-type region, as well as p-type layers provided between the n-type regions and the first metallic layer.

Abstract: An SiC trench transistor having a first terminal and an epitaxial layer positioned vertically between a gate trench and a second terminal; a compensation layer extending horizontally being provided in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer. A method for manufacturing an SiC trench transistor is also provided, an epitaxial layer being provided on a second terminal of the SiC trench transistor; a compensation layer extending horizontally being implanted in the epitaxial layer, the compensation layer having an effective doping of a type opposite to the doping of the epitaxial layer; and a first terminal and a gate trench being provided above the compensation layer.

Abstract: A fatty acid composition containing linoleic acid, linolenic acid and oleic acid is provided. Also provided is a fatty acid composition containing linoleic acid, linolenic acid and oleic acid, and at least one selected from palmitinic acid, palmitoleic acid, stearic acid, arachidic acid and docosanoic acid. A plant extract and a pharmaceutical preparation are provided, wherein the pharmaceutical preparation contains an active component including at least one of the fatty acid composition, the plant extract and modified products thereof. Also provided is an application of the fatty acid composition, the plant extract and the pharmaceutical preparation in multiple fields. The pharmaceutical preparation may function to repair various wounds and traumas in skin, mucosa, lumina and muscular tissues.

Abstract: A semiconductor device having a trench MOS barrier Schottky diode includes a semiconductor volume of a first conductivity type, the semiconductor volume (i) having a first side which is covered with a metal layer, and (ii) including at least one trench which extends in the first side and is at least partially filled with metal and/or with a semiconductor material of a second conductivity type. The trench has at least one wall section which includes an oxide layer, at least in areas. At least one area, situated next to the trench, of the first side covered with the metal layer has a layer, situated between the metal layer and the semiconductor volume, made of a first semiconductor material of the second conductivity type.

Abstract: A semiconductor apparatus having a trench Schottky barrier Schottky diode, which includes: a semiconductor volume of a first conductivity type, which semiconductor volume has a first side covered with a metal layer, and at least one trench extending in the first side and at least partly filled with metal. At least one wall segment of the trench, and/or at least one region, located next to the trench, of the first side covered with the metal layer, is separated by a layer, located between the metal layer and the semiconductor volume, made of a first semiconductor material of a second conductivity type.

Abstract: A fatty acid composition containing linoleic acid, linolenic acid, and oleic acid is provided. Also provided is a fatty acid composition containing linoleic acid, linolenic acid, and oleic acid, and at least one selected from palmitinic acid, palmitoleic acid, stearic acid, arachidic acid, and docosanoic acid. A plant extract and a pharmaceutical preparation are provided, wherein the pharmaceutical preparation contains an active component including at least one of the fatty acid compositions, the plant extract and modified products thereof. Also provided is an application of the fatty acid composition, the plant extract and the pharmaceutical preparation in multiple fields. The pharmaceutical preparation may function to repair various wounds and traumas in skin, mucosa, lumina and muscular tissues.

Abstract: A substrate for a metal oxide semiconductor field effect transistor, and a metal oxide semiconductor field effect transistor, are made available. The substrate encompasses: an n-doped epitaxial drift zone, a p?-doped epitaxial first layer disposed on the drift zone, a heavily n-doped second layer disposed on the first layer, and a terminal formed by p+ implantation, the first layer being in electrical contact with the terminal and being disposed laterally between the terminal and a trench, the trench being formed in the drift zone, in the first layer, and in the second layer. The substrate is characterized in that an implantation depth (P) of the p+ implantation is at least as great as a depth of the trench. The deep p+ implantation can separate adjacent trenches in such a way that a field can no longer attack a gate oxide because it is directed around the gate oxide.

Abstract: A semiconductor configuration, which includes an epitaxial layer of the first conductivity type disposed on a highly doped substrate of first conductivity type; a layer of a second conductivity type introduced into the epitaxial layer; and a highly doped layer of the second conductivity type provided at the surface of the layer of the second conductivity type. Between the layer of the second conductivity type and the highly doped substrate of the first conductivity type, a plurality of Schottky contacts, which are in the floating state, are provided mutually in parallel in the area of the epitaxial layer.

Abstract: A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation.