Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O—X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The thermal spray material has an X-ray diffraction pattern that shows a main peak intensity IA corresponding to the rare earth element oxyhalide, a main peak intensity IB corresponding to a rare earth element oxide and a main peak intensity IC corresponding to a rare earth element halide, satisfying a relationship [(IB+IC)/IA]<0.02.

Abstract: A plasma processing apparatus includes a lower electrode 12 on which a wafer W is mounted. A second coolant path 70b is formed in a spiral shape in a region within the lower electrode 12 corresponding to a region where the wafer W is placed. Further, a first coolant path 70a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to a region where the second coolant path 70b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72a connected to the first coolant path 70a and a second pipeline 72b connected to the second coolant path 70b. A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72a, and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.

Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.

Abstract: A plasma processing apparatus includes a lower electrode 12 on which a wafer W is provided. A second coolant path 70b is formed in a spiral shape in a region within the lower electrode 12 corresponding to where the wafer W is placed. Further, a first coolant path 70a is formed in a spiral shape to be located in a lower region within the lower electrode 12 corresponding to where the second coolant path 70b is formed. A pipeline 72 connected to a chiller unit 71 is branched into a first pipeline 72a connected to the first coolant path 70a and a second pipeline 72b connected to the second coolant path 70b. A check valve 90 allowing a coolant to flow in one direction is provided on the first pipeline 72a, and a reversing unit 92 reversing a flow direction of the coolant is provided on the pipeline 72.

Abstract: Provided is a thermal spray material that can form a compact thermal sprayed coating having an enhanced plasma erosion resistance. The herein disclosed art provides a thermal spray material that contains a rare earth element (RE), oxygen (O), and a halogen element (X) as constituent elements and that contains a mixed crystal of a rare earth element oxyhalide (RE-O—X) and a rare earth element halide (REX3).

Abstract: A particle collecting apparatus includes a cylindrical housing, a gap forming unit, a supply port and an intake port. The cylindrical housing has a closed top and an open bottom facing a target object. The gap forming unit is configured to form a gap having a predetermined distance between the bottom and the target object. The supply port is formed at the opening of the bottom in an annular shape along an inner wall of the housing and configured to supply a gas to the target object. The intake port is provided closer to a central axis of the supply port than the supply port and configured to suck particles on the target object.

Abstract: An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Abstract: A manufacturing method for a component in a plasma processing apparatus is provided. The method includes: performing a surface conditioning on a surface of an underlying layer on which a film is to be formed by thermal spraying, the surface of the underlying layer includes a surface of a base or a surface of a layer formed on the surface of the base; and forming the film on the surface of the underlying layer by thermally spraying yttrium fluoride. A high velocity oxygen fuel spraying method or an atmospheric plasma spraying method is used in the forming of the film.

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating with greater plasma erosion resistance. The thermal spray material comprises at least 77% by mass rare earth element oxyhalide (RE-O-X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents.

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O—X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The rare earth element oxyhalide has a halogen to rare earth element molar ratio (X/RE) of 1.1 or greater.

Abstract: This invention provides a thermal spray material capable of forming a thermal spray coating excellent in plasma erosion resistance as well as in properties such as porosity and hardness. The thermal spray material comprises a rare earth element oxyhalide (RE-O-X) which comprises a rare earth element (RE), oxygen (O) and a halogen atom (X) as its elemental constituents. The thermal spray material has an X-ray diffraction pattern that shows a main peak intensity IA corresponding to the rare earth element oxyhalide, a main peak intensity IB corresponding to a rare earth element oxide and a main peak intensity IC corresponding to a rare earth element halide, satisfying a relationship [(IB+IC)/IA]<0.02.

Abstract: Particle generation can be suppressed from a thermally sprayed film of yttrium fluoride. A component exposed to plasma in a plasma processing apparatus is provided. The component includes a base and a film. The base is made of aluminum or an aluminum alloy, and an alumite film may be formed on a surface of the base. The film is formed by thermally spraying yttrium fluoride on a surface of the base or on a surface of an underlying layer including a layer provided on the base. A porosity of the film is 4% or less, and an arithmetic mean roughness of a surface of the film is 4.5 ?m or less.

Abstract: An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Abstract: An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Abstract: A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.

Abstract: A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body.

Abstract: A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.

Abstract: A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.