Abstract: A wheel load estimation device includes an obtaining unit obtaining angular velocities and angular accelerations of a rigid body including an element, accelerations of the rigid body in a front-rear direction and in a lateral direction, a weight of the element, and a position including a height of the element. The element fluctuates a center of gravity of the rigid body. A center-of-gravity inertia value calculation unit calculates information relevant to the center of gravity of the rigid body and an inertia value. A wheel load variation calculation unit calculates variation amounts of wheel loads that each act on a corresponding one of a plurality of wheels supporting the rigid body. A wheel load estimation unit estimates the wheel loads.

Abstract: A permanent magnet in which demagnetization adjustment can be easily performed and a method for manufacturing the same are provided. The permanent magnet contains 22 to 28 mass % of a rare-earth element R, 12 to 23 mass % of Fe, 3 to 9 mass % of Cu, 1 to 4 mass % of Zr, and a remainder consisting of Co and unavoidable impurities, in which, in a demagnetization curve in which the horizontal axis indicates a demagnetization field (kOe) and the vertical axis indicates the total amount of magnetic flux (×10?5 WbT) in the permanent magnet, the slope of an approximate straight line in demagnetization field ranges from 0 to ?11 kOe is 1.2 or smaller.

Abstract: A vehicle control device including a motion condition detector detecting motion conditions including a rotational motion and a longitudinal acceleration of a vehicle on which a load is to be loaded, a wheel load acquisition unit acquiring wheel loads of wheels, a loading state acquisition unit acquiring a loading state of the load loaded on the vehicle, an inertia value calculator calculating an inertia value including principal axes of inertia about a center of gravity of the vehicle with the load included, based on the acquired loading state, and a controller performing overturning prevention control that suppresses an increase in difference between the wheel loads of front and rear wheels of the vehicle, using the acquired wheel loads of the wheels, the inertia value, and detection values of the motion conditions.

Abstract: A positioning device or a speed measuring device includes: a satellite information acquisition portion that acquires satellite information including information related to a position of multiple satellites and information related to a distance between each of the multiple satellites and a mobile body or a relative speed with the multiple satellites; an attitude detection portion that detects an attitude of the mobile body; a relationship calculation portion that calculates a positional relationship or a speed relationship between an installation location of each of the multiple satellite antennas on the earth and a positioning target location; and a calculation portion that calculates a position of the positioning target location on the earth or a speed at the positioning target location.

Abstract: A sensor error correcting apparatus is provided with: a roll angle estimator configured to estimate a roll angle on the basis of a yaw rate of a moving body, a wheel speed, and lateral acceleration; a converter configured to convert the yaw rate to a horizontal yaw rate, on the basis of an estimated roll angle; and a zero point corrector configured to compare an azimuth change amount obtained by integrating the horizontal yaw rate in a turning period, which is from a start of turning of the moving body to an end of the turning, with an azimuth change amount of the velocity vector in the turning period, and configured to correct the measured lateral acceleration.

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

Abstract: A sensor error correcting apparatus is provided with: a roll angle estimator configured to estimate a roll angle on the basis of a yaw rate of a moving body, a wheel speed, and lateral acceleration; a converter configured to convert the yaw rate to a horizontal yaw rate, on the basis of an estimated roll angle; and a zero point corrector configured to compare an azimuth change amount obtained by integrating the horizontal yaw rate in a turning period, which is from a start of turning of the moving body to an end of the turning, with an azimuth change amount of the velocity vector in the turning period, and configured to correct the measured lateral acceleration.

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

Abstract: A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

Abstract: To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

Abstract: A method for evaluating a semiconductor film of a semiconductor device which is configured to include an insulating film, the semiconductor film, and a conductive film and to have a region where the semiconductor film and the conductive film overlap with each other with the insulating film provided therebetween, includes a step of performing plasma treatment after formation of the insulating film, and a step of calculating a peak value of resistivity of a microwave in the semiconductor film by a microwave photoconductive decay method after the plasma treatment, so that the hydrogen concentration in the semiconductor film is estimated.

Abstract: To provide a semiconductor device with improved reliability. To provide a semiconductor device with stable characteristics. To provide a transistor having a low off-state current. To provide a transistor having a high on-state current. To provide a novel semiconductor device, a novel electronic device, or the like. A method for manufacturing the semiconductor device includes the steps of forming a first semiconductor over a substrate; forming a second semiconductor over and in contact with the first semiconductor; forming a first layer over the second semiconductor; performing oxygen plasma treatment and then removing the first layer to expose at least part of a surface of the second semiconductor; forming a third semiconductor over and in contact with the second semiconductor; forming a first insulator over and in contact with the third semiconductor; and forming a first conductor over the first insulator.

Abstract: An image pickup device picks-up forward images, and a GPS information acquiring section acquires satellite information that includes Doppler frequencies. A position/velocity vector computing section computes a velocity vector by using the Doppler frequencies. A locus computing section computes a locus of positions of ones own vehicle. A projected image generating section generates, from the forward images, projected images that are projected onto a road surface. A local map generating section records road surface images, that are obtained for respective points on the locus of ones own vehicle, at respective regions of a local map that is determined on the basis of a traveling direction of a moving body at each point on the locus and a set position and a posture of the image pickup device. Due thereto, a local map generating device can, by a simple structure, generate a highly accurate map.

Abstract: A vehicle direction estimation section estimates an absolute direction of a heading direction of a vehicle based on GPS information and vehicle information. A satellite direction estimation section estimates an absolute direction of a target satellite of several satellites for positioning based on corresponding GPS information, and estimates a relative direction of the target satellite with respect to the heading direction based on the estimated absolute direction of the heading direction and the estimated absolute direction of the target satellite. A shield determination section determines a shielded state of the target satellite by determining whether a signal strength of a satellite signal from the target satellite is greater than a threshold value relative to a target partition of several partitions into which a three-dimensional sphere with respect to the heading direction is divided, the target partition which the calculated relative direction of the target satellite belongs to.

Abstract: An image pickup device picks-up forward images, and a GPS information acquiring section acquires satellite information that includes Doppler frequencies. A position/velocity vector computing section computes a velocity vector by using the Doppler frequencies. A locus computing section computes a locus of positions of ones own vehicle. A projected image generating section generates, from the forward images, projected images that are projected onto a road surface. A local map generating section records road surface images, that are obtained for respective points on the locus of ones own vehicle, at respective regions of a local map that is determined on the basis of a traveling direction of a moving body at each point on the locus and a set position and a posture of the image pickup device. Due thereto, a local map generating device can, by a simple structure, generate a highly accurate map.

Abstract: The present invention provides a position estimation apparatus, mounted at mobile object, including: an acquisition section that acquires transmission source information transmitted from each plural information transmission sources including, information relating to a position of information transmission source, information relating to a distance between information transmission source and mobile object, and information relating to a relative velocity of mobile object with respect to information transmission sources; a trajectory calculation section that calculates, over predetermined duration, a trajectory of mobile object by integrating velocity vectors of mobile object obtained based on transmission source information; and an estimation section that estimates, as a position of mobile object, a position for which trajectory is translated such that a difference between, distances between a plurality of points at different times on trajectory and respective information transmission sources, and acquired dista

Abstract: A positioning apparatus includes: a first positioning device for calculating a reception position of a GPS receiver with respect to each combination of satellites based on a pseudo distance from each positioning satellite to the reception position; a component error calculator for calculating an error of at least one component in a calculation result of the first positioning device; a pseudo distance error calculator for obtaining a relation equation between the error of the at least one component and an error of the pseudo distance, and for solving simultaneous equations comprising the relation equation so that the error of the pseudo distance with respect to each positioning satellite is calculated; and a second positioning device for correcting the reception position based on the error of the pseudo distance.