Abstract: A consumable member includes a core portion formed of the material having a first purity; and a protection portion provided at a portion worn out by plasma in the plasma processing apparatus around the core portion, and formed of the material having a second purity higher than the first purity. The material may be either quartz or ceramic.

Abstract: A carbon material for a non-aqueous secondary battery containing a graphite capable of occluding and releasing lithium ions, and having a cumulative pore volume at pore diameters in a range of 0.01 ?m to 1 ?m of 0.08 mL/g or more, a roundness, as determined by flow-type particle image analysis, of 0.88 or greater, and a pore diameter to particle diameter ratio (PD/d50 (%)) of 1.8 or less, the ratio being given by equation (1A): PD/d50 (%)=mode pore diameter (PD) in a pore diameter range of 0.01 ?m to 1 ?m in a pore distribution determined by mercury intrusion/volume-based average particle diameter (d50)×100 is provided.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support provided inside the plasma processing chamber and configured to hold a substrate, and a shower head facing the substrate support, wherein the shower head includes a shower plate formed with a gas flow path for discharging a gas, the shower plate includes a base member having a recessed portion, and an embedded member inserted into the recessed portion and bonded to the recessed portion, and the gas flow path includes a first flow path formed in the base member and communicating with the recessed portion, a second flow path formed in the embedded member, and a communication path formed in at least one of the base member and the embedded member and communicating the first flow path and the second flow path.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: There is a plasma processing system comprising: a processing chamber; a substrate support disposed in the processing chamber; an annular member disposed at an outer edge of the substrate support and having a bottom surface in contact with the substrate support, an upper surface on the opposite side of the bottom surface, and a side surface that connects the upper surface and the bottom surface; and a transfer arm configured to load/unload the annular member into/from the processing chamber while holding the upper surface or the side surface.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: An etching processing apparatus includes a stage configured to receive a substrate, a chamber configured to contain the stage, and a plasma generator configured to generate plasma in the chamber. An annular quartz member is disposed in a space in which the plasma is generated. The annular quartz member includes a surface facing the space. A coating film covers the surface of the quartz member. The coating film is made of a material other than quartz, and has a thickness of 10 nm or more and less than 800 nm.

Abstract: An anodized titanium material includes a titanium base material and an anodized titanium layer. The anodized titanium layer is provided on a surface of the titanium base material. The anodized titanium layer includes a porous first anodized titanium layer. The anodized titanium layer has a withstand voltage at 25° C. of 500 V or more, a Vickers hardness of 200 or more, a film thickness of 20 ?m or more and less than 80 ?m, an arithmetic average roughness Ra of a surface of less than 1.6 ?m, and a maximum height roughness Rz of the surface is less than 6.3 ?m. In both of a section perpendicular to a thickness direction of the first anodized titanium oxide layer and the surface, no pore sections having a shape capable of including a circle having a diameter of 0.5 ?m or more are observed.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: Provided is a thermal spray material that can form a compact thermal sprayed coating having an enhanced plasma erosion resistance. The herein disclosed art provides a thermal spray material that contains a rare earth element (RE), oxygen (O), and a halogen element (X) as constituent elements and that contains a mixed crystal of a rare earth element oxyhalide (RE-O—X) and a rare earth element halide (REX3).

Abstract: A particle collecting apparatus includes a cylindrical housing, a gap forming unit, a supply port and an intake port. The cylindrical housing has a closed top and an open bottom facing a target object. The gap forming unit is configured to form a gap having a predetermined distance between the bottom and the target object. The supply port is formed at the opening of the bottom in an annular shape along an inner wall of the housing and configured to supply a gas to the target object. The intake port is provided closer to a central axis of the supply port than the supply port and configured to suck particles on the target object.

Abstract: A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.

Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.

Abstract: Provided is a thermal spray material that can form a compact thermal sprayed coating having an enhanced plasma erosion resistance. The herein disclosed art provides a thermal spray material that contains a rare earth element (RE), oxygen (O), and a halogen element (X) as constituent elements and that contains a mixed crystal of a rare earth element oxyhalide (RE-O—X) and a rare earth element halide (REX3).

Abstract: Provided is a thermal spray material that can form a compact thermal sprayed coating having an enhanced plasma erosion resistance. The herein disclosed art provides a thermal spray material that contains a rare earth element (RE), oxygen (O), and a halogen element (X) as constituent elements and that contains a mixed crystal of a rare earth element oxyhalide (RE-O—X) and a rare earth element halide (REX3).

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O—X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The rare earth element oxyhalide has a halogen to rare earth element molar ratio (X/RE) of 1.1 or greater.

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating with greater plasma erosion resistance. The thermal spray material comprises at least 77% by mass rare earth element oxyhalide (RE—O—X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The thermal spray material is characterized by being essentially free of an oxide of the rare earth element.

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O—X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The thermal spray material has an X-ray diffraction pattern that shows a main peak intensity IA corresponding to the rare earth element oxyhalide, a main peak intensity IB corresponding to a rare earth element oxide and a main peak intensity IC corresponding to a rare earth element halide, satisfying a relationship [(IB+IC)/IA]<0.02.

Abstract: A plasma processing apparatus includes a lower electrode 12 on which a wafer W is mounted. A second coolant path 70b is formed in a spiral shape in a region within the lower electrode 12 corresponding to a region where the wafer W is placed. Further, a first coolant path 70a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to a region where the second coolant path 70b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72a connected to the first coolant path 70a and a second pipeline 72b connected to the second coolant path 70b. A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72a, and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.