Abstract: Systems and methods are provided for preventing unauthorized modification of an operating system. The system includes an operating system comprised of kernel code for controlling access to operation of a processing unit. The system further includes an enforcement agent executing at a higher privilege than the kernel code such that any changes to the kernel code are approved by the enforcement agent prior to execution.

Abstract: A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled with p-type semiconductor is situated, the trenches each having a heavily doped p-type region on their upper side, the n+-type substrate being situated in such a manner, that an alternating sequence of n-type regions having a first width and p-type regions having a second width is present; a first metallic layer, which is provided on the front side of the semiconductor chip, forms an ohmic contact with the heavily doped p-type regions and is used as an anode electrode; a second metallic layer, which is provided on the back side of the semiconductor chip, constitutes an ohmic contact and is used as a cathode electrode; a dielectric layer provided, in each instance, between an n-type region and an adjacent p-type region, as well as p-type layers provided between the n-type regions and the first metallic layer.

Abstract: A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.

Abstract: A Schottky diode includes an n+-substrate, an n-epilayer, trenches introduced into the n-epilayer, floating Schottky contacts being located on their side walls and on the entire trench bottom, mesa regions between the adjacent trenches, a metal layer on its back face, this metal layer being used as a cathode electrode, and an anode electrode on the front face of the Schottky diode having two metal layers, the first metal layer of which forms a Schottky contact and the second metal layer of which is situated below the first metal layer and also forms a Schottky contact. Preferably, these two Schottky contacts have different barrier heights.

Abstract: A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same.

Abstract: A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers.

Abstract: A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode.

Abstract: A semiconductor system of a Schottky diode is described having an integrated PN diode as a clamping element, which is suitable in particular as a Zener diode having a breakdown voltage of approximately 20 V for use in motor vehicle generator systems. The semiconductor system of the Schottky diode includes a combination of a Schottky diode and a PN diode. The breakdown voltage of the PN diode is much lower than the breakdown voltage of the Schottky diode, the semiconductor system being able to be operated using high currents during breakdown operation.

Abstract: A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown.

Abstract: An apparatus and method for establishing a trusted path between a user interface and a trusted executable, wherein the trusted path includes a hypervisor and a driver shim. The method includes measuring an identity of the hypervisor; comparing the measurement of the identity of the hypervisor with a policy for the hypervisor; measuring an identity of the driver shim; comparing the measurement of the identity of the driver shim with a policy for the driver shim; measuring an identity of the user interface; comparing the measurement of the identity of the user interface with a policy for the user interface; and providing a human-perceptible indication of whether the identity of the hypervisor, the identity of the driver shim, and the identity of the user interface correspond with the policy for the hypervisor, the policy for the driver shim, and the policy for the user interface, respectively.

Abstract: A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode being suited, e.g., as a Zener diode having a breakdown voltage of approximately 20 V, for use in motor-vehicle generator systems. In this context, the TJBS-Sub-PN is made up of a combination of a Schottky diode, an epitaxial p-n diode and a substrate p-n diode, and the breakdown voltage of the substrate p-n diode (BV_pn) is less than the breakdown voltage of the Schottky diode (BV_schottky) and the breakdown voltage of the epitaxial p-n diode (BV_epi).

Abstract: A semiconductor component includes at least one MOS field-effect transistor and a trench junction barrier Schottky diode (TJBS) configured as a monolithically integrated structure. The breakdown voltages of the MOS field-effect transistor and of the trench junction barrier Schottky diode (TJBS) are selected such that the MOS field-effect transistor can be operated in breakdown mode.

Abstract: A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n+-type substrate which acts as the cathode zone. An electrically floating, p-type layer, which acts as the anode zone of the p-n type diode, is located in the n-type epitaxial layer, at least in a location below the trench bottom. An oxide layer is located between a metal layer and the surface of the trenches. The n-type epitaxial layer may include two n-type layers of different doping concentrations.

Abstract: A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Abstract: A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same.

Abstract: A semiconductor device includes a trench MOS barrier Schottky diode having an integrated PN diode and a method is for manufacturing same.

Abstract: In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes.

Abstract: A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers.

Abstract: A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.

Abstract: Systems and methods are provided for preventing unauthorized modification of an operating system. The system includes an operating system comprised of kernel code for controlling access to operation of a processing unit. The system further includes an enforcement agent executing at a higher privilege than the kernel code such that any changes to the kernel code are approved by the enforcement agent prior to execution.