Patents by Inventor Nobuyuki Nagayama
Nobuyuki Nagayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8877002Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.Type: GrantFiled: May 24, 2013Date of Patent: November 4, 2014Assignee: Tokyo Electron LimitedInventors: Kouji Mitsuhashi, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
-
Patent number: 8739732Abstract: A plasma treatment container internal member, which is used in a plasma treatment container for performing a process on an object to be treated by plasma, includes an anodic oxide coating formed on a surface of a base material of the plasma treatment container internal member by an anodic oxidation treatment using plasma discharge, and a thermally sprayed film formed on the anodic oxide coating. The anodic oxidation treatment includes immersing the base material in an alkaline organic solvent, and performing the plasma discharge in the alkaline organic solvent.Type: GrantFiled: May 17, 2002Date of Patent: June 3, 2014Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Hiroyuki Nakayama, Kouji Mitsuhashi
-
Patent number: 8715782Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.Type: GrantFiled: October 19, 2012Date of Patent: May 6, 2014Assignee: Tokyo Electron LimitedInventors: Naoyuki Satoh, Nobuyuki Nagayama, Keiichi Nagakubo
-
Publication number: 20140008020Abstract: A plasma processing apparatus includes a lower electrode 12 on which a wafer W is provided. A second coolant path 70b is formed in a spiral shape in a region within the lower electrode 12 corresponding to where the wafer W is placed. Further, a first coolant path 70a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to where the second coolant path 70b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72a connected to the first coolant path 70a and a second pipeline 72b connected to the second coolant path 70b. A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72a, and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.Type: ApplicationFiled: July 1, 2013Publication date: January 9, 2014Inventor: Nobuyuki Nagayama
-
Publication number: 20130284375Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.Type: ApplicationFiled: June 28, 2013Publication date: October 31, 2013Inventors: Nobuyuki NAGAYAMA, Naoyuki SATOH, Keiichi NAGAKUBO, Kazuya NAGASEKI
-
Publication number: 20130255881Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.Type: ApplicationFiled: May 24, 2013Publication date: October 3, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Kouji MITSUHASHI, Hiroyuki NAKAYAMA, Nobuyuki NAGAYAMA, Tsuyoshi MORIYA, Hiroshi NAGAIKE
-
Patent number: 8545672Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.Type: GrantFiled: November 7, 2011Date of Patent: October 1, 2013Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Eiichiro Kikuchi
-
Patent number: 8475622Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.Type: GrantFiled: June 15, 2012Date of Patent: July 2, 2013Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Naoyuki Satoh, Keiichi Nagakubo, Kazuya Nagaseki
-
Patent number: 8449715Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.Type: GrantFiled: July 16, 2010Date of Patent: May 28, 2013Assignee: Tokyo Electron LimitedInventors: Kouji Mitsuhashi, Hiroyuki Nakayama, Nobuyuki Nagayama, Tsuyoshi Moriya, Hiroshi Nagaike
-
Patent number: 8349450Abstract: A thermal spray powder contains granulated and sintered particles composed of an oxide of any of the rare earth elements having an atomic number from 60 to 70. The average particle size of the primary particles constituting the granulated and sintered particles is 2 to 10 ?m. The crushing strength of the granulated and sintered particles is 7 to 50 MPa. A plasma resistant member includes a substrate and a thermal spray coating provided on the surface of the substrate. The thermal spray coating is formed by thermal spraying, preferably plasma thermal spraying, the thermal spray powder.Type: GrantFiled: October 31, 2007Date of Patent: January 8, 2013Assignee: Fujimi IncorporatedInventors: Hiroyuki Ibe, Isao Aoki, Junya Kitamura, Hiroaki Mizuno, Yoshiyuki Kobayashi, Nobuyuki Nagayama
-
Patent number: 8318034Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.Type: GrantFiled: July 9, 2010Date of Patent: November 27, 2012Assignee: Tokyo Electron LimitedInventors: Naoyuki Satoh, Nobuyuki Nagayama, Keiichi Nagakubo
-
Publication number: 20120258258Abstract: A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part.Type: ApplicationFiled: June 15, 2012Publication date: October 11, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki NAGAYAMA, Naoyuki SATOH, Keiichi NAGAKUBO, Kazuya NAGASEKI
-
Patent number: 8221579Abstract: In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.Type: GrantFiled: June 11, 2010Date of Patent: July 17, 2012Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Naoyuki Satoh, Keiichi Nagakubo, Kazuya Nagaseki
-
Publication number: 20120160808Abstract: A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.Type: ApplicationFiled: December 21, 2011Publication date: June 28, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Eiichiro KIKUCHI, Nobuyuki NAGAYAMA, Takahiro MIYAI
-
Publication number: 20120111500Abstract: The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.Type: ApplicationFiled: November 7, 2011Publication date: May 10, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki NAGAYAMA, Eiichiro KIKUCHI
-
Publication number: 20120073753Abstract: An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.Type: ApplicationFiled: September 26, 2011Publication date: March 29, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Naoyuki SATOH, Nobuyuki NAGAYAMA, Keiichi NAGAKUBO
-
Publication number: 20110083837Abstract: A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Ryo Nonaka, Nobuyuki Nagayama
-
Patent number: 7892361Abstract: An in-chamber member to use in the chamber of a plasma processing vessel has a coating film formed by a coating agent. The in-chamber member having deposits formed on the coating film is separated from the chamber and is immersed into a peeling solvent, e.g., acetone. Since the coating agent is made of a resist formed of a main component of, e.g., cyclized rubber-bisazide and a photosensitive component, the deposits can be separated from the in-chamber member together with the coating film being separated.Type: GrantFiled: April 2, 2008Date of Patent: February 22, 2011Assignee: Tokyo Electron LimitedInventors: Nobuyuki Nagayama, Kouji Mitsuhashi, Hiroyuki Nakayama
-
Publication number: 20110006037Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.Type: ApplicationFiled: July 9, 2010Publication date: January 13, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Naoyuki SATOH, Nobuyuki NAGAYAMA, Keiichi NAGAKUBO
-
Publication number: 20100314356Abstract: In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.Type: ApplicationFiled: June 11, 2010Publication date: December 16, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Nobuyuki NAGAYAMA, Naoyuki Satoh, Keiichi Nagakubo, Kazuya Nagaseki