Abstract: Carbon steel materials having a carbon content of at least 0.15 mass % are caused to abut against each other in a welding part. The rear face side of the welding part is covered by a stainless-steel backing member, and then a tubular probe of a rotary tool is inserted into the front face side of the welding part to weld the metallic materials together. To perform the welding, the maximum attained temperature of the welding part is controlled so as not to exceed 723° C. or 737° C., or the cooling rate of the welding part is controlled to 75° C./s or lower. In this manner, the formation of a martensite phase in the metallic structure of the welding part can be prevented and hard-carbon steel can be welded together at a high intensity.

Abstract: A clock generator circuit provides an output clock without an abnormal waveform pulse which causes faulty operation in other function circuits. A phase synchronizing circuit outputs a second clock synchronized with a first clock. A selector signal generator circuit outputs a switching signal when detecting the abnormal waveform pulse in the second clock. A selector outputs the first clock instead of the second clock as the output clock based on the switching signal. A delay circuit delays the second clock input to the selector so that the selector switches the output clock from the second clock to the first clock before the abnormal waveform pulse is input to the selector.

Abstract: A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench 11 is formed in an alignment region of an N+-type substrate 1. This trench 11 is used to leave voids 3 after the formation of an N?-type layer 2. Then, the voids 3 formed in the N+-type substrate 1 can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Abstract: An element wire, an electric wire including the element wire or the element wires, and a process for producing an element wire are provided, by which ductility of a core wire consisting of the element wires can be improved. The element wire is made of metal, at least one element wire being coated with an electrically insulating coating so as to constitute an electric wire. The crystal grains constituting the entire element wire are fine isometric grains. In the process for producing the element wire, an electrically conductive material is subjected to drawing so as to reduce a diameter of the material and subsequently subjected to successive bending along a longitudinal direction of the material.

Abstract: A semiconductor wafer includes a semiconductor substrate, a semiconductor layer, and an oxide layer. The semiconductor layer is disposed on a surface of the semiconductor substrate and has a crystal structure similar to a crystal structure of the semiconductor substrate. The semiconductor layer includes an element section and a scribe section. The scribe section is disposed to divide the element section into a plurality of portions and is configurated to be used as a cutting allowance for dicing. Each of the portions includes a column structure in which columns having different conductivity types are arranged alternately. The oxide layer is disposed on a surface of the scribe section to be exposed to an outside of the semiconductor device.

Abstract: A high strength and high ductility low carbon steel having a tensile strength of 800 MPa or more, an uniform elongation of 5% or more, and an elongation to failure of 20% or more which is produced by a method comprising subjecting an ordinary low carbon steel or an ordinary low carbon steel added with boron in an amount being 0.01% or less and effective for accelerating martensitic transformation to processing and heat treatment to prepare a product having coarser size of austenite crystal grains and then to water-quenching, to provide a steel product having a martensite phase in an amount of 90% or more, and subjecting the steel product to a low strain processing, specifically a cold rolling at a total rolling reduction in thickness of 20% or more and less than 80%, and to a low temperature annealing at 500° C. to 600° C., and a method for producing said high strength and high ductility low carbon steel.

Abstract: A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the width of the trench. After that, the inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished to complete the substrate.

Abstract: In a method for manufacturing a semiconductor device of the present invention, a portion of a first epitaxial layer formed in a trench in a silicon substrate is removed by vapor phase etching using a halogenated compound or hydrogen. In this removing process, the portion of the first epitaxial layer is removed at a predetermined temperature higher than that during epitaxial growth of the first epitaxial layer and at a predetermined pressure higher than that during epitaxial growth of the first epitaxial layer. Therefore, stress that would otherwise be concentrated at a bottom portion of the trench is relaxed because rearrangement of the silicon atoms increases.

Abstract: There is provided a new type of non-expanded graphite powder by peeling off a lamination plane within non-expanded graphite particles, which is useful as a conductive carbon material in a positive electrode mix for an alkaline manganese battery. The alkaline manganese battery has an excellent discharge property when the above non-expanded graphite powder are used as the conductive carbon material.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor layer. The semiconductor substrate has a main surface that is an Si{100} surface. The substrate has a trench in the main surface. The semiconductor layer is located on surfaces defining the trench to have common crystallographic planes with the semiconductor substrate. The trench is defined by a bottom surface, two long sidewall surfaces that face each other, and two short sidewall surfaces that face each other. The bottom surface and the long sidewall surfaces are Si{100} surfaces.

Abstract: In a method for manufacturing a semiconductor device of the present invention, a portion of a first epitaxial layer formed in a trench in a silicon substrate is removed by vapor phase etching using a halogenated compound or hydrogen. In this removing process, the portion of the first epitaxial layer is removed at a predetermined temperature higher than that during epitaxial growth of the first epitaxial layer and at a predetermined pressure higher than that during epitaxial growth of the first epitaxial layer. Therefore, stress that would otherwise be concentrated at a bottom portion of the trench is relaxed because rearrangement of the silicon atoms increases.

Abstract: A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the width of the trench. After that, the inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished to complete the substrate.

Abstract: A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.

Abstract: A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that an opening width thereof is wider than that of the trench. After that, an inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished, whereby a semiconductor substrate for forming a semiconductor device is obtained.