Abstract: A semiconductor device according to an embodiment of the present invention includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate through a gate insulating film; a source/drain region formed apart from the gate electrode; and a source/drain extension region formed between the gate electrode and the source/drain region so as to be shallower than the source/drain region; in which a buried film made of a crystal having a lattice constant different from that of an Si crystal is buried in at least a part of the source/drain region and the source/drain extension region.

Abstract: A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate electrode, a source/drain layer, and a germanide layer. The gate insulating film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating film. The source/drain layer is formed on both sides of the gate electrode, contains silicon germanium, and has a germanium layer in a surface layer portion. The germanide layer is formed on the germanium layer of the source/drain layer.

Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film provided therebetween. The semiconductor apparatus further comprises a gate sidewall insulating film having a three-layered structure formed of a first nitride film, an oxide film, and a second nitride film, which are formed on a sidewall of an upper portion of the gate electrode, and a gate sidewall insulating film having a two-layered structure formed of the oxide film and the second nitride film, which are formed on a sidewall of a lower portion of the gate electrode. The semiconductor apparatus further comprises a raised source/drain region formed of an impurity region formed in a surface layer of the semiconductor substrate and an impurity region grown on the impurity region.

Abstract: A semiconductor device, which can use silicon-germanium for a source/drain extension of pMOS, form a silicide layer on the source/drain, and realize a high-speed operation, is provided by comprising a gate electrode formed in a first conductive type region of a semiconductor substrate via an insulator, a first sidewall formed on a side face of the gate electrode, a second sidewall formed on a side face of the first sidewall, a semiconductor layer formed below the second sidewall, including a first impurity layer of a second conductive type and containing germanium, a second impurity layer formed in a region outside the second sidewall and containing impurities of the second conductive type with a higher concentration than those in the first impurity layer, and a silicide layer formed on the second impurity layer.

Abstract: A method of manufacturing a semiconductor device is disclosed which comprises forming a gate structure on a major surface of a semiconductor substrate with a gate insulating film interposed therebetween, forming a first insulating film to cover top and side surfaces of the gate structure and the major surface of the semiconductor substrate, reforming portions of the first insulating film which cover the top surface of the gate structure and the major surface of the semiconductor substrate by an anisotropic plasma process using a gas not containing fluorine, and removing the reformed portions of the first insulating film.

Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film provided therebetween. The semiconductor apparatus further comprises a gate sidewall insulating film having a three-layered structure formed of a first nitride film, an oxide film, and a second nitride film, which are formed on a sidewall of an upper portion of the gate electrode, and a gate sidewall insulating film having a two-layered structure formed of the oxide film and the second nitride film, which are formed on a sidewall of a lower portion of the gate electrode. The semiconductor apparatus further comprises a raised source/drain region formed of an impurity region formed in a surface layer of the semiconductor substrate and an impurity region grown on the impurity region.